公开(公告)号：US20220336670A1

公开(公告)日：2022-10-20

申请号：US17697152

申请日：2022-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiromi SAWAI ,  Ryo TOKUMARU ,  Toshihiko TAKEUCHI ,  Tsutomu MURAKAWA ,  Sho NAGAMATSU ,  Tomoaki MORIWAKA

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/04 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US20210210635A1

公开(公告)日：2021-07-08

申请号：US16760050

申请日：2018-11-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiromi SAWAI ,  Ryo TOKUMARU ,  Toshihiko TAKEUCHI ,  Tsutomu MURAKAWA ,  Sho NAGAMATSU ,  Tomoaki MORIWAKA

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/04 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US20240431148A1

公开(公告)日：2024-12-26

申请号：US18698966

申请日：2022-10-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuichi YANAGISAWA ,  Ryota HODO ,  Hiromi SAWAI ,  Hideaki SHISHIDO ,  Daiki NAKAMURA

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/38

Abstract: A display device that can easily achieve a higher resolution is provided. A display device with high display quality is provided. The display device includes a pixel electrode, a first organic layer, a second organic layer, a first insulating layer, a second insulating layer, and a common electrode. The first insulating layer includes a first portion in contact with part of a top surface of the pixel electrode, a second portion in contact with a side surface of the pixel electrode, and a third portion not in contact with the pixel electrode. The first organic layer includes a fourth portion in contact with another part of the top surface of the pixel electrode and a fifth portion in contact with the first portion. The second organic layer is in contact with the third portion and isolated from the first organic layer. The second insulating layer covers the fifth portion and the second organic layer and is in contact with the first insulating layer between the first organic layer and the second organic layer. The common electrode includes a portion overlapping with the fourth portion and a portion overlapping with the second organic layer with the second insulating layer therebetween. The first organic layer and the second organic layer contain the same material.

公开(公告)号：US20230113593A1

公开(公告)日：2023-04-13

申请号：US17915211

申请日：2021-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshihiro KOMATSU ,  Shota MIZUKAMI ,  Shinobu KAWAGUCHI ,  Hiromi SAWAI ,  Yasumasa YAMANE ,  Yuji EGI ,  Yujiro SAKURADA ,  Shinya SASAGAWA

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/51 ,  H01L21/02

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.

公开(公告)号：US20180114838A1

公开(公告)日：2018-04-26

申请号：US15782165

申请日：2017-10-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Hiromi SAWAI ,  Hajime KIMURA

IPC: H01L29/22 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10

CPC classification number: H01L29/78696 ,  H01L27/10 ,  H01L27/1225 ,  H01L29/2206 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78618

Abstract: A high-performance and highly reliable semiconductor device is provided. The semiconductor device includes: a first oxide; a source electrode; a drain electrode; a second oxide over the first oxide, the source electrode, and the drain electrode; a gate insulating film over the second oxide; and a gate electrode over the gate insulating film. The source electrode is electrically connected to the first oxide. The drain electrode is electrically connected to the first oxide. Each of the first oxide and the second oxide includes In, an element M (M is Al, Ga, Y, or Sn), and Zn. Each of the first oxide and the second oxide includes more In atoms than element M atoms. An atomic ratio of the In, the Zn, and the element M in the first oxide is equal to or similar to an atomic ratio of the In, the Zn, and the element M in the second oxide.

公开(公告)号：US20240423026A1

公开(公告)日：2024-12-19

申请号：US18702404

申请日：2022-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuichi YANAGISAWA ,  Ryota HODO ,  Hiromi SAWAI

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/124

Abstract: A high-resolution display device and a fabrication method thereof are provided. The display device includes a first insulating layer, a second insulating layer, a first light-emitting element, a second light-emitting element, and a resin layer. The first light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode, and the second light-emitting element includes a second pixel electrode, a second organic layer, and the common electrode. The first insulator has a groove. The groove has a region overlapping with the first pixel electrode and a region overlapping with the second pixel electrode. The second insulating layer has a region in contact with part of the top surface of the first organic layer, a region in contact with the side surface of the first organic layer, and a region in contact with the first insulating layer below the first pixel electrode. The resin layer is positioned between the first organic layer and the second organic layer. The common electrode is provided to cover the top surface of the resin layer.

公开(公告)号：US20240006539A1

公开(公告)日：2024-01-04

申请号：US18368782

申请日：2023-09-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiromi SAWAI ,  Ryo TOKUMARU ,  Toshihiko TAKEUCHI ,  Tsutomu MURAKAWA ,  Sho NAGAMATSU ,  Tomoaki MORIWAKA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/06 ,  H01L29/66 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/66742 ,  H10B12/05 ,  H10B12/315

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US20220320339A1

公开(公告)日：2022-10-06

申请号：US17615859

申请日：2020-06-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Hiromi SAWAI ,  Ryosuke WATANABE ,  Shinobu KAWAGUCHI ,  Shunichi ITO

IPC: H01L29/786 ,  H01L29/66

Abstract: A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the metal oxide, the diffusion length of hydrogen is 200 nm or less and absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated with the temperature being 400° C. and 1 hour.

公开(公告)号：US20220189766A1

公开(公告)日：2022-06-16

申请号：US17436752

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuichi YANAGISAWA ,  Hiromi SAWAI ,  Daisuke MATSUBAYASHI

IPC: H01L21/02 ,  H01L27/11582 ,  H01L21/3213

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first oxide, an insulator over the first oxide, a first conductor over the insulator, a second conductor electrically connected to the first oxide, and a second oxide provided between the first oxide and the second conductor, and the contact area between the second oxide and the second conductor is larger than the contact area between the second oxide and the first oxide.

公开(公告)号：US20180013005A1

公开(公告)日：2018-01-11

申请号：US15697513

申请日：2017-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Haruyuki BABA ,  Akio SUZUKI ,  Hiromi SAWAI ,  Masahiko HAYAKAWA ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L21/203

CPC classification number: H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/203 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.