公开(公告)号：US20180266991A1

公开(公告)日：2018-09-20

申请号：US15459556

申请日：2017-03-15

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Jianan Kan ,  Peiyuan Wang ,  Chando Park ,  Seung Hyuk Kang

IPC: G01N27/74 ,  G01R33/12 ,  G01R33/09 ,  G01N33/543 ,  G01N27/12

CPC classification number: G01N27/745 ,  G01N27/122 ,  G01N33/5438 ,  G01R33/063 ,  G01R33/09 ,  G01R33/1269 ,  H01F10/3218

Abstract: Magneto-impedance (MI) sensors employing current confinement and exchange bias layer(s) for increased MI sensitivity are disclosed. MI sensors may be used as biosensors to detect biological materials. The sensing by the MI devices is based on a giant magneto-impedance (GMI) effect, which is very sensitive to a magnetic field. The GMI effect is a change in impedance of a magnetic material resulting from a change in skin depth of the magnetic material as a function of an external direct current (DC) magnetic field applied to the magnetic material and an alternating current (AC) current flowing through the magnetic material (or adjacent conductive materials). Thus, this change in impedance resulting from a magnetic stray field generated by magnetic nanoparticles can be detected in lower concentrations and measured to determine the amount of magnetic nanoparticles present, and thus the target analyte of interest.

公开(公告)号：US20180145838A1

公开(公告)日：2018-05-24

申请号：US15356112

申请日：2016-11-18

Applicant: QUALCOMM Incorporated

Inventor： Peiyuan Wang ,  Chando Park ,  Jimmy Jianan Kan ,  Seung Hyuk Kang

IPC: H04L9/32 ,  H04L9/08 ,  G06F21/72

CPC classification number: H04L9/3278 ,  G06F21/73 ,  H04L9/0866

Abstract: Exemplary features pertain to secure communications using Physical Unclonable Function (PUF) devices. Segments of a message to be encrypted are sequentially applied to a PUF device as a series of challenges to obtain a series of responses for generating a sequence of encryption keys, whereby a previous segment of the message is used to obtain a key for encrypting a subsequent segment of the message. The encrypted message is sent to a separate (receiving) device that employs a logical copy of the PUF device for decrypting the message. The logical copy of the PUF may be a lookup table or the like that maps all permissible challenges to corresponding responses for the PUF and may be generated in advance and stored in memory of the receiving device. The data to be encrypted may be further encoded to more fully exercise the PUF to enhance security. Decryption operations are also described.

公开(公告)号：US09870811B2

公开(公告)日：2018-01-16

申请号：US15185441

申请日：2016-06-17

Applicant: QUALCOMM Incorporated

Inventor： Peiyuan Wang ,  Jung Pill Kim ,  Jimmy Jianan Kan ,  Chando Park ,  Seung Kang

IPC: G11C11/16 ,  G11C17/02

CPC classification number: G11C11/1675 ,  G11C7/20 ,  G11C11/1693 ,  G11C11/1695 ,  G11C14/0081

Abstract: In a particular aspect, an apparatus includes a magnetic random access memory (MRAM) cell including a pair of cross coupled inverters including a first inverter and a second inverter. The first inverter includes a first transistor coupled to a first node and a second transistor coupled to the first node. The second inverter includes a third transistor coupled to a second node and a fourth transistor coupled to the second node. The MRAM cell includes a first magnetic tunnel junction (MTJ) element coupled to the second transistor and a second MTJ element coupled to the fourth transistor. The apparatus further includes a voltage initialization circuit coupled to the MRAM cell. The voltage initialization circuit is configured to substantially equalize voltages of the first node and the second node in response to an initialization signal.

公开(公告)号：US09728718B2

公开(公告)日：2017-08-08

申请号：US15389322

申请日：2016-12-22

Applicant: QUALCOMM Incorporated

Inventor： Vladimir Machkaoutsan ,  Matthias Georg Gottwald ,  Mustafa Badaroglu ,  Jimmy Kan ,  Kangho Lee ,  Yu Lu ,  Chando Park

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.

公开(公告)号：US20170125481A1

公开(公告)日：2017-05-04

申请号：US15137437

申请日：2016-04-25

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Jianan Kan ,  Chando Park ,  Matthias Georg Gottwald ,  Seung Hyuk Kang

IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic tunnel junction (MTJ) devices with a heterogeneous free layer structure particularly suited for efficient spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) are disclosed. In one aspect, a MTJ structure with a reduced thickness first pinned layer section provided below a first tunnel magneto-resistance (TMR) barrier layer is provided. The first pinned layer section includes one pinned layer magnetized in one magnetic orientation. In another aspect, a second pinned layer section and a second TMR barrier layer are provided above a free layer section and above the first TMR barrier layer in the MTJ. The second pinned layer is magnetized in a magnetic orientation that is anti-parallel (AP) to that of the first pinned layer section. In yet another aspect, the free layer comprises first and second heterogeneous layers separated by an anti-ferromagnetic coupling spacer, the first and second heterogeneous layers differing in their magnetic anisotropy.

公开(公告)号：US09583696B2

公开(公告)日：2017-02-28

申请号：US14460731

申请日：2014-08-15

Applicant: QUALCOMM Incorporated

Inventor： Matthias Georg Gottwald ,  Chando Park ,  Xiaochun Zhu ,  Kangho Lee ,  Seung Hyuk Kang

IPC: G11C11/16 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673

Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

Abstract translation: 一种装置包括垂直磁各向异性磁隧道结（pMTJ）装置。 pMTJ设备包括存储层和参考层。 参考层包括被配置为产生亚铁磁效应的部分。 该部分包括第一层，第二层和第三层。 第二层被配置为在pMTJ器件的操作期间反铁磁（AF）耦合第一层和第三层。

公开(公告)号：US09444035B2

公开(公告)日：2016-09-13

申请号：US14483104

申请日：2014-09-10

Applicant: QUALCOMM Incorporated

Inventor： Chando Park ,  Kangho Lee ,  Jimmy Kan ,  Matthias Georg Gottwald ,  Xiaochun Zhu ,  Seung Hyuk Kang

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.

Abstract translation: 磁性隧道结（MTJ）装置包括钉扎层，钉扎层上的隧道势垒层和隧道势垒层上的自由层。 MTJ装置还包括在自由层上的垂直磁各向异性（PMA）增强层，PMA增强层上的覆盖层以及电封闭封盖层，PMA增强层和自由层的导电路径。 制造垂直磁性隧道结（pMTJ）器件的方法包括形成覆盖层，垂直磁性各向异性（PMA）增强层和自由层。 该方法还包括形成导电层以缩短封盖层，PMA增强层和自由层。

公开(公告)号：US10381060B2

公开(公告)日：2019-08-13

申请号：US15247791

申请日：2016-08-25

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Jianan Kan ,  Chando Park ,  Peiyuan Wang ,  Sungryul Kim ,  Seung Hyuk Kang

IPC: G11C11/16 ,  H01L27/22

Abstract: A magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells may include a perpendicular magnetic tunnel junction (pMTJ) including a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer. A spin-hall conductive material layer may support the free layer. A driver may be operable to set a state of at least one of the bit cells using an increased spin-transfer torque (STT) current and a spin-hall effect from the spin-hall conductive material layer. The increased STT current may be driven through the spin-hall conductive material layer and the pMTJ so that a spin current is generated from the reference layer and the spin-hall conductive material layer.

公开(公告)号：US09721634B2

公开(公告)日：2017-08-01

申请号：US14860931

申请日：2015-09-22

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Yu Lu ,  Chando Park ,  Seung Hyuk Kang

IPC: G11C11/16 ,  H01L27/22

CPC classification number: G11C11/1659 ,  G11C11/02 ,  G11C11/161 ,  H01L27/228

Abstract: Magnetic tunnel junction (MTJ) memory bit cells that decouple source line layout from access transistor node size to facilitate reduced contact resistance are disclosed. In one example, an MTJ memory bit cell is provided that includes a source plate disposed above and in contact with a source contact for a source node of an access transistor. A source line is disposed above and in electrical contact with the source plate to electrically connect the source line to the source node. The source plate allows the source line to be provided in a higher metal level from the source and drain contacts of the access transistor such that the source line is not in physical contact with (i.e., decoupled from) the source contact. This allows pitch between the source line and drain column to be relaxed from the width of the source and drain nodes without having to increase contact resistance.

公开(公告)号：US09595666B2

公开(公告)日：2017-03-14

申请号：US15173567

申请日：2016-06-03

Applicant: QUALCOMM INCORPORATED

Inventor： Matthias Georg Gottwald ,  Jimmy Kan ,  Kangho Lee ,  Chando Park ,  Seung Hyuk Kang

IPC: H01L21/3213 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.

Abstract translation: 用于制造垂直磁性隧道结（pMTJ）器件的方法包括在pMTJ器件的第一电极上生长晶种层。 种子层沿生长轴具有均匀的预定晶体取向。 该方法还包括平面化种子层，同时保持种子层的均匀的预定晶体取向。