公开(公告)号：US20180149981A1

公开(公告)日：2018-05-31

申请号：US15578312

申请日：2016-06-27

Applicant: ASML Netherlands B.V.

Inventor： Paul Cornelis Hubertus ABEN ,  Sanjaysingh LALBAHADOERSING ,  Jurgen Johnnes Henderikus Maria SCHOONUS

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70516 ,  G03F7/70466 ,  G03F7/70633 ,  G03F7/70683 ,  G03F7/707 ,  G03F9/7019 ,  G03F9/708

Abstract: A method including: providing a reference substrate with a first mark pattern; providing the reference substrate with a first resist layer on the reference substrate, wherein the first resist layer has a minimal radiation dose needed for development of the first resist; using a reference patterning device to impart a radiation beam with a second mark pattern in its cross-section to form a patterned radiation beam; and exposing a target portion of the first resist layer of the reference substrate n times to said patterned radiation beam to create exposed areas in the target portion of the first resist layer in accordance with the second mark pattern that have been subjected to an accumulated radiation dose above the minimal radiation dose of the first resist layer, wherein n is an integer with a value of at least two.

公开(公告)号：US20180095371A1

公开(公告)日：2018-04-05

申请号：US15509484

申请日：2016-06-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lei Zhang ,  Wukun Dai ,  Lei Chen ,  Jiapeng Li ,  Yiping Dong

IPC: G03F9/00 ,  G03F7/20 ,  H05K3/00 ,  H05K1/02 ,  H01L21/68

CPC classification number: G03F9/7038 ,  G02F1/1303 ,  G03F7/20 ,  G03F7/70466 ,  G03F9/7069 ,  G03F9/7076 ,  G03F9/7088 ,  H01L21/681 ,  H01L27/1214 ,  H05K1/0269 ,  H05K3/0008

Abstract: An overlay alignment detection apparatus for a display device and an exposure process system are provided by embodiments of the present disclosure, the overlay alignment detection apparatus including a bearing frame for bearing the display device, a control device, a detection device and an analysis device. The control device is configured to send control commands to the detection device depending on pre-stored coordinate information of a reference point within an overlay area of the display device when the bearing frame is at an idle time among processes; the detection device is configured to be moved to the overlay area of the display device on the bearing frame according to the control commands sent by the control device, to acquire images of the overlay area, and to send the acquired images to the analysis device; and the analysis device is configured to analyze and process an overlay alignment condition of the display device, with the images sent by the detection device. The overlay alignment detection apparatus provided by the present disclosure may determine the overlay alignment condition of the display device without measuring critical dimensions of the display device; therefore, detection efficiency may be enhanced, such that a comprehensive detection may be implemented on all display devices to be detected and product quality thereof may also be improved.

公开(公告)号：US09885956B2

公开(公告)日：2018-02-06

申请号：US14606161

申请日：2015-01-27

Applicant: FUJIFILM Corporation

Inventor： Tsukasa Yamanaka ,  Naoya Iguchi ,  Ryosuke Ueba ,  Kei Yamamoto

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/00 ,  G03F7/039 ,  G03F7/11 ,  G03F7/32

CPC classification number: G03F7/2022 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/70466

Abstract: A pattern forming method includes: (a) forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition (I) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (b) exposing the first film; (c) developing the exposed first film using a developer containing an organic solvent to form a first negative pattern; (e) forming a second film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition (II) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (f) exposing the second film; and (g) developing the exposed second film using a developer containing an organic solvent to form a second negative pattern in this order.

公开(公告)号：US20180031978A1

公开(公告)日：2018-02-01

申请号：US15464951

申请日：2017-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-min Park ,  Myung-soo Hwang ,  Ji-sun Lee

IPC: G03F7/20

CPC classification number: G03F7/70033 ,  G03F7/7005 ,  G03F7/7045 ,  G03F7/70466 ,  G03F7/70558

Abstract: An extreme ultraviolet (EUV) exposure system capable of improving the yield of an EUV exposure process by improving EUV exposure performance, and furthermore, capable of increasing throughput or productivity of the EUV exposure process, the EUV exposure system including an EUV exposure apparatus configured to perform EUV exposure on a wafer disposed on a chuck table, a load-lock chamber combined with the EUV exposure apparatus and configured to supply and discharge the wafer to/from the EUV exposure apparatus, and an ultraviolet (UV) exposure apparatus configured to perform UV exposure by irradiating an entire upper surface of the wafer with a UV light without using a mask.

公开(公告)号：US20170330806A1

公开(公告)日：2017-11-16

申请号：US15594187

申请日：2017-05-12

Applicant: Tokyo Electron Limited

Inventor： Anton J. deVilliers ,  Michael A. Carcasi

IPC: H01L21/66 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L22/20 ,  G03F7/0035 ,  G03F7/2051 ,  G03F7/2053 ,  G03F7/405 ,  G03F7/70466 ,  G03F7/70558 ,  H01L21/0274 ,  H01L21/31144

Abstract: A method for critical dimension control in which a substrate is received having an underlying layer and a patterned layer formed on the underlying layer, the patterned layer including radiation-sensitive material and a pattern of varying elevation with a first critical dimension. The method further includes applying an overcoat layer over the patterned layer, the overcoat layer containing a photo agent selected from a photosensitizer generator compound, a photosensitizer compound, a photoacid generator compound, a photoactive agent, an acid-containing compound, or a combination of two or more thereof. The overcoat layer is then exposed to electromagnetic radiation, wherein the dose of electromagnetic radiation applied to different regions of the substrate is varied, and then the overcoat layer and patterned layer are heated. The method further includes developing the overcoat layer and the patterned layer to alter the first critical dimension of the patterned layer to a second critical dimension.

公开(公告)号：US09798248B2

公开(公告)日：2017-10-24

申请号：US14801427

申请日：2015-07-16

Applicant: Nanoscribe GmbH

Inventor： Joerg Hoffmann ,  Philipp Simon ,  Michael Thiel ,  Martin Hermatschweiler ,  Holger Fischer

IPC: G03F7/20 ,  G03F7/32

CPC classification number: G03F7/70433 ,  G03F7/20 ,  G03F7/32 ,  G03F7/70466

Abstract: The invention relates to a method for producing a structure in a lithographic material, wherein the structure in the lithographic material is defined by means of a writing beam of an exposure device, in that a plurality of partial structures are written sequentially, wherein for writing the partial structures a write field of the exposure device is displaced and positioned sequentially and that a partial structure is written in the write field in each case, and wherein for positioning of the write field a reference structure is detected by means of an imaging measuring device. For calibration of the write field in the respectively positioned write field, before, during or after writing a partial structure, at least one reference structure element assigned to this partial structure is produced in the lithographic material with the writing beam, wherein the reference structure element after the displacement of the write field is detected by means of the imaging measuring device for writing a further partial structure.

公开(公告)号：US09733562B2

公开(公告)日：2017-08-15

申请号：US14923243

申请日：2015-10-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yen-Cheng Lu ,  Jeng-Horng Chen ,  Shinn-Sheng Yu ,  Anthony Yen

IPC: G03F1/24 ,  G03F1/22 ,  G03F7/20 ,  G03F1/48 ,  G03F1/52

CPC classification number: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F7/2002 ,  G03F7/2022 ,  G03F7/70466 ,  G03F7/70625 ,  G03F7/70941

Abstract: An apparatus comprises a low EUV reflectivity (LEUVR) mask. The LEUVR mask includes a low thermal expansion material (LTEM) layer; a reflective multilayer (ML) over the LTEM layer; and a patterned absorption layer over the reflective ML. The reflective ML has less than 2% EUV reflectivity.

公开(公告)号：US09703211B2

公开(公告)日：2017-07-11

申请号：US14885657

申请日：2015-10-16

Applicant: University of Utah Research Foundation

Inventor： Rajesh Menon

IPC: G03F7/20

CPC classification number: G03F7/70425 ,  G03F7/70325 ,  G03F7/70466

Abstract: A method for sub-diffraction-limited patterning using a photoswitchable layer is disclosed. A sample of the photoswitchable layer can be selectively exposed to a first wavelength of illumination that includes a super-oscillatory peak. The sample can be selectively exposed to a second wavelength of illumination that does not include the super-oscillatory peak. A region in the sample that corresponds to the super-oscillatory peak and is associated with the second transition state can optionally be converted into a third transition state. The region in the sample at the third transition state can constitute a pattern of an isolated feature with a size that is substantially smaller than a far-field diffraction limit.

公开(公告)号：US09691868B2

公开(公告)日：2017-06-27

申请号：US14283168

申请日：2014-05-20

Applicant: QUALCOMM Incorporated

Inventor： Stanley Seungchul Song ,  Zhongze Wang ,  Choh Fei Yeap

IPC: H01L29/423 ,  G03F7/20 ,  H01L21/8234 ,  H01L27/02 ,  H01L21/28 ,  H01L27/088

CPC classification number: H01L29/4238 ,  G03F7/70466 ,  H01L21/28123 ,  H01L21/823437 ,  H01L27/0207 ,  H01L27/0886

Abstract: Methods for fabricating devices on a die, and devices on a die. A method may include patterning a first region to create a first gate having a first gate length and a first contacted polysilicon pitch (CPP) with a first process. The first CPP is smaller than a single pattern lithographic limit. The method also includes patterning the first region to create a second gate having a second gate length or a second CPP with a second process. The second CPP is smaller than the single pattern lithographic limit. The second gate length is different than the first gate length.

公开(公告)号：US09650538B2

公开(公告)日：2017-05-16

申请号：US14305767

申请日：2014-06-16

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hideto Kato ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

IPC: G03F7/023 ,  C09D163/04 ,  G03F7/022 ,  B81C1/00 ,  G03F7/40 ,  G03F7/30 ,  G03F7/20

CPC classification number: C09D163/04 ,  B81C1/00619 ,  B81C2201/0108 ,  G03F7/0226 ,  G03F7/0236 ,  G03F7/30 ,  G03F7/40 ,  G03F7/70466

Abstract: A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.