公开(公告)号：US20220344135A1

公开(公告)日：2022-10-27

申请号：US17242059

申请日：2021-04-27

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Lin ZHANG ,  Jiyong HUANG ,  Jang Seok OH ,  Joseph C. WERNER ,  Nitin KHURANA ,  Ganesh BALASUBRAMANIAN ,  Jennifer Y. SUN ,  Xinhai HAN ,  Zhijun JIANG

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/44

Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

公开(公告)号：US20220064797A1

公开(公告)日：2022-03-03

申请号：US17403056

申请日：2021-08-16

Applicant: Applied Materials, Inc.

Inventor： Akshay DHANAKSHIRUR ,  Juan Carlos ROCHA-ALVAREZ ,  Kaushik Comandoor ALAYAVALLI ,  Jay D. PINSON, II ,  Rick KUSTRA ,  Badri N. RAMAMURTHI ,  Anup Kumar SINGH ,  Ganesh BALASUBRAMANIAN ,  Bhaskar KUMAR ,  Vinayak Vishwanath HASSAN ,  Canfeng LAI ,  Kallol BERA ,  Sathya Swaroop GANTA

IPC: C23C16/455 ,  H01J37/32

Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.

公开(公告)号：US20200227258A1

公开(公告)日：2020-07-16

申请号：US16597466

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Arkajit ROY BARMAN ,  Hidehiro KOJIRI ,  Xinhai HAN ,  Deenesh PADHI ,  Chuan Ying WANG ,  Yue CHEN ,  Daemian Raj BENJAMIN RAJ ,  Nikhil Sudhindrarao JORAPUR ,  Vu Ngoc Tran NGUYEN ,  Miguel S. FUNG ,  Jose Angelo OLAVE ,  Thian Choi LIM

IPC: H01L21/02 ,  H01L21/67

Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

公开(公告)号：US20200098547A1

公开(公告)日：2020-03-26

申请号：US16583003

申请日：2019-09-25

Applicant: Applied Materials, Inc.

Inventor： Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kalyanjit GHOSH ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44

Abstract: Systems and methods for a process chamber that decreases the severity and occurrence of substrate defects due to loosened scale is discussed herein. A gas distribution assembly is disposed in a process chamber and includes a faceplate with a plurality of apertures formed therethrough and a second member. The faceplate is coupled to the second member which is configured to couple to the faceplate to reduce an exposed area of the faceplate and minimize an available area for material buildup during the release of gas into the process chamber. The second member is further configured to improve the glow of precursors into the process chamber. The gas distribution assembly can be heated before and during process chamber operations, and can remain heated between process chamber operations.

公开(公告)号：US20190355609A1

公开(公告)日：2019-11-21

申请号：US16440513

申请日：2019-06-13

Applicant: Applied Materials, Inc.

Inventor： Prashant KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM ,  Zheng John YE ,  Swayambhu Prasad BEHERA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Jian J. CHEN

IPC: H01L21/683

Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.

公开(公告)号：US20190153592A1

公开(公告)日：2019-05-23

申请号：US16259011

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Dale Du BOIS ,  Mohamad A. AYOUB ,  Robert KIM ,  Amit Kumar BANSAL ,  Mark FODOR ,  Binh NGUYEN ,  Siu F. CHENG ,  Hang YU ,  Chiu CHAN ,  Ganesh BALASUBRAMANIAN ,  Deenesh PADHI ,  Juan Carlos ROCHA

IPC: C23C16/04 ,  C23C16/458 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C14/04 ,  H01L21/687 ,  C30B25/12 ,  H01J37/34

Abstract: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

公开(公告)号：US20190080916A1

公开(公告)日：2019-03-14

申请号：US16189104

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos ROCHA-ALVAREZ ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Mohamad A. AYOUB ,  Jian J. CHEN

IPC: H01L21/30 ,  H01J37/32

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

公开(公告)号：US20180294139A1

公开(公告)日：2018-10-11

申请号：US15945413

申请日：2018-04-04

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Sidharth BHATIA ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  C23C16/52

Abstract: The present disclosure relates to methods and apparatus for reducing particle contamination on substrates in a plasma process chamber. In one embodiment, by applying a DC power to an electrode surrounding a processing region, the boundary of a plasma region formed in the processing region extends closer to the chamber body and outside of the diameter of the substrate support. In another embodiment, by applying a negative bias to an electrode or a positive bias to the lid, negatively charged species located at the boundary of the plasma region are lifted by the electrostatic force created by the negative bias or the positive bias. As a result, species located at the boundary of the plasma region will not fall onto the edge of the substrate disposed on the substrate support as the electric power for sustaining the plasma region is turned off, leading to reduced particle contamination on the substrate.

公开(公告)号：US20160084400A1

公开(公告)日：2016-03-24

申请号：US14932384

申请日：2015-11-04

Applicant: Applied Materials, Inc.

Inventor： Ramprakash SANKARAKRISHNAN ,  Dale R. DU BOIS ,  Ganesh BALASUBRAMANIAN ,  Karthik JANAKIRAMAN ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Visweswaren SIVARAMAKRISHNAN ,  Hichem M'SAAD

IPC: F16K31/06 ,  F16K1/22

CPC classification number: F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

公开(公告)号：US20140087489A1

公开(公告)日：2014-03-27

申请号：US14033947

申请日：2013-09-23

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos ROCHA-ALVAREZ ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Mohamad A. AYOUB ,  Jian J. CHEN

IPC: H01L21/30

CPC classification number: H01L21/30 ,  H01J37/32091 ,  H01J37/32532

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

Abstract translation: 提供了一种用于等离子体处理衬底的装置。 该装置包括处理室，设置在处理室中的基板支撑件和联接到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器。 调谐电极可以设置在导电气体分配器和腔体之间，用于调节等离子体的接地路径。 第二调谐电极可以耦合到衬底支撑件，并且偏置电极也可以耦合到衬底支撑件。