Invention Grant
- Patent Title: Magnetic floating gate memory
- Patent Title (中): 磁浮栅存储器
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Application No.: US13096003Application Date: 2011-04-28
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Publication No.: US08223560B2Publication Date: 2012-07-17
- Inventor: Insik Jin , Yang Li , Hongyue Liu , Song S. Xue
- Applicant: Insik Jin , Yang Li , Hongyue Liu , Song S. Xue
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt, PA
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
An apparatus includes at least one memory device including a floating gate element and a magnetic field generator that operably applies a magnetic field to the memory device. The magnetic field directs electrons in the memory device into the floating gate element.
Public/Granted literature
- US20110199832A1 MAGNETIC FLOATING GATE MEMORY Public/Granted day:2011-08-18
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