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    DUAL ADHESIVE BONDING WITH PERFORATED WAFER
    17.
    发明申请
    DUAL ADHESIVE BONDING WITH PERFORATED WAFER 审中-公开
    双胶粘结与执行波形

    公开(公告)号：US20150096673A1

    公开(公告)日：2015-04-09

    申请号：US14047237

    申请日：2013-10-07

    Applicant: International Business Machines Corporation

    Inventor： Jeffrey P. Gambino ,  Kenneth F. McAvey, JR. ,  Charles F. Musante ,  Anthony K. Stamper

    IPC: H01L21/673 ,  H01L21/683

    CPC classification number: H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T428/24942

    Abstract: The embodiments of the present invention relate to semiconductor device manufacturing, and more particularly, a method of temporarily bonding a semiconductor wafer to a wafer carrier with a multi-layered contact layer as well as a structure. A method is disclosed that includes: forming a first layer on a surface of a semiconductor wafer; forming a second layer on the first layer; bonding a perforated carrier to the second layer; and removing the semiconductor wafer from the perforated carrier. The first layer may be composed of an adhesive. The second layer may be composed of a material having a higher outgassing temperature than the first layer.

    Abstract translation: 本发明的实施例涉及半导体器件制造，更具体地，涉及一种将半导体晶片临时接合到具有多层接触层的晶片载体以及结构的方法。 公开了一种方法，包括：在半导体晶片的表面上形成第一层; 在第一层上形成第二层; 将穿孔的载体粘合到第二层; 以及从多孔载体上去除半导体晶片。 第一层可以由粘合剂组成。 第二层可以由具有比第一层更高的除气温度的材料构成。

    DICE BEFORE GRIND WITH BACKSIDE METAL
    18.
    发明申请
    DICE BEFORE GRIND WITH BACKSIDE METAL 有权
    在背面金属碎屑之前

    公开(公告)号：US20150001683A1

    公开(公告)日：2015-01-01

    申请号：US13928676

    申请日：2013-06-27

    Applicant: International Business Machines Corporation

    Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Charles F. Musante ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

    IPC: H01L21/78 ,  H01L29/41 ,  H01L21/283 ,  H01L29/06

    CPC classification number: H01L21/78 ,  H01L21/283

    Abstract: A method including forming a plurality of dicing channels in a front side of a wafer; the plurality of dicing channels including a depth at least greater than a desired final thickness of the wafer, filling the plurality of dicing channels with a fill material and removing a portion of the wafer from a back side of the wafer until the desired final thickness is achieved, where a portion of the fill material within the plurality of dicing channel is exposed. The method further including depositing a metal layer on the back side of the wafer; removing the fill material from within the plurality of dicing channels to expose the metal layer at a bottom of the plurality of dicing channels, and removing a portion of the metal layer located at the bottom of the plurality of dicing channels.

    Abstract translation: 一种包括在晶片的前侧形成多个切割通道的方法; 多个切割通道包括至少大于晶片的期望最终厚度的深度，用填充材料填充多个切割通道，并从晶片的背面去除晶片的一部分，直到期望的最终厚度为 其中多个切割通道内的填充材料的一部分被暴露。 该方法还包括在晶片的背面沉积金属层; 从所述多个切割通道内移除所述填充材料以暴露所述多个切割通道的底部处的所述金属层，以及去除位于所述多个切割通道的底部的所述金属层的一部分。

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