公开(公告)号：US09885956B2

公开(公告)日：2018-02-06

申请号：US14606161

申请日：2015-01-27

Applicant: FUJIFILM Corporation

Inventor： Tsukasa Yamanaka ,  Naoya Iguchi ,  Ryosuke Ueba ,  Kei Yamamoto

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/00 ,  G03F7/039 ,  G03F7/11 ,  G03F7/32

CPC classification number: G03F7/2022 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/70466

Abstract: A pattern forming method includes: (a) forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition (I) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (b) exposing the first film; (c) developing the exposed first film using a developer containing an organic solvent to form a first negative pattern; (e) forming a second film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition (II) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (f) exposing the second film; and (g) developing the exposed second film using a developer containing an organic solvent to form a second negative pattern in this order.

公开(公告)号：US09880472B2

公开(公告)日：2018-01-30

申请号：US15011804

申请日：2016-02-01

Applicant: FUJIFILM Corporation

Inventor： Ryosuke Ueba ,  Keita Kato

IPC: G03F7/40 ,  G03F7/20 ,  H01L21/027 ,  G03F7/00 ,  G03F7/32 ,  G03F7/36 ,  G03F7/039 ,  G03F7/11

CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/325 ,  G03F7/36 ,  H01L21/0273

Abstract: There is provided a pattern formation method comprising: a step (i) for forming a first negative type pattern by performing the specific steps on a substrate; a step (iii) for forming a lower layer by embedding the specific resin composition (2) which contains a second resin in a region of the substrate in which no film part with the first negative type pattern is formed; a step (iv) for forming an upper layer on the lower layer using the specific actinic ray-sensitive or radiation-sensitive resin composition (3); a step (v) for exposing the upper layer to light; a step (vi) for developing the upper layer using a developer which includes an organic solvent and forming a second negative type pattern on the lower layer; and a step (vii) for removing a portion of the lower layer, in the stated order.

公开(公告)号：US09429840B2

公开(公告)日：2016-08-30

申请号：US14568235

申请日：2014-12-12

Applicant: FUJIFILM Corporation

Inventor： Kei Yamamoto ,  Ryosuke Ueba

IPC: G03F7/26 ,  G03F7/00 ,  G03F7/039 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/405

Abstract: A pattern forming method includes: (i) a step of forming a first film by using an actinic ray-sensitive or radiation-sensitive resin composition (I), (ii) a step of exposing the first film, (iii) a step of developing the exposed first film by using an organic solvent-containing developer to form a negative pattern, (iv) a step of forming a second film on the negative pattern by using a specific composition (II), (v) a step of increasing polarity of the specific compound present in the second film, and (vi) a step of removing a specific area of the second film by using the organic solvent-containing remover.

Abstract translation: 图案形成方法包括：（i）通过使用光化射线敏感或辐射敏感性树脂组合物（I）形成第一膜的步骤，（ii）暴露第一膜的步骤，（iii） 通过使用含有机溶剂的显影剂显影曝光的第一膜以形成负图案，（iv）通过使用特定组合物（II）在负图案上形成第二膜的步骤，（v）增加极性的步骤 存在于第二膜中的具体化合物，和（vi）通过使用含有机溶剂的去除剂除去第二膜的比表面积的步骤。

公开(公告)号：US10126651B2

公开(公告)日：2018-11-13

申请号：US14606189

申请日：2015-01-27

Applicant: FUJIFILM Corporation

Inventor： Shinichi Sugiyama ,  Tsukasa Yamanaka ,  Ryosuke Ueba ,  Makoto Momota

IPC: G03F7/004 ,  G03F7/38 ,  G03F7/16 ,  G03F7/40 ,  G03F7/00 ,  G03F7/30 ,  G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32

Abstract: The pattern forming method of the invention includes (i) a step of forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) capable of increasing the polarity by the action of an acid to decrease the solubility in a developer including an organic solvent; (ii) a step of exposing the first film; (iii) a step of developing the exposed first film using a developer including an organic solvent to form a negative tone pattern; and (iv) a step of forming a second film on the second substrate so as to cover the periphery of the negative tone pattern.

公开(公告)号：US09810981B2

公开(公告)日：2017-11-07

申请号：US15229247

申请日：2016-08-05

Applicant: FUJIFILM Corporation

Inventor： Ryosuke Ueba ,  Naoya Iguchi ,  Tsukasa Yamanaka ,  Naohiro Tango ,  Michihiro Shirakawa ,  Keita Kato

IPC: G03F7/20 ,  G03F7/00 ,  G03F7/32 ,  H01L21/027 ,  H01L21/311 ,  G03F7/40

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/2053 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/31144

Abstract: A pattern formation method includes step (i) of forming a first negative type pattern on a substrate by performing step (i-1) of forming a first film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition, step (i-2) of exposing the first film and step (i-3) of developing the exposed first film in this order; step (iii) of forming a second film at least on the first negative type pattern using an actinic ray-sensitive or radiation-sensitive resin composition (2); step (v) of exposing the second film; and step (vi) of developing the exposed second film and forming a second negative type pattern at least on the first negative type pattern.