公开(公告)号：US08912091B2

公开(公告)日：2014-12-16

申请号：US13738541

申请日：2013-01-10

Applicant: International Business Machines Corporation

Inventor： Jay S. Burnham ,  Damyon L. Corbin ,  George A. Dunbar, III ,  Jeffrey P. Gambino ,  John C. Hall ,  Kenneth F. McAvey, Jr. ,  Charles F. Musante ,  Anthony K. Stamper

IPC: H01L21/4763 ,  H01L29/40 ,  H01L23/498 ,  H01L21/768 ,  G06F17/50

CPC classification number: H01L23/49827 ,  G06F17/50 ,  H01L23/481 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/03

Abstract: A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.

Abstract translation: 本文公开了具有改善的金属附着力的背面金属接地层和制造方法。 该方法包括在衬底中形成至少一个穿硅通孔（TSV）。 该方法还包括在衬底的背面形成氧化物层。 所述方法还包括在所述氧化物层上形成金属化的接地平面并与所述至少一个TSV的暴露部分电接触。