公开(公告)号：US20240266222A1

公开(公告)日：2024-08-08

申请号：US18613772

申请日：2024-03-22

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Tetsuya KAKEHATA ,  Hiroki KOMAGATA ,  Yuji EGI

IPC分类号： H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/823412 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78696 ,  H01L29/66742

摘要： A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US20230047051A1

公开(公告)日：2023-02-16

申请号：US17979807

申请日：2022-11-03

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Tetsuya KAKEHATA ,  Hiroki KOMAGATA ,  Yuji EGI

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L29/66

摘要： A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US20220238719A1

公开(公告)日：2022-07-28

申请号：US17617015

申请日：2020-06-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Hiromi SAWAI ,  Hiroki KOMAGATA ,  Yasuhiro JINBO ,  Naoki OKUNO ,  Yoshihiro KOMATSU ,  Motoharu ANDO ,  Tomoaki MORIWAKA ,  Koji MORIYA ,  Jun ISHIKAWA

IPC分类号： H01L29/786

摘要： A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a semiconductor film, a pair of blocking films over the semiconductor film, and an insulating film provided over the semiconductor film and between the pair of blocking films. The semiconductor film includes a pair of n-type regions and an i-type region provided between the pair of n-type regions. The n-type regions overlap with the blocking films. The i-type region overlaps with the insulating film.

公开(公告)号：US20210320192A1

公开(公告)日：2021-10-14

申请号：US17270492

申请日：2019-08-26

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Hiroki KOMAGATA

IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L21/443 ,  H01L21/383

摘要： A semiconductor device with high reliability is provided. The present invention relates to a method for manufacturing a transistor including an oxide semiconductor. A stacked-layer structure of an oxide semiconductor and an insulator functioning as a gate insulator is subjected to microwave-excited plasma treatment, whereby the carrier concentration of the oxide semiconductor is reduced and the barrier property of the gate insulator is improved. In addition, a conductor functioning as an electrode and the insulator functioning as a gate insulator are formed in contact with the oxide semiconductor and then the microwave-excited plasma treatment is performed, whereby a high-resistance region and a low-resistance region can be formed in the oxide semiconductor in a self-aligned manner. Moreover, the microwave-excited plasma treatment is performed under an atmosphere containing oxygen with a high pressure, whereby a transistor having favorable electrical characteristics can be provided.

公开(公告)号：US20240055299A1

公开(公告)日：2024-02-15

申请号：US18383086

申请日：2023-10-24

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Tsutomu MURAKAWA ,  Hiroki KOMAGATA ,  Daisuke MATSUBAYASHI ,  Noritaka ISHIHARA ,  Yusuke NONAKA

IPC分类号： H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/786 ,  H10B12/00

CPC分类号： H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/7869 ,  H10B12/00

摘要： A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US20200266289A1

公开(公告)日：2020-08-20

申请号：US16642998

申请日：2018-08-28

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Tsutomu MURAKAWA ,  Hiroki KOMAGATA ,  Naoki OKUNO ,  Noritaka ISHIHARA ,  Yusuke NONAKA

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L27/108

摘要： A semiconductor device with favorable electrical characteristics and reliability is provided. A first insulator is formed. A second insulator is formed over the first insulator. An island-shaped oxide is formed over the second insulator. A stacked body of a third insulator and a conductor is formed over the oxide. The resistance of the oxide is selectively reduced by forming a film containing a metal element over the oxide and the stacked body. After a fourth insulator is formed over the second insulator, the oxide, and the stacked body, an opening portion exposing the second insulator is formed in the fourth insulator. A fifth insulator is formed over the second insulator and the fourth insulator. Oxygen introduction treatment is performed on the fifth insulator.

公开(公告)号：US20190229192A1

公开(公告)日：2019-07-25

申请号：US16247631

申请日：2019-01-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hiroki KOMAGATA ,  Naoki OKUNO ,  Yutaka OKAZAKI ,  Hiroshi FUJIKI

IPC分类号： H01L29/20 ,  H01L29/10 ,  H01L29/221 ,  H01L29/423 ,  H01L29/786

摘要： A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator over a substrate, an oxide over the first insulator, a second insulator over the oxide, a conductor overlapping with the oxide with the second insulator therebetween, a third insulator in contact with a top surface of the oxide, a fourth insulator in contact with a top surface of the third insulator, a side surface of the second insulator, and a side surface of the conductor, and a fifth insulator in contact with a side surface of the fourth insulator, a side surface of the third insulator, and the top surface of the oxide. The third insulator has a lower oxygen permeability than the fourth insulator.

公开(公告)号：US20220375938A1

公开(公告)日：2022-11-24

申请号：US17772423

申请日：2020-10-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Yasumasa YAMANE ,  Shuhei NAGATSUKA ,  Takashi HAMADA ,  Hiroki KOMAGATA

IPC分类号： H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

摘要： A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are deposited to be in contact with the first insulator; a first opening reaching the oxide is formed in the conductive layer, the insulating layer, the third insulator, and the fourth insulator; a fifth insulator, a sixth insulator, and a conductor are formed in the first opening; a seventh insulator is deposited over the fourth insulator, the fifth insulator, and the sixth insulator; a mask is formed in a first region over the seventh insulator in a top view; oxygen is implanted into a second region not overlapping the first region in the top view; heat treatment is performed; a second opening reaching the fourth insulator is formed in the seventh insulator; and heat treatment is performed.

公开(公告)号：US20210320193A1

公开(公告)日：2021-10-14

申请号：US17271716

申请日：2019-08-30

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Tetsuya KAKEHATA ,  Hiroki KOMAGATA ,  Yuji EGI

IPC分类号： H01L29/66 ,  H01L21/02

摘要： A semiconductor device having favorable electrical characteristics is provided. A manufacturing method of the semiconductor device includes the steps of forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300° C., and a step of introducing a first gas containing silicon into a chamber and a step of introducing a second gas that contains oxygen radicals and does not contain hydrogen atoms into the chamber are included.

公开(公告)号：US20180006124A1

公开(公告)日：2018-01-04

申请号：US15628945

申请日：2017-06-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tsutomu MURAKAWA ,  Toshihiko TAKEUCHI ,  Hiroki KOMAGATA ,  Hiromi SAWAI ,  Yasumasa YAMANE ,  Shota SAMBONSUGE ,  Kazuya SUGIMOTO ,  Shunpei YAMAZAKI

IPC分类号： H01L29/24 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/24 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/7881

摘要： A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.