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公开(公告)号：US12195568B2
公开(公告)日：2025-01-14
申请号：US17674136
申请日：2022-02-17
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Masashi Iio , Hiroyuki Urano , Osamu Watanabe , Katsuya Takemura
Abstract: A positive photosensitive resin composition including: an alkali-soluble resin containing at least one structure selected from a polyimide structure, a polyamide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof, a polymer compound having a structural unit formed by cyclopolymerization, and a compound having a quinonediazide structure for serving as a photosensitizer to generate an acid by light and increase a dissolution speed to an alkaline aqueous solution.
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公开(公告)号：US12085856B2
公开(公告)日：2024-09-10
申请号：US17389866
申请日：2021-07-30
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Masashi Iio , Hiroyuki Urano , Osamu Watanabe , Katsuya Takemura
CPC classification number: G03F7/0397 , G03F1/48 , G03F7/0045 , G03F7/075 , G03F7/11 , G03F7/161 , G03F7/2004 , G03F7/322
Abstract: A positive photosensitive resin composition including: (A) an alkali-soluble resin containing at least one or more structures selected from a polyimide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof; (B) a crosslinkable polymer compound containing a structural unit represented by the following general formula (1) and having a group crosslinked with the component (A); and (C) a compound having a quinonediazide structure for serving as a photosensitizer to generate an acid by light and increase a dissolution speed to an alkaline aqueous solution, the resin composition and a positive photosensitive dry film derived therefrom that enable formation of a fine pattern and high resolution, have excellent mechanical characteristics even when cured at low temperatures, and have no degradation in adhesive force between before and after a high temperature and high humidity test.
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公开(公告)号：US11892773B2
公开(公告)日：2024-02-06
申请号：US17469454
申请日：2021-09-08
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Hiroyuki Urano , Masashi Iio , Katsuya Takemura
CPC classification number: G03F7/0757 , G03F7/0045 , G03F7/16 , G03F7/38 , G03F7/40
Abstract: A photosensitive resin composition, a patterning process performed using the photosensitive resin composition, a cured film formed by curing the pattern, and an electronic component having the cured film. The photosensitive resin composition includes a resin, a photosensitizer, a surfactant containing a structural unit represented by formula (1), and a solvent, where Y1 and Y2 each independently represent a hydrogen atom, a methyl group, a phenyl group, or a group represented by formula (2), at least one of Y1 and Y2 is a group represented by formula (2), R1 to R6 are monovalent hydrocarbon groups that may be the same or different and optionally contain a heteroatom, having 1 to 20 carbon atoms, “1” and “n” are each independently integers of 1 to 100, and “m” is an integer of 0 to 100.
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公开(公告)号：US11333975B2
公开(公告)日：2022-05-17
申请号：US16848589
申请日：2020-04-14
Inventor： Dmitry Zubarev , Hiroyuki Urano , Katsuya Takemura , Masashi Iio , Kazuya Honda , Yoshio Kawai
IPC: G03F7/023 , C08G73/10 , C08G73/14 , C08G73/22 , G03F7/022 , G03F7/038 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/40
Abstract: Provided is a polymer that can be used as a base resin for a positive photosensitive resin composition and a negative photosensitive resin composition, wherein the positive photosensitive resin composition and the negative photosensitive resin composition are soluble in an aqueous alkaline solution, can form a fine pattern, can achieve high resolution, and have good mechanical properties even when they are cured at low temperature. Also provided are a positive photosensitive resin composition and a negative photosensitive resin composition using the polymer. The polymer is represented by general formulas (1) and/or (2): wherein T1 and T2 may be the same as, or different from, each other and represent any of —CO— and —SO2—; X1 is a tetravalent organic group; and l is 0 or 1; and X2 is a divalent organic group.
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公开(公告)号：US10319653B2
公开(公告)日：2019-06-11
申请号：US15126172
申请日：2015-03-12
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Katsuya Takemura , Kyoko Soga , Satoshi Asai , Kazunori Kondo , Michihiro Sugo , Hideto Kato
IPC: B23K1/00 , C25D3/60 , C25D5/02 , C25D5/48 , C25D5/50 , C25D5/54 , C25D7/00 , C25D7/12 , H05K3/34 , B29C70/78 , B29C70/88 , B29K63/00 , B29K83/00 , B29L31/34 , C23C14/04 , C23C14/34 , C23C14/58 , H01L21/02 , H01L21/48 , H01L21/56 , H01L23/12 , H01L23/498 , H01L23/538 , H01L23/00 , H01L25/03 , H01L25/10 , H01L25/00 , H01L23/31 , H01L25/065 , B29K105/20
Abstract: A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.
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Patent Agency Ranking
6.发明授权Silicone structure-bearing polymer, negative resist composition, photo-curable dry film, patterning process, and electric/electronic part-protecting film 有权含有硅氧烷结构的聚合物，负性抗蚀剂组合物，光固化型干膜，图案化工艺以及电子/电子部件保护膜公开(公告)号：US09377689B2
公开(公告)日：2016-06-28
申请号：US14807072
申请日：2015-07-23
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Katsuya Takemura , Hiroyuki Urano , Masashi Iio , Takayuki Fujiwara , Koji Hasegawa
IPC: G03F7/075 , C08G77/52 , G03F7/40 , G03F7/38 , C07C39/21 , C09D183/14 , C08L83/14 , H01L21/312 , C08G77/12 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/038 , G03F7/09 , G03F7/11
CPC classification number: G03F7/0757 , C07C39/21 , C08G77/12 , C08G77/52 , C08L83/14 , C09D183/14 , G03F7/038 , G03F7/0382 , G03F7/09 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/2037 , G03F7/32 , G03F7/38 , G03F7/40 , H01L21/312 , H01L21/321
Abstract: A silicone structure-bearing polymer comprising recurring units derived from a bis(4-hydroxy-3-allylphenyl) derivative and having a Mw of 3,000-500,000 is provided. A chemically amplified negative resist composition comprising the polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.
Abstract translation: 提供了含有衍生自双（4-羟基-3-烯丙基苯基）衍生物并具有3,000-500,000的Mw的重复单元的含硅结构的聚合物。 包含该聚合物的化学放大型负性抗蚀剂组合物克服了从Cu或Al，电极和SiN衬底的金属布线剥离涂层的剥离问题。
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7.发明授权Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film 有权化学放大的负性抗蚀剂组合物，光固化型干膜，制造方法，图案形成工艺以及电子/电子部件保护膜公开(公告)号：US09158191B2
公开(公告)日：2015-10-13
申请号：US13705387
申请日：2012-12-05
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Katsuya Takemura , Takeru Watanabe , Takashi Miyazaki
IPC: G03F7/038 , G03C1/805 , B32B3/26 , G03F7/20 , G03F7/40 , G03F7/11 , G03F7/38 , G03F7/004 , G03F7/075 , G03C1/76
CPC classification number: G03C1/805 , B32B3/266 , G03C2001/7635 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/0382 , G03F7/0757 , G03F7/11 , G03F7/20 , G03F7/38 , G03F7/40 , Y10T428/24331 , Y10T428/24612
Abstract: A chemically amplified negative resist composition is provided comprising (A) a resin having a crosslinking group, (B) a crosslinker, (C) a photoacid generator capable of generating an acid upon exposure to light of wavelength 190-500 nm, (D) a solvent, and (E) a fluoroalkyl-containing amine compound. The resist composition can form a fine pattern, specifically a fine hole or space pattern which has a positive taper (or forward taper) profile in which the size of top is greater than the size of bottom or improves the overhang profile with extremely projected top.
Abstract translation: （A）具有交联基团的树脂，（B）交联剂，（C）能够在暴露于波长190-500nm的光下产生酸的光酸产生剂，（D） 溶剂和（E）含氟烷基的胺化合物。 抗蚀剂组合物可以形成精细图案，特别是具有正锥度（或向前锥形）轮廓的细孔或空间图案，其中顶部的尺寸大于底部的尺寸，或者改善具有极高的顶部的悬垂型材。
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公开(公告)号：US11572442B2
公开(公告)日：2023-02-07
申请号：US16848439
申请日：2020-04-14
Inventor： Dmitry Zubarev , Hiroyuki Urano , Katsuya Takemura , Masashi Iio , Kazuya Honda , Yoshio Kawai
IPC: C08G73/14 , G03F7/023 , G03F7/038 , G03F7/38 , G03F7/40 , C07C63/49 , C07C211/49 , C07C233/65 , G03F7/022 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/32
Abstract: Provided is a compound that can be used as a base resin for a photosensitive resin composition. The photosensitive resin can form a fine pattern and can achieve high resolution without impairing mechanical strength and solubility. The compound is represented by the general formula (1): wherein Z represents a linear, branched or cyclic divalent hydrocarbon group having 2 to 30 carbon atoms; X1 to X3 represent any of —CO2—, —CONRX1—, —O—, —NRX1—, —S—, —SO2—, —SO3— and —SO2NRX1— and may be the same as or different from each other, provided that RX1 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 30 carbon atoms; Ar represents a divalent aromatic group having 2 to 30 carbon atoms; L1 and L2 independently represent a divalent hydrocarbon group having 1 to 30 carbon atoms; and x and y are each independently 0 or 1.
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公开(公告)号：US11150556B2
公开(公告)日：2021-10-19
申请号：US15918261
申请日：2018-03-12
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Katsuya Takemura , Hiroyuki Urano , Masashi Iio
IPC: G03F7/004 , G03F7/023 , G03F7/039 , G03F7/038 , G03F7/30 , C08G73/12 , C08G73/10 , C08G73/14 , G03F7/40 , G03F7/32 , G03F7/20 , C09D179/08 , G03F7/38
Abstract: This is to provide a polymer of a polyimide precursor which is soluble in an aqueous alkaline solution, and capable of using a base resin of a positive type and negative type photosensitive resin composition which is capable of forming a fine pattern and obtaining high resolution. Also provided is a positive type and negative type photosensitive resin composition using such a polymer of a polyimide precursor. Further provided are a patterning process and a method of forming a cured film using the composition. Provided is a polymer of a polyimide precursor which comprises a structural unit represented by the following general formula (1), wherein, X1, R1, Z, a repeating number “s”, Y1, Rf, a repeating number “n” and “k” represent the same meanings as mentioned in the specification.
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公开(公告)号：US20210317268A1
公开(公告)日：2021-10-14
申请号：US16848589
申请日：2020-04-14
Inventor： Dmitry Zubarev , Hiroyuki Urano , Katsuya Takemura , Masashi Iio , Kazuya Honda , Yoshio Kawai
Abstract: Provided is a polymer that can be used as a base resin for a positive photosensitive resin composition and a negative photosensitive resin composition, wherein the positive photosensitive resin composition and the negative photosensitive resin composition are soluble in an aqueous alkaline solution, can form a fine pattern, can achieve high resolution, and have good mechanical properties even when they are cured at low temperature. Also provided are a positive photosensitive resin composition and a negative photosensitive resin composition using the polymer. The polymer is represented by general formulas (1) and/or (2): wherein T1 and T2 may be the same as, or different from, each other and represent any of —CO— and —SO2—; X1 is a tetravalent organic group; and l is 0 or 1; and X2 is a divalent organic group.
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