- 专利标题： SEMICONDUCTOR DEVICE
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申请号： US17006987申请日： 2020-08-31
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公开(公告)号： US20210057587A1公开(公告)日： 2021-02-25
- 发明人: Yutaka OKAZAKI , Akihisa SHIMOMURA , Naoto YAMADE , Tomoya TAKESHITA , Tetsuhiro TANAKA
- 申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2015-140794 20150714
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L29/45 ; H01L29/49 ; H01L27/12
摘要：
A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.
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