- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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申请号： US17727038申请日： 2022-04-22
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公开(公告)号： US20220246765A1公开(公告)日： 2022-08-04
- 发明人: Shunpei YAMAZAKI , Katsuaki TOCHIBAYASHI , Ryota HODO , Kentaro SUGAYA , Naoto YAMADE
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2018-040286 20180307,JP2018-040287 20180307
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L27/108 ; H01L29/24 ; H01L29/66
摘要：
A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.
公开/授权文献
- US11869979B2 Semiconductor device 公开/授权日：2024-01-09
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