公开(公告)号：US20230299183A1

公开(公告)日：2023-09-21

申请号：US18135793

申请日：2023-04-18

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Naoto YAMADE ,  Hiroshi FUJIKI ,  Tomoaki MORIWAKA ,  Shunsuke KIMURA

IPC分类号： H01L29/66 ,  H01L29/10

CPC分类号： H01L29/66969 ,  H01L29/1054 ,  H01L29/4966

摘要： A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

公开(公告)号：US20210167194A1

公开(公告)日：2021-06-03

申请号：US17176211

申请日：2021-02-16

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Naoto YAMADE ,  Hiroshi FUJIKI ,  Tomoaki MORIWAKA ,  Shunsuke KIMURA

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/49

摘要： A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

公开(公告)号：US20200052099A1

公开(公告)日：2020-02-13

申请号：US16492282

申请日：2018-02-28

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Naoto YAMADE ,  Hiroshi FUJIKI ,  Tomoaki MORIWAKA ,  Shunsuke KIMURA

IPC分类号： H01L29/66 ,  H01L29/10

摘要： A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

公开(公告)号：US20240258409A1

公开(公告)日：2024-08-01

申请号：US18624488

申请日：2024-04-02

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Naoto YAMADE ,  Hiroshi FUJIKI ,  Tomoaki MORIWAKA ,  Shunsuke KIMURA

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/49

CPC分类号： H01L29/66969 ,  H01L29/1054 ,  H01L29/4966

摘要： A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.