公开(公告)号：US08339736B2

公开(公告)日：2012-12-25

申请号：US11820703

申请日：2007-06-20

申请人： Kaizhong Gao ,  Sining Mao ,  Eric S. Linville ,  Xuebing Feng ,  Shaoping Li ,  Steven Paul Bozeman

发明人： Kaizhong Gao ,  Sining Mao ,  Eric S. Linville ,  Xuebing Feng ,  Shaoping Li ,  Steven Paul Bozeman

IPC分类号： G11B5/17

CPC分类号： G11B5/1278 ,  G11B5/02 ,  G11B5/3123 ,  G11B5/3133 ,  G11B2005/0002

摘要： A magnetic device includes a write element having a write element tip and a conductive coil that carries current to induce a first field in the write element. A first conductor is proximate a leading edge of the write pole tip for carrying current to generate a second field that augments the first field.

摘要翻译： 磁性装置包括具有写入元件尖端的写元件和承载电流以在写入元件中引起第一场的导电线圈。 第一导体靠近写极尖的前缘，用于承载电流以产生增大第一场的第二场。

公开(公告)号：US08325513B2

公开(公告)日：2012-12-04

申请号：US13349036

申请日：2012-01-12

申请人： Thomas William Clinton ,  Werner Scholz

发明人： Thomas William Clinton ,  Werner Scholz

IPC分类号： G11C11/00

CPC分类号： G11C19/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  Y10S977/935

摘要： A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

公开(公告)号：US08309945B2

公开(公告)日：2012-11-13

申请号：US13396731

申请日：2012-02-15

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

IPC分类号： H01L29/02

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

公开(公告)号：US08294228B2

公开(公告)日：2012-10-23

申请号：US13465182

申请日：2012-05-07

申请人： Xilin Peng ,  Konstantin Nikolaev ,  Taras Pokhil ,  Victor Sapazhnikov ,  Yonghua Chen

发明人： Xilin Peng ,  Konstantin Nikolaev ,  Taras Pokhil ,  Victor Sapazhnikov ,  Yonghua Chen

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/12

摘要： A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

公开(公告)号：US08293571B2

公开(公告)日：2012-10-23

申请号：US12915113

申请日：2010-10-29

申请人： Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang

发明人： Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang

IPC分类号： H01L21/06 ,  H01L21/16

CPC分类号： H01L45/146 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/1608 ,  H01L45/1675

摘要： A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.

摘要翻译： 包括有源电极的可编程金属化电池（PMC）; 设置在所述有源电极上的纳米多孔层，所述纳米多孔层包含多个纳米孔和电介质材料; 以及设置在纳米多孔层上的惰性电极。 其它实施方案包括由碘化银，碘化铜，硫化银，硫化铜，硒化银或硒化铜形成活性电极，并向活性电极施加正偏压，使活性电极引起银或铜迁移到纳米孔中。 还公开了形成方法。

公开(公告)号：US08288753B2

公开(公告)日：2012-10-16

申请号：US13278245

申请日：2011-10-21

申请人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

发明人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

IPC分类号： H01L47/02

CPC分类号： H01L45/085 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146

摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。

公开(公告)号：US08286333B2

公开(公告)日：2012-10-16

申请号：US12051332

申请日：2008-03-19

申请人： Nurul Amin ,  Ibro Tabakovic ,  Eric S. Linville ,  Ming Sun

发明人： Nurul Amin ,  Ibro Tabakovic ,  Eric S. Linville ,  Ming Sun

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3163 ,  G11B5/3133 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method of fabricating a recording head includes depositing an insulator material onto at least a portion of a first member, wherein the insulator material forms an insulator film having a film thickness. The method further includes depositing a writer pole material onto the insulator film, wherein the writer pole material forms a writer pole member, and wherein the insulator film is between the writer pole member and a contact layer. Further, in some embodiments, the film thickness determines the distance between the writer pole member and the first contact member and also determines the distance between the writer pole member and the second contact member.

摘要翻译： 制造记录头的方法包括将绝缘体材料沉积在第一构件的至少一部分上，其中绝缘体材料形成具有膜厚度的绝缘膜。 该方法还包括将写入极材料沉积到绝缘膜上，其中写极极材料形成写极极部件，并且其中绝缘膜位于写磁极部件和接触层之间。 此外，在一些实施例中，膜厚决定了写入器极构件和第一接触构件之间的距离，并且还确定了写入器极构件和第二接触构件之间的距离。

公开(公告)号：US08259540B1

公开(公告)日：2012-09-04

申请号：US13350943

申请日：2012-01-16

申请人： Sarbeswar Sahoo ,  Edwin Rejda ,  Ibro Tabakovic ,  Steven Carl Riemer ,  Michael Christopher Kautzky

发明人： Sarbeswar Sahoo ,  Edwin Rejda ,  Ibro Tabakovic ,  Steven Carl Riemer ,  Michael Christopher Kautzky

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

摘要： A magnetic device that includes a write pole having a write pole tip; a read pole having a read pole tip; an optical near field transducer; and a contact pad. The contact pad includes Ni100-aXa, wherein X is chosen from Ru, Re, Zr, Cr, and Cu; and a is the atomic percent of the element X, and can range from about 20 to about 90. The optical near field transducer is positioned between the read pole and the write pole and the contact pad is positioned adjacent the write pole opposite the optical near field transducer.

摘要翻译： 一种磁性装置，包括具有写极端的写极; 具有读极尖的读极; 光学近场传感器; 和接触垫。 接触垫包括Ni100-aXa，其中X选自Ru，Re，Zr，Cr和Cu; 并且a是元件X的原子百分比，并且可以在约20至约90的范围内。光学近场传感器位于读极和写极之间，并且接触垫位于与光学附近相反的写极上 场传感器。

公开(公告)号：US08233319B2

公开(公告)日：2012-07-31

申请号：US12175545

申请日：2008-07-18

申请人： Xiaohua Lou ,  Haiwen Xi

发明人： Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/14

CPC分类号： G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  Y10S977/933 ,  Y10S977/935

摘要： A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

摘要翻译： 存储单元包括电耦合到位线和字线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使单极电压跨过磁隧道结数据单元而在高电阻状态和低电阻状态之间切换。 二极管电耦合在磁性隧道结数据单元和字线或位线之间。 电压源提供写入高电阻状态和低电阻状态的磁性隧道结数据单元两端的单极电压。

公开(公告)号：US08223560B2

公开(公告)日：2012-07-17

申请号：US13096003

申请日：2011-04-28

申请人： Insik Jin ,  Yang Li ,  Hongyue Liu ,  Song S. Xue

发明人： Insik Jin ,  Yang Li ,  Hongyue Liu ,  Song S. Xue

IPC分类号： G11C16/04

CPC分类号： H01L29/7881 ,  G11C11/14 ,  G11C16/0408 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/82

摘要： An apparatus includes at least one memory device including a floating gate element and a magnetic field generator that operably applies a magnetic field to the memory device. The magnetic field directs electrons in the memory device into the floating gate element.

摘要翻译： 一种装置包括至少一个存储器件，其包括可操作地将磁场施加到存储器件的浮动栅极元件和磁场发生器。 磁场将存储器件中的电子引导到浮动栅极元件中。