- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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申请号： US18624488申请日： 2024-04-02
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公开(公告)号： US20240258409A1公开(公告)日： 2024-08-01
- 发明人: Shunpei YAMAZAKI , Toshihiko TAKEUCHI , Naoto YAMADE , Hiroshi FUJIKI , Tomoaki MORIWAKA , Shunsuke KIMURA
- 申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP 17047420 2017.03.13 JP 17072177 2017.03.31
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/10 ; H01L29/49
摘要：
A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
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