公开(公告)号：US20190139783A1

公开(公告)日：2019-05-09

申请号：US16093268

申请日：2017-04-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kazutaka KURIKI ,  Yuji EGI ,  Noritaka ISHIHARA ,  Yusuke NONAKA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Daisuke MATSUBAYASHI

IPC: H01L21/4757 ,  H01L27/105 ,  H01L27/12 ,  H01L29/66 ,  H01L21/443 ,  H01L21/477 ,  H01L21/02 ,  H01L29/786 ,  H01J37/32

Abstract: A semiconductor device having high reliability is provided.A first conductor is formed, a first insulator is formed over the first conductor, a second insulator is formed over the first insulator, a third insulator is formed over the second insulator, microwave-excited plasma treatment is performed on the third insulator, an island-shaped first oxide semiconductor is formed over the third insulator and a second conductor and a third conductor are formed over the first oxide semiconductor, an oxide semiconductor film is formed over the first oxide semiconductor, the second conductor, and the third conductor, a first insulating film is formed over the oxide semiconductor film, a conductive film is formed over the first insulating film, a fourth insulator and a fourth conductor are formed by partly removing the first insulating film and the conductive film, a second insulating film is formed to cover the oxide semiconductor film, the fourth insulator, and the fourth conductor, a second oxide semiconductor and a fifth insulator are formed by partly removing the oxide semiconductor film and the second insulating film to expose a side surface of the first oxide semiconductor, a sixth insulator is formed in contact with the side surface of the first oxide semiconductor and a side surface of the second oxide semiconductor, a seventh insulator is formed in contact with the sixth insulator, and heat treatment is performed.

公开(公告)号：US20150048365A1

公开(公告)日：2015-02-19

申请号：US14496500

申请日：2014-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Masashi OOTA ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

公开(公告)号：US20140113405A1

公开(公告)日：2014-04-24

申请号：US14055970

申请日：2013-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Ryosuke WATANABE ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L29/66

CPC classification number: H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

Abstract: To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.

Abstract translation: 形成具有低密度局部化水平的氧化物半导体膜。 为了改善包括氧化物半导体的半导体器件的电特性。 在与用作沟道的氧化物半导体膜接触的含有In或Ga的氧化物膜上加氧后，进行热处理，使含有In或Ga的氧化物膜中的氧转移到作为通道发挥作用的氧化物半导体膜， 使得氧化物半导体膜中的氧空位量减少。 此外，形成含有In或Ga的氧化物膜，在氧化膜上添加氧，在氧化膜上形成氧化物半导体膜，然后进行热处理。

公开(公告)号：US20220020586A1

公开(公告)日：2022-01-20

申请号：US17491637

申请日：2021-10-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Masashi OOTA ,  Yoichi KUROSAWA ,  Noritaka ISHIHARA

IPC: H01L21/02 ,  C23C14/08 ,  C01G15/00 ,  B82Y30/00 ,  C23C14/34 ,  C30B23/08 ,  C30B29/22 ,  H01J37/34 ,  C30B1/04 ,  C30B28/02 ,  C30B29/68 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

公开(公告)号：US20200266281A1

公开(公告)日：2020-08-20

申请号：US16755208

申请日：2018-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomoki HIRAMATSU ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Yuta ENDO

IPC: H01L29/51 ,  H01L21/8238

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.

公开(公告)号：US20200035711A1

公开(公告)日：2020-01-30

申请号：US16594481

申请日：2019-10-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Noritaka ISHIHARA ,  Motoki NAKASHIMA ,  Yoichi KUROSAWA ,  Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L21/02 ,  H01L49/02 ,  H01L29/66 ,  H01L29/786 ,  H01L21/425 ,  H01L21/477

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

公开(公告)号：US20180323220A1

公开(公告)日：2018-11-08

申请号：US16024997

申请日：2018-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  H01L29/24 ,  G02F1/1368 ,  H01L29/04 ,  H01L29/786 ,  H01L21/66 ,  G01N23/207 ,  H01L29/66

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20160197193A1

公开(公告)日：2016-07-07

申请号：US15068708

申请日：2016-03-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US20150255534A1

公开(公告)日：2015-09-10

申请号：US14636477

申请日：2015-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshinori YAMADA ,  Yusuke NONAKA ,  Masashi OOTA ,  Yoichi KUROSAWA ,  Noritaka ISHIHARA ,  Takashi HAMADA ,  Mitsuhiro ICHIJO ,  Yuji EGI

IPC: H01L29/04 ,  H01L29/36 ,  H01L29/786

CPC classification number: H01L29/78693 ,  H01L27/1156 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

Abstract translation: 提供了可以用作晶体管等的半导体的氧化物的形成方法。 特别地，提供了形成具有较少缺陷如晶界的氧化物的方法。 本发明的一个实施例是包括氧化物半导体，绝缘体和导体的半导体器件。 氧化物半导体包括与导体重叠的区域，其间具有绝缘体。 氧化物半导体包括当量圆直径为1nm以上的晶粒和等效圆直径小于1nm的晶粒。

公开(公告)号：US20130292675A1

公开(公告)日：2013-11-07

申请号：US13870399

申请日：2013-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masashi TSUBUKU ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Masashi OOTA ,  Hideyuki KISHIDA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.