Abstract:
Components in an ion implanter that may see incidence of the ion beam include a chamber having an elongate slot opening defined by edges so that a central portion of the ion beam enters the component through the opening with the edges clipping at least a peripheral portion of the ion beam. The arrangement mitigates the problem of sputtered material escaping back out from the component and becoming entrained in the ion beam.
Abstract:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.
Abstract:
An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and a third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.
Abstract:
An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.
Abstract:
Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
Abstract:
A monochromator (1) for a charged particle optics, in particular, for electron microscopy, comprises at least one first deflection element (2, 3) with an electrostatic deflecting field (2′, 3′) for generating a dispersion (4) in the plane (5) of a selection aperture (6) to select charged particles of a desired energy interval (7) and at least one second deflection element (8, 9) with an electrostatic deflecting field (8′, 9′) which eliminates the dispersion (4) of the at least one first deflecting field (2′, 3′). A radiation source (17) comprises such a monochromator (1). High monchromatism without intensity contrasts caused by defects of the slit aperture is thereby achieved in that the deflection elements (2, 3, 8, 9) have a design other than spherically shaped and their electrodes (24, 25) are given a potential (φ+, φ−) such that the charged particles (xα, yβ) which virtually enter the image of the radiation source (17) at different respective angles (α, β) in different sections (x, y), are differently focused such that charged particles (xα, yβ) of one energy are point focused (10, 10′, 10″) exclusively in the plane (5) of the selection aperture (6), since zero-crossings (11, 12) of the deflections (A) of the charged particles (xα, yβ) of the different sections (x, y) only coincide there at the same axial position (z, E).
Abstract:
Aspects of the present invention are directed generally toward atom probe and three-dimensional atom probe microscopes. For example, certain aspects of the invention are directed-toward an atom probe or a three-dimensional atom probe that includes a sub-nanosecond laser to evaporate ions from a specimen under analysis and a reflectron for reflecting the ions. In further aspects of the invention, the reflectron can include a front electrode and a back electrode. At least one of the front and back electrodes can be capable of generating a curved electric field. Additionally, the front electrode and back electrodes can be configured to perform time focusing and resolve an image of a specimen.
Abstract:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.
Abstract:
The present invention provides an electron spectroscopy apparatus (12) comprising a high energy particle source (12) for irradiating a sample, an electron detector system (16) (e.g. including a delay line detector) for detecting electrons emitted from the sample and an ion gun (8) for delivering a polycyclic aromatic hydrocarbon (PAH) ion beam to the sample, wherein the ion gun comprises a polycyclic aromatic hydrocarbon ion source, for example comprising coronene. In an embodiment, the PAH is located in a heated chamber (22) and vaporised to produce gas phase PAH. The gas phase PAH molecules are then ionised by electron impact, extracted from the ion source via an extraction field and focussed using ion optics. The PAH ion beam can be used for surface cleaning and depth analysis.