公开(公告)号：US20230335646A1

公开(公告)日：2023-10-19

申请号：US18211652

申请日：2023-06-20

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L29/66

CPC分类号： H01L29/78618 ,  H01L29/7869 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78696

摘要： A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20210098629A1

公开(公告)日：2021-04-01

申请号：US17120774

申请日：2020-12-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa SHIMOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Yuhei SATO ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24

摘要： To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US20180182894A1

公开(公告)日：2018-06-28

申请号：US15904830

申请日：2018-02-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yuhei SATO ,  Keiji SATO ,  Toshinari SASAKI ,  Tetsunori MARUYAMA ,  Atsuo ISOBE ,  Tsutomu MURAKAWA ,  Sachiaki TEZUKA

IPC分类号： H01L29/786 ,  H01L21/477

CPC分类号： H01L29/7869 ,  H01L21/477

摘要： To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.

公开(公告)号：US20170141233A1

公开(公告)日：2017-05-18

申请号：US15417266

申请日：2017-01-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC分类号： H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L29/24

CPC分类号： H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

摘要： Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US20170125553A1

公开(公告)日：2017-05-04

申请号：US15350213

申请日：2016-11-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Masayuki SAKAKURA ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Yuhei SATO

IPC分类号： H01L29/66 ,  H01L21/465 ,  H01L21/02 ,  H01L21/441 ,  H01L29/786 ,  H01L21/477

CPC分类号： H01L29/66969 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1156 ,  H01L29/401 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.

公开(公告)号：US20200227566A1

公开(公告)日：2020-07-16

申请号：US16833918

申请日：2020-03-30

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L29/66

摘要： A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20180261633A1

公开(公告)日：2018-09-13

申请号：US15911708

申请日：2018-03-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichi KOEZUKA ,  Naoto YAMADE ,  Yuhei SATO ,  Yutaka OKAZAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L27/12 ,  H01L21/477 ,  H01L29/786 ,  H01L21/02 ,  H01L21/383 ,  H01L21/44 ,  H01L29/66

CPC分类号： H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

公开(公告)号：US20170294542A1

公开(公告)日：2017-10-12

申请号：US15632764

申请日：2017-06-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Yuhei SATO ,  Kazuhiro TSUTSUI

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423

CPC分类号： H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

摘要： A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.

公开(公告)号：US20170012138A1

公开(公告)日：2017-01-12

申请号：US15270064

申请日：2016-09-20

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Yuhei SATO ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L29/423

CPC分类号： H01L29/78648 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2029/42388

摘要： A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.

摘要翻译： 提供具有高场效应迁移率的晶体管。 提供具有稳定电特性的晶体管。 提供了处于断开状态（非导通状态）的小电流的晶体管。 提供了包括这种晶体管的半导体器件。 第一电极形成在衬底上，第一绝缘层与第一电极的侧表面相邻地形成，并且形成第二绝缘层以覆盖第一绝缘层并与第一绝缘层的至少一部分表面接触 第一个电极。 第一电极的表面由不容易透过杂质元素的导电材料形成。 第二绝缘层由不容易透过杂质元素的绝缘材料形成。 在第一电极上形成氧化物半导体层，其间设置有第三绝缘层。

公开(公告)号：US20160284564A1

公开(公告)日：2016-09-29

申请号：US15169925

申请日：2016-06-01

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA ,  Junichi KOEZUKA

IPC分类号： H01L21/40 ,  H01L21/02 ,  H01L21/383 ,  H01L29/66 ,  H01L21/477

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

摘要翻译： 在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。 因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。 使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。