公开(公告)号：US20230253248A1

公开(公告)日：2023-08-10

申请号：US18119080

申请日：2023-03-08

申请人： Applied Materials, Inc.

发明人： Yang Zhou ,  Yong Jin Kim ,  Ge Qu ,  Zhiyuan Wu ,  Carmen Leal Cervantes ,  Feng Chen ,  Kevin Kashefi ,  Bhaskar Jyoti Bhuyan ,  Drew Phillips ,  Aaron Dangerfield

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76844 ,  H01L21/76846 ,  H01L23/5226 ,  H01L21/28568

摘要： Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C≡C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R′C═CR″, wherein R′ and R″ independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US20240355675A1

公开(公告)日：2024-10-24

申请号：US18630177

申请日：2024-04-09

申请人： Applied Materials, Inc.

发明人： Muthukumar Kaliappan ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Bhaskar Jyoti Bhuyan ,  Xiangjin Xie ,  Michael Haverty ,  Kevin Kashefi ,  Mark Saly ,  Aaron Dangerfield ,  Jesus Candelario Mendoza-Gutierrez

IPC分类号： H01L21/768

CPC分类号： H01L21/76846 ,  H01L21/76879

摘要： Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule, such as a boron-containing compound, to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

公开(公告)号：US20240258164A1

公开(公告)日：2024-08-01

申请号：US18418786

申请日：2024-01-22

申请人： Applied Materials, Inc.

发明人： Jiajie Cen ,  Carmen Leal Cervantes ,  Yong Jin Kim ,  Kevin Kashefi ,  Xiaodong Wang

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76844 ,  H01L21/02063

摘要： Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A pre-clean process is performed before a self-assembled monolayer (SAM) is formed on the bottom of the gap. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after selectively depositing the barrier layer on the sidewalls.

公开(公告)号：US11955382B2

公开(公告)日：2024-04-09

申请号：US17110818

申请日：2020-12-03

申请人： Applied Materials, Inc.

发明人： Kevin Kashefi ,  Alexander Jansen ,  Mehul Naik ,  He Ren ,  Lu Chen ,  Feng Chen

IPC分类号： H01L21/76 ,  H01L21/67 ,  H01L21/768 ,  H01L21/687

CPC分类号： H01L21/76885 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76829 ,  H01L21/76883 ,  H01L21/68707

摘要： Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.

公开(公告)号：US11952655B2

公开(公告)日：2024-04-09

申请号：US17737361

申请日：2022-05-05

申请人： Applied Materials, Inc.

发明人： Kevin Kashefi ,  Xiaodong Wang ,  Suhas Bangalore Umesh ,  Zheng Ju ,  Jiajie Cen

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35

CPC分类号： C23C14/351 ,  C23C14/345 ,  C23C14/3485 ,  H01J37/3405 ,  H01J37/3458 ,  H01J37/3467

摘要： Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.

公开(公告)号：US20230126055A1

公开(公告)日：2023-04-27

申请号：US17971217

申请日：2022-10-21

申请人： Applied Materials, Inc.

发明人： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC分类号： H01L21/768 ,  H01L21/02 ,  B05D1/00

摘要： Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20220270871A1

公开(公告)日：2022-08-25

申请号：US17742712

申请日：2022-05-12

申请人： Applied Materials, Inc.

发明人： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/768

摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US20240332075A1

公开(公告)日：2024-10-03

申请号：US18613918

申请日：2024-03-22

申请人： Applied Materials, Inc.

发明人： Jiajie Cen ,  Kevin Kashefi ,  Zhiyuan Wu ,  Yang Zhou ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Ge Qu ,  Zheng Ju

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/76846 ,  H01L23/5226 ,  H01L21/76882 ,  H01L23/53209 ,  H01L23/53238

摘要： Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a first self-assembled monolayer (SAM) on the bottom of the gap; forming a barrier layer on the dielectric layer; selectively depositing a second self-assembled monolayer (SAM) on the barrier layer and on the bottom of the gap; treating the microelectronic device with a plasma to remove a first portion of the second self-assembled monolayer (SAM); selectively depositing a metal liner on the barrier layer on the sidewall; removing a second portion of the second self-assembled monolayer (SAM); and performing a gap fill process on the metal liner.

公开(公告)号：US20240258103A1

公开(公告)日：2024-08-01

申请号：US18422656

申请日：2024-01-25

申请人： Applied Materials, Inc.

发明人： Jiajie Cen ,  Ge Qu ,  Shinjae Hwang ,  Zheng Ju ,  Yang Zhou ,  Zhiyuan Wu ,  Feng Chen ,  Kevin Kashefi

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L21/02274 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

摘要： Embodiments of the disclosure relate to methods for forming electrical interconnects. Additional embodiments provide methods of forming and treating barrier and liner layers to improve film and material properties. In some embodiments, the resulting composite layers provide improved resistivity, decrease void formation and improve device reliability.

公开(公告)号：US11776806B2

公开(公告)日：2023-10-03

申请号：US17742712

申请日：2022-05-12

申请人： Applied Materials, Inc.

发明人： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/768

CPC分类号： H01L21/02063 ,  H01L21/0234 ,  H01L21/02244 ,  H01L21/02334 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76879

摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.