公开(公告)号：US20240128380A1

公开(公告)日：2024-04-18

申请号：US18526315

申请日：2023-12-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yutaka OKAZAKI ,  Akihisa SHIMOMURA ,  Naoto YAMADE ,  Tomoya TAKESHITA ,  Tetsuhiro TANAKA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78648 ,  H01L29/7869

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US20210184042A1

公开(公告)日：2021-06-17

申请号：US17167286

申请日：2021-02-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Akihisa SHIMOMURA ,  Yuji EGI ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US20190341495A1

公开(公告)日：2019-11-07

申请号：US16513826

申请日：2019-07-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yuhei SATO ,  Yasumasa YAMANE ,  Yoshitaka YAMAMOTO ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Yutaka OKAZAKI ,  Naoki OKUNO ,  Takahisa ISHIYAMA

IPC: H01L29/786 ,  H01L29/417

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US20190221674A1

公开(公告)日：2019-07-18

申请号：US16367329

申请日：2019-03-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yutaka OKAZAKI ,  Akihisa SHIMOMURA ,  Naoto YAMADE ,  Tomoya TAKESHITA ,  Tetsuhiro TANAKA

IPC: H01L29/786 ,  H01L29/45 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78648 ,  H01L29/7869

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US20180190677A1

公开(公告)日：2018-07-05

申请号：US15897318

申请日：2018-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  B23K26/073 ,  H01L21/02 ,  H01L21/20 ,  H01L21/3213 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20180151743A1

公开(公告)日：2018-05-31

申请号：US15865308

申请日：2018-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yuhei SATO ,  Yasumasa YAMANE ,  Yoshitaka YAMAMOTO ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Yutaka OKAZAKI ,  Naoki OKUNO ,  Takahisa ISHIYAMA

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US20180151742A1

公开(公告)日：2018-05-31

申请号：US15576445

申请日：2016-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Motomu KURATA ,  Shinya SASAGAWA ,  Katsuaki TOCHIBAYASHI ,  Satoru OKAMOTO ,  Akihisa SHIMOMURA

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/105 ,  H01L27/12 ,  H01L27/092 ,  H01L27/146 ,  H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  G06K19/07 ,  G06F9/32

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G06F9/327 ,  G06K19/0723 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/823412 ,  H01L21/8238 ,  H01L21/823807 ,  H01L21/8258 ,  H01L23/3114 ,  H01L23/49861 ,  H01L24/48 ,  H01L27/06 ,  H01L27/0688 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L27/115 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/146 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/3262 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78609 ,  H01L29/78648 ,  H01L29/788 ,  H01L29/792 ,  H01L51/50 ,  H01L2224/48227 ,  H05B33/14

Abstract: A minute transistor is provided. Alternatively, a transistor with low parasitic capacitance is provided. Alternatively, a transistor having high frequency characteristics is provided. Alternatively, a novel transistor is provided.A transistor including a semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator is manufactured by forming a hard mask layer including a fourth conductor over the second insulator, a third insulator over the fourth conductor, forming an opening portion in the second insulator with the hard mask layer as the mask, eliminating the hard mask layer by forming the opening portion, and forming the first insulator and the first conductor in the opening portion.

公开(公告)号：US20170018655A1

公开(公告)日：2017-01-19

申请号：US15204015

申请日：2016-07-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka OKAZAKI ,  Akihisa SHIMOMURA ,  Naoto YAMADE ,  Tomoya TAKESHITA ,  Tetsuhiro TANAKA

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78648 ,  H01L29/7869

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

Abstract translation: 提供具有良好电特性的晶体管。 本发明的一个实施例是一种半导体器件，包括半导体，与半导体接触的第一绝缘体，与第一绝缘体接触的第一导体，并与位于半导体与第一导体之间的第一绝缘体与半导体重叠， 以及与半导体接触的第二导体和第三导体。 第一至第三导体中的一个或多个包括含有钨和选自硅，碳，锗，锡，铝和镍中的一种或多种元素的区域。

公开(公告)号：US20160293768A1

公开(公告)日：2016-10-06

申请号：US15184213

申请日：2016-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Akihisa SHIMOMURA ,  Tetsuhiro TANAKA ,  Sachiaki TEZUKA

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/105 ,  H01L29/26 ,  H01L29/41733 ,  H01L29/78 ,  H01L29/78693 ,  H01L29/78696

Abstract: Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other of the oxide semiconductor layers is substantially i-type. The semiconductor device includes the two oxide semiconductor layers sandwiched between a pair of oxide layers which have a common element included in any of the two oxide semiconductor layers. A double-well structure is formed in a region including the two oxide semiconductor layers and the pair of oxide layers, leading to the formation of a channel formation region in the n-doped region. This structure allows the channel formation region to be surrounded by an i-type oxide semiconductor, which contributes to the production of a semiconductor device that is capable of feeding enormous current.

Abstract translation: 公开了包括两个氧化物半导体层的半导体器件，其中氧化物半导体层中的一个具有n掺杂区域，而另一个氧化物半导体层基本上是i型。 半导体器件包括夹在一对氧化物层之间的两个氧化物半导体层，其具有包含在两个氧化物半导体层中的任一个中的共同元素。 在包括两个氧化物半导体层和一对氧化物层的区域中形成双阱结构，导致在n掺杂区域中形成沟道形成区域。 该结构允许沟道形成区域被i型氧化物半导体包围，这有助于生产能够馈送大量电流的半导体器件。

公开(公告)号：US20160172500A1

公开(公告)日：2016-06-16

申请号：US14963945

申请日：2015-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Yuhei SATO ,  Kazuhiro TSUTSUI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.

Abstract translation: 提供具有稳定电特性的晶体管。 晶体管包括在衬底上的第一绝缘体; 第一绝缘子上的第一至第三绝缘体; 在所述第三氧化物绝缘体上的第二绝缘体; 第二绝缘体上的第一导体; 以及在第一导体上的第三绝缘体。 每个第一和第二氧化物绝缘体的导带最小值的能级比氧化物半导体的能级更接近真空度。 第三氧化物绝缘体的导带最小值的能级比第二氧化物绝缘体的能级更接近真空度。 第一绝缘体包含氧。 通过热解吸光谱测定从第一绝缘体释放的氧分子的数量大于或等于1E14分子/ cm 2且小于或等于1E16分子/ cm 2。