Invention Grant
- Patent Title: Extreme ultraviolet lithography process and mask
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Application No.: US14923243Application Date: 2015-10-26
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Publication No.: US09733562B2Publication Date: 2017-08-15
- Inventor: Yen-Cheng Lu , Jeng-Horng Chen , Shinn-Sheng Yu , Anthony Yen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/22 ; G03F7/20 ; G03F1/48 ; G03F1/52
Abstract:
An apparatus comprises a low EUV reflectivity (LEUVR) mask. The LEUVR mask includes a low thermal expansion material (LTEM) layer; a reflective multilayer (ML) over the LTEM layer; and a patterned absorption layer over the reflective ML. The reflective ML has less than 2% EUV reflectivity.
Public/Granted literature
- US20160048071A1 Extreme Ultraviolet Lithography Process and Mask Public/Granted day:2016-02-18
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