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公开(公告)号：US11294282B2
公开(公告)日：2022-04-05
申请号：US16114474
申请日：2018-08-28
发明人： Kumiko Hayashi , Hitoshi Maruyama , Kazunori Kondo , Hideto Kato
IPC分类号： G03F7/075 , C08L61/28 , G03F7/039 , C08L63/00 , C08L83/04 , C08G77/52 , C08G59/30 , G03F7/038 , C09D183/14 , C08K5/00 , H01L21/47
摘要： A photosensitive resin composition comprising an isocyanurate-modified silicone resin containing an epoxy group in the molecule is easy to form a resin coating which has high transparency, light resistance and heat resistance, is amenable to micro-processing, and is useful in applications for protecting and encapsulating optical devices. The coating can be processed in thick film form to define a pattern having a fine size and perpendicularity, and becomes a cured coating which has improved adhesion to substrates, electronic parts, semiconductor devices, and supports for circuit boards, mechanical properties, electric insulation, and crack resistance, and is reliable as an insulating protective film.
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2.发明授权公开(公告)号：US10658314B2
公开(公告)日：2020-05-19
申请号：US15728846
申请日：2017-10-10
发明人： Hiroyuki Yasuda , Michihiro Sugo , Hideto Kato
IPC分类号： B32B7/06 , H01L21/683 , C08G77/50 , B32B15/08 , B32B17/06 , C08G77/52 , B32B7/12 , H01L23/00 , B32B27/26 , B32B27/28 , B32B38/10 , B32B27/20 , B32B27/18 , B32B27/24 , B32B37/12 , C09J163/00 , B32B27/08 , C09J183/10 , B32B37/02 , C08G77/00 , B32B38/00 , B32B37/00
摘要： Disclosed herein is a wafer laminate suitable for production of thin wafers and a method for producing the wafer laminate. The wafer laminate can be formed easily by bonding between the support and the wafer and it can be easily separated from each other. It promotes the productivity of thin wafers.The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer which is laminated on the adhesive layer in such a way that that surface of the wafer which has the circuit surface faces toward the adhesive layer, wherein the adhesive layer is a cured product of an adhesive composition composed of resin A and resin B, the resin A having the light blocking effect and the resin B having the siloxane skeleton.
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公开(公告)号：US20190352465A1
公开(公告)日：2019-11-21
申请号：US16414281
申请日：2019-05-16
发明人： Hitoshi Maruyama , Hideto Kato , Michihiro Sugo
IPC分类号： C08G77/52 , G03F7/075 , C08G65/336
摘要： A novel polymer containing silphenylene and polyether structures in the backbone is used to formulate a photosensitive composition having improved reliability.
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公开(公告)号：US20180107116A1
公开(公告)日：2018-04-19
申请号：US15783397
申请日：2017-10-13
发明人： Satoshi Asai , Kyoko Soga , Hideto Kato
CPC分类号： G03F7/0757 , C08G77/38 , C09D133/08 , C09D133/24 , C09D163/00 , C09D167/00 , C09D175/04 , C09D183/04 , G03F7/0382 , G03F7/11 , G03F7/161 , G03F7/2002
摘要： To provide a laminate which enables pattern formation with excellent opening shape even in the case where a chemically amplified negative type resist material is used, and a pattern forming method in which the laminate is used.The laminate includes a chemically amplified negative type resist layer, and a basic resin coat layer thereon that contains 0.001 to 10% by weight of a basic compound having a molecular weight of up to 10,000.
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5.发明申请TEMPORARY BONDING ADHESIVE COMPOSITIONS AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 有权临时粘结粘合剂组合物和使用其制造半导体器件的方法公开(公告)号：US20150024574A1
公开(公告)日：2015-01-22
申请号：US14334265
申请日：2014-07-17
发明人： Tae-Hoon Kim , Hideto Kato , Jae-Hyun Kim , Jun-Won Han , Hiroyuki Yasuda , Shohei Tagami , Michihiro Sugo , Jung-Sik Choi
IPC分类号： H01L21/762 , C09J183/06 , C09J183/04
CPC分类号： C09J183/06 , B05D3/02 , B32B27/283 , C08G77/52 , C08G77/70 , C08L83/00 , C09J183/04 , C09J183/14 , H01L21/6835 , H01L25/0652 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/16225 , H01L2225/06513 , H01L2924/15311
摘要： A temporary bonding adhesive composition includes a first compound including a thermosetting polyorganosiloxane and a second compound including a thermoplastic polyorganosiloxane.
摘要翻译： 临时粘合剂组合物包括包含热固性聚有机硅氧烷的第一化合物和包含热塑性聚有机硅氧烷的第二化合物。
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6.发明申请SILPHENYLENE-CONTAINING PHOTOCURABLE COMPOSITION, PATTERN FORMATION METHOD USING SAME, AND OPTICAL SEMICONDUCTOR ELEMENT OBTAINED USING THE METHOD 有权含有苯甲烯的光致抗蚀剂组合物，使用其的图案形成方法和使用该方法获得的光学半导体元件公开(公告)号：US20140011126A1
公开(公告)日：2014-01-09
申请号：US14019910
申请日：2013-09-06
发明人： Shohei Tagami , Takato Sakurai , Hideto Kato
IPC分类号： G03F7/00
CPC分类号： G03F7/0005 , C08G59/306 , C08L63/00 , C08L2312/06 , G03F7/0755 , Y10T428/24802 , C08L83/04
摘要： Provided is a silphenylene-containing photocurable composition including: (A) a specific silphenylene having both terminals modified with alicyclic epoxy groups, and (C) a photoacid generator that generates acid upon irradiation with light having a wavelength of 240 to 500 nm. Also provided is a pattern formation method including: (i) forming a film of the photocurable composition on a substrate, (ii) exposing the film through a photomask with light having a wavelength of 240 to 500 nm, and if necessary, performing heating following the exposure, and (iii) developing the film in a developing liquid, and if necessary, performing post-curing at a temperature within a range from 120 to 300° C. following the developing. Further provided is an optical semiconductor element obtained by performing pattern formation using the method. The composition is capable of very fine pattern formation across a broad range of wavelengths, and following pattern formation, yields a film that exhibits a high degree of transparency and superior light resistance. The composition may also include: (B) a specific epoxy group-containing organosilicon compound.
摘要翻译： 本发明提供一种含有亚苯基苯的光固化性组合物，其含有：（A）具有两个末端被脂环族环氧基改性的特定的硅亚苯基，（C）光照酸产生剂，其在波长240〜500nm的光照射下产生酸。 还提供了一种图案形成方法，包括：（i）在基板上形成光固化性组合物的膜，（ii）用波长为240〜500nm的光使膜通过光掩模曝光，如果需要，进行加热 曝光，和（iii）在显影液中显影该膜，如有必要，在显影后在120-300℃的温度下进行后固化。 还提供了通过使用该方法进行图案形成而获得的光学半导体元件。 组合物能够在宽波长范围内形成非常精细的图案，并且在图案形成之后，产生显示出高透明度和优异耐光性的膜。 组合物还可以包括：（B）特定的含环氧基的有机硅化合物。
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公开(公告)号：US11262655B2
公开(公告)日：2022-03-01
申请号：US16411472
申请日：2019-05-14
发明人： Hitoshi Maruyama , Hideto Kato , Michihiro Sugo
IPC分类号： C08G77/60 , G03F7/075 , G03F7/004 , G03F7/038 , G03F7/40 , H01L23/00 , C08G77/00 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38
摘要： A photosensitive resin composition comprising (A) a silphenylene and polyether structure—containing polymer and (B) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved substrate adhesion, a pattern forming ability, crack resistance, and reliability as protective film.
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公开(公告)号：US10453732B2
公开(公告)日：2019-10-22
申请号：US15360418
申请日：2016-11-23
发明人： Hiroyuki Yasuda , Michihiro Sugo , Hideto Kato
IPC分类号： H01L21/683 , H01L21/304 , H01L23/00 , C09J165/00 , C09J183/14 , C09D5/32 , C09D165/00 , C09D183/14 , C09J5/00 , C08G77/52 , C08K5/00 , C08L63/00
摘要： A wafer laminate has an adhesive layer (3) sandwiched between a transparent substrate (1) and a water (2), with a circuit-forming surface of the wafer facing the adhesive layer. The adhesive layer (3) includes a first cured resin layer (3a) disposed adjacent the substrate and having light-shielding properties and a second cured resin layer (3b) disposed adjacent the wafer and comprising a cured product of a thermosetting resin composition.
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公开(公告)号：US10319653B2
公开(公告)日：2019-06-11
申请号：US15126172
申请日：2015-03-12
发明人： Katsuya Takemura , Kyoko Soga , Satoshi Asai , Kazunori Kondo , Michihiro Sugo , Hideto Kato
IPC分类号： B23K1/00 , C25D3/60 , C25D5/02 , C25D5/48 , C25D5/50 , C25D5/54 , C25D7/00 , C25D7/12 , H05K3/34 , B29C70/78 , B29C70/88 , B29K63/00 , B29K83/00 , B29L31/34 , C23C14/04 , C23C14/34 , C23C14/58 , H01L21/02 , H01L21/48 , H01L21/56 , H01L23/12 , H01L23/498 , H01L23/538 , H01L23/00 , H01L25/03 , H01L25/10 , H01L25/00 , H01L23/31 , H01L25/065 , B29K105/20
摘要： A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.
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公开(公告)号：US10297485B2
公开(公告)日：2019-05-21
申请号：US15928305
申请日：2018-03-22
发明人： Hiroyuki Yasuda , Michihiro Sugo , Hideto Kato , Kazunori Kondo
IPC分类号： H01L23/48 , H01L21/683 , H01L23/00 , H01L23/31 , C09J161/06 , H01L21/56
摘要： A semiconductor device is provided comprising a support, an adhesive resin layer, an insulating layer, a redistribution layer, a chip layer, and a mold resin layer. The adhesive resin layer consists of a resin layer (A) comprising a photo-decomposable resin containing a fused ring in its main chain and a resin layer (B) comprising a non-silicone base thermoplastic resin and having a storage elastic modulus E′ of 1-500 MPa at 25° C. and a tensile break strength of 5-50 MPa. The semiconductor device is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.
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