公开(公告)号：US20160111451A1

公开(公告)日：2016-04-21

申请号：US14924100

申请日：2015-10-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract translation: 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US20210118916A1

公开(公告)日：2021-04-22

申请号：US17133708

申请日：2020-12-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/3213 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786 ,  B23K26/073

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20190341404A1

公开(公告)日：2019-11-07

申请号：US16515117

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/786 ,  H01L21/84 ,  B23K26/073 ,  H01L21/20 ,  H01L29/66

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20150137132A1

公开(公告)日：2015-05-21

申请号：US14589369

申请日：2015-01-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji ONO ,  Hideomi SUZAWA ,  Tatsuya ARAO

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Abstract translation: 公开了一种电致发光器件，其具有衬底，衬底上的薄膜晶体管，薄膜晶体管上的绝缘膜，绝缘膜上的电致发光元件，电致发光元件上的钝化膜以及钝化膜上的对置衬底 。 电致发光元件被配置为通过对置基板发光，并且用填充物填充基板和对向基板之间的空间。 电致发光元件的特征在于薄膜晶体管的栅电极的锥形侧面。

公开(公告)号：US20130126973A1

公开(公告)日：2013-05-23

申请号：US13689041

申请日：2012-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya ARAO

IPC: H01L27/088

CPC classification number: H01L27/124 ,  G02F1/1339 ,  G02F1/13392 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/324 ,  H01L27/088 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/7842 ,  H01L29/7845 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely influences a stress that a semiconductor film receives, and there has been a case where the internal stress becomes a cause of reduction in electric characteristics of a TFT depending on the internal stress. According to the present invention, an impurity element is introduced into a wiring, or both the introduction of an impurity element and heat treatment are performed, whereby the wiring can be controlled to have a desired internal stress. It is effective that the present invention is particularly applied to a gate electrode. Further, it is possible that the introduction of an impurity element and the heat treatment are conducted to only a desired region to conduct control to attain a desired internal stress.

Abstract translation: 如果TFT的布线的内部应力强，则发生剥离的情况。 特别地，栅电极的内部应力极大地影响半导体膜接收的应力，并且存在内应力成为根据内部应力降低TFT的电特性的原因的情况。 根据本发明，将杂质元素引入布线中，或者进行杂质元素的引入和热处理，由此可以将布线控制为具有期望的内应力。 本发明特别适用于栅电极是有效的。 此外，可以将杂质元素的引入和热处理仅进行到期望的区域以进​​行控制以获得期望的内应力。

公开(公告)号：US20150060871A1

公开(公告)日：2015-03-05

申请号：US14534217

申请日：2014-11-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya ARAO ,  Hiroyuki MIYAKE

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1288 ,  H01L27/1296

Abstract: A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a thin film semiconductor device each having the semiconductor element. Also, a semiconductor element is operated without being affected even if there is slight mask deviation. In view of them, a plurality of gate electrodes formed so as to overlap a lower concentration impurity region of a semiconductor layer than drain regions on a drain region side. Also, source regions and the drain regions corresponding to the respective gate electrodes are formed so that current flows in opposite directions each other through channel regions corresponding to the gate electrodes. Further, the number of the channel regions in which a current flows in a first direction is equal to the number of the channel regions in which a current flows in a direction opposite to the first direction.

公开(公告)号：US20140203309A1

公开(公告)日：2014-07-24

申请号：US14223366

申请日：2014-03-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji ONO ,  Hideomi SUZAWA ,  Tatsuya ARAO

IPC: H01L33/08

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

公开(公告)号：US20140014996A1

公开(公告)日：2014-01-16

申请号：US14027871

申请日：2013-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji ONO ,  Hideomi SUZAWA ,  Tatsuya ARAO

IPC: H01L33/62

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Abstract translation: 公开了一种电致发光器件，其具有衬底，衬底上的薄膜晶体管，薄膜晶体管上的绝缘膜，绝缘膜上的电致发光元件，电致发光元件上的钝化膜以及钝化膜上的对置衬底 。 电致发光元件被配置为通过对置基板发光，并且用填充物填充基板和对向基板之间的空间。 电致发光元件的特征在于薄膜晶体管的栅电极的锥形侧面。

公开(公告)号：US20180190677A1

公开(公告)日：2018-07-05

申请号：US15897318

申请日：2018-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  B23K26/073 ,  H01L21/02 ,  H01L21/20 ,  H01L21/3213 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20160254277A1

公开(公告)日：2016-09-01

申请号：US15153127

申请日：2016-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya ARAO

IPC: H01L27/12 ,  H01L29/78 ,  H01L21/324 ,  G02F1/1368 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/786 ,  G02F1/1339

CPC classification number: H01L27/124 ,  G02F1/1339 ,  G02F1/13392 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/324 ,  H01L27/088 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/7842 ,  H01L29/7845 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely influences a stress that a semiconductor film receives, and there has been a case where the internal stress becomes a cause of reduction in electric characteristics of a TFT depending on the internal stress. According to the present invention, an impurity element is introduced into a wiring, or both the introduction of an impurity element and heat treatment are performed, whereby the wiring can be controlled to have a desired internal stress. It is effective that the present invention is particularly applied to a gate electrode. Further, it is possible that the introduction of an impurity element and the heat treatment are conducted to only a desired region to conduct control to attain a desired internal stress.