公开(公告)号：US20150140733A1

公开(公告)日：2015-05-21

申请号：US14583338

申请日：2014-12-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Naoto YAMADE ,  Junichi KOEZUKA ,  Miki SUZUKI ,  Yuichi SATO

IPC分类号： H01L29/66 ,  H01L21/265

CPC分类号： H01L29/66969 ,  H01L21/265 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/7869

摘要： To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

摘要翻译： 为了提供一种能够具有稳定的电特性并实现高可靠性的氧化物半导体的半导体器件，通过对与氧化物半导体层接触的基底绝缘层进行脱水或脱氢处理， 可以降低基极绝缘层，并且随后进行氧掺杂处理，可以将与水和氢一起消除的氧气供应到基底绝缘层。 通过形成与水和氢含量降低并且氧含量增加的基极绝缘层接触的氧化物半导体层，在水和氢进入氧化物半导体层的过程中可以向氧化物半导体层提供氧气 被压制

公开(公告)号：US20220246765A1

公开(公告)日：2022-08-04

申请号：US17727038

申请日：2022-04-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Katsuaki TOCHIBAYASHI ,  Ryota HODO ,  Kentaro SUGAYA ,  Naoto YAMADE

IPC分类号： H01L29/786 ,  H01L27/108 ,  H01L29/24 ,  H01L29/66

摘要： A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

公开(公告)号：US20210057587A1

公开(公告)日：2021-02-25

申请号：US17006987

申请日：2020-08-31

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yutaka OKAZAKI ,  Akihisa SHIMOMURA ,  Naoto YAMADE ,  Tomoya TAKESHITA ,  Tetsuhiro TANAKA

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

摘要： A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US20180261633A1

公开(公告)日：2018-09-13

申请号：US15911708

申请日：2018-03-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichi KOEZUKA ,  Naoto YAMADE ,  Yuhei SATO ,  Yutaka OKAZAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L27/12 ,  H01L21/477 ,  H01L29/786 ,  H01L21/02 ,  H01L21/383 ,  H01L21/44 ,  H01L29/66

CPC分类号： H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

公开(公告)号：US20170288064A1

公开(公告)日：2017-10-05

申请号：US15628699

申请日：2017-06-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo ITO ,  Daisuke MATSUBAYASHI ,  Masaharu NAGAI ,  Yoshiaki YAMAMOTO ,  Takashi HAMADA ,  Yutaka OKAZAKI ,  Shinya SASAGAWA ,  Motomu KURATA ,  Naoto YAMADE

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/46 ,  H01L29/66 ,  H01L21/425

CPC分类号： H01L29/78693 ,  H01L21/425 ,  H01L21/46 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7854 ,  H01L29/7855 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon).

公开(公告)号：US20160163544A1

公开(公告)日：2016-06-09

申请号：US15046962

申请日：2016-02-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichi KOEZUKA ,  Naoto YAMADE ,  Yuhei SATO ,  Yutaka OKAZAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/02 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

公开(公告)号：US20150255310A1

公开(公告)日：2015-09-10

申请号：US14635324

申请日：2015-03-02

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Suguru HONDO ,  Naoto YAMADE

IPC分类号： H01L21/425 ,  H01L21/385 ,  H01L21/477 ,  H01L21/465

CPC分类号： H01L21/425 ,  H01L21/465 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： Provided is a method for manufacturing a semiconductor device with favorable electrical characteristics. The following steps are performed in the following order: forming an oxide semiconductor film over a substrate having a substantially planar surface; selectively etching the oxide semiconductor film to form an oxide semiconductor layer; implanting an oxygen ion on a top surface of the oxide semiconductor layer and a side surface of the oxide semiconductor layer in a cross-section perpendicular to the substantially planar surface in a channel width direction of the oxide semiconductor layer from an angle 0°

摘要翻译： 提供一种具有良好的电气特性的半导体器件的制造方法。 按照以下顺序进行以下步骤：在具有大致平坦表面的基板上形成氧化物半导体膜; 选择性地蚀刻氧化物半导体膜以形成氧化物半导体层; 在氧化物半导体层的沟道宽度方向的垂直于基本上平坦的表面的截面中，角度为0°，将氧离子注入到氧化物半导体层的顶表面和氧化物半导体层的侧表面上 ; <90°; 在所述氧化物半导体层上形成绝缘层，并对所述氧化物半导体层进行热处理以将氧扩散到所述氧化物半导体层中。

公开(公告)号：US20220208988A1

公开(公告)日：2022-06-30

申请号：US17605187

申请日：2020-04-27

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Tsutomu MURAKAWA ,  Shinya SASAGAWA ,  Naoto YAMADE ,  Takashi HAMADA ,  Hiroki KOMAGATA

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L21/225

摘要： A semiconductor device with less variations in transistor characteristics is provided.
A first insulator is deposited; an island-shaped stacked body in which a first oxide, a second oxide, and a first conductor are stacked in this order is formed over the first insulator; a second insulator is formed over the first insulator and the stacked body; an opening portion for exposing the stacked body is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor exposed in the opening portion, a second conductor and a third conductor are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide that are exposed in the opening portion; oxygen addition treatment is performed on a vicinity of an interface between the second oxide and the first oxide film through the first oxide film and then heat treatment is performed; and a first insulating film and a first conductive film are deposited over the first oxide film, and then parts of the first conductive film, the first insulating film, the first oxide film, and the second insulator are removed by chemical polishing treatment to expose the second insulator and form a fourth conductor, a third insulator, and a third oxide in the opening portion provided in the second insulator.

公开(公告)号：US20200052099A1

公开(公告)日：2020-02-13

申请号：US16492282

申请日：2018-02-28

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Naoto YAMADE ,  Hiroshi FUJIKI ,  Tomoaki MORIWAKA ,  Shunsuke KIMURA

IPC分类号： H01L29/66 ,  H01L29/10

摘要： A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

公开(公告)号：US20200006319A1

公开(公告)日：2020-01-02

申请号：US16561501

申请日：2019-09-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Naoki OKUNO ,  Kosei NEI ,  Hiroaki HONDA ,  Naoto YAMADE ,  Hiroshi FUJIKI

IPC分类号： H01L27/02 ,  H01L27/11521 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786

摘要： A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.