公开(公告)号：US20230193466A1

公开(公告)日：2023-06-22

申请号：US18108989

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward W. BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/52 ,  G01B11/0683 ,  H01L21/687 ,  H01L21/67248 ,  H01L21/67253 ,  C23C16/5096 ,  G01N21/55 ,  G01N21/658 ,  G01B11/0625 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/509 ,  G01N2201/1222

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20200286716A1

公开(公告)日：2020-09-10

申请号：US16803479

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN ,  Vivek Bharat SHAH ,  Jiheng ZHAO

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/458

Abstract: The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

公开(公告)号：US20200234982A1

公开(公告)日：2020-07-23

申请号：US16838128

申请日：2020-04-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi BASU ,  Jeongmin LEE ,  Paul CONNORS ,  Dale R. DU BOIS ,  Prashant Kumar KULSHRESHTHA ,  Karthik Thimmavajjula NARASIMHA ,  Brett BERENS ,  Kalyanjit GHOSH ,  Jianhua ZHOU ,  Ganesh BALASUBRAMANIAN ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ ,  Hiroyuki OGISO ,  Liliya KRIVULINA ,  Rick GILBERT ,  Mohsin WAQAR ,  Venkatanarayana SHANKARAMURTHY ,  Hari K. PONNEKANTI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20190382889A1

公开(公告)日：2019-12-19

申请号：US16422793

申请日：2019-05-24

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra PARIMI ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Vivek Bharat SHAH ,  Shailendra SRIVASTAVA ,  Amit Kumar BANSAL ,  Xinhai HAN ,  Vinay K. PRABHAKAR

IPC: C23C16/44 ,  H01J37/32

Abstract: Implementations of the present disclosure generally provide improved methods for cleaning a vacuum chamber to remove adsorbed contaminants therefrom prior to a chamber seasoning process while maintaining the chamber at desired deposition processing temperatures. The contaminants may be formed from the reaction of cleaning gases with the chamber components and the walls of the vacuum chamber.

公开(公告)号：US20180204750A1

公开(公告)日：2018-07-19

申请号：US15873971

申请日：2018-01-18

Applicant: Applied Materials, Inc.

Inventor： Sidharth BHATIA ,  Edward P. HAMMOND, IV ,  Bhaskar KUMAR ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  G06T7/00

CPC classification number: H01L21/67253 ,  G06T7/0004 ,  H01J37/321 ,  H01J37/32981 ,  H01J2237/334 ,  H01L21/3065

Abstract: Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

公开(公告)号：US20170016118A1

公开(公告)日：2017-01-19

申请号：US15278455

申请日：2016-09-28

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  C23C16/46 ,  H01L21/687 ,  C23C16/458 ,  G01B11/06 ,  H01L21/67 ,  C23C16/455 ,  C23C16/509

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract translation: 描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。

公开(公告)号：US20160307752A1

公开(公告)日：2016-10-20

申请号：US15192732

申请日：2016-06-24

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Sudha RATHI ,  Praket P. JHA ,  Saptarshi BASU ,  Kwangduk Douglas LEE ,  Martin J. SEAMONS ,  Bok Hoen KIM ,  Ganesh BALASUBRAMANIAN ,  Ziqing DUAN ,  Lei JING ,  Mandar B. PANDIT

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/04 ,  C23C16/458 ,  C23C16/46 ,  H01L21/66 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US20160064264A1

公开(公告)日：2016-03-03

申请号：US14469573

申请日：2014-08-26

Applicant: Applied Materials, Inc.

Inventor： Prashant KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM ,  Zheng John YE ,  Swayambhu Prasad BEHERA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Jian J. CHEN

IPC: H01L21/683 ,  H01L21/02

CPC classification number: H01L21/6833

Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.

Abstract translation: 公开了用于增加击穿电压的方法和装置的技术，同时在处理室中超过约300摄氏度的温度下显着降低静电卡盘的电压泄漏。

公开(公告)号：US20150136325A1

公开(公告)日：2015-05-21

申请号：US14539914

申请日：2014-11-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Ganesh BALASUBRAMANIAN ,  Thuy BRICHER ,  Jay D. PINSON, II ,  Hiroji HANAWA ,  Juan Carlos ROCHA-ALVAREZ ,  Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Bok Hoen KIM ,  Sungwon HA

IPC: H01J37/32 ,  C23C16/513 ,  C23C16/509 ,  H01L21/67

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract translation: 用于修改沉积在等离子体处理室中的薄膜的均匀性图案的系统包括耦合到等离子体处理室的放电电极上的多个点的单个射频（RF）电源。 选择多个耦合点的定位，多个耦合点之间的功率分布或两者的组合以至少部分地补偿由腔室产生的薄膜的一致的不均匀图案。 多个耦合点之间的功率分布可以由在多个耦合点中的每个耦合点处施加的RF功率之间的适当的RF相位差产生。

公开(公告)号：US20140083523A1

公开(公告)日：2014-03-27

申请号：US14036170

申请日：2013-09-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Juan Carlos ROCHA-ALVAREZ ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN

IPC: F16L53/00

CPC classification number: C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  F27D7/02 ,  F27D7/06 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/3321 ,  Y10T137/6416

Abstract: A processing chamber is described having a gas evacuation flow path from the center to the edge of the chamber. Purge gas is introduced at an opening around a support shaft that supports a heater plate. A shaft wall around the opening directs the purge gas along the support shaft to an evacuation plenum. Gas flows from the evacuation plenum through an opening in a second plate near the shaft wall and along the chamber bottom to an opening coupled to a vacuum source. Purge gas is also directed to the slit valve.

Abstract translation: 描述了具有从腔室的中心到边缘的气体排出流动路径的处理室。 吹扫气体被引入支撑加热板的支撑轴周围的开口处。 围绕开口的轴壁将吹扫气体沿支撑轴引导到排气室。 气体从排气室经过位于轴壁附近的第二板的开口并且沿着室底部流到耦合到真空源的开口。 吹扫气体也被引导到狭缝阀。