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1.发明申请公开(公告)号：US20210319983A1
公开(公告)日：2021-10-14
申请号：US16846295
申请日：2020-04-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Pingyan LEI , Dien-Yeh WU , Xiao Ming HE , Jennifer Y. SUN , Lei ZHOU , Takashi KURATOMI , Avgerinos V. GELATOS , Mei CHANG , Steven D. MARCUS
IPC: H01J37/32 , H01L21/67 , C23C16/06 , C23C16/44 , C23C16/455
Abstract: Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.
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2.发明申请公开(公告)号：US20220344135A1
公开(公告)日：2022-10-27
申请号：US17242059
申请日：2021-04-27
Applicant: Applied Materials, Inc.
Inventor： Shuran SHENG , Lin ZHANG , Jiyong HUANG , Jang Seok OH , Joseph C. WERNER , Nitin KHURANA , Ganesh BALASUBRAMANIAN , Jennifer Y. SUN , Xinhai HAN , Zhijun JIANG
Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.
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公开(公告)号：US20220139679A1
公开(公告)日：2022-05-05
申请号：US17088407
申请日：2020-11-03
Applicant: Applied Materials, Inc.
Inventor： Job George KONNOTH JOSEPH , Sathya Swaroop GANTA , Kallol BERA , Andrew NGUYEN , Jay D. PINSON, II , Akshay DHANAKSHIRUR , Kaushik Comandoor ALAYAVALLI , Canfeng LAI , Ren-Guan DUAN , Jennifer Y. SUN , Anil Kumar KALAL , Abhishek PANDEY
Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.
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公开(公告)号：US20160163577A1
公开(公告)日：2016-06-09
申请号：US15043179
申请日：2016-02-12
Applicant: Applied Materials, Inc.
Inventor： Konstantin MAKHRATCHEV , Jennifer Y. SUN
IPC: H01L21/683 , H01R43/16
CPC classification number: H01L21/6833 , B23K10/00 , H01L21/67103 , H01R43/16 , Y10T29/49204
Abstract: Embodiments of the invention generally relate to an electrostatic chuck having reduced power loss, and methods and apparatus for reducing power loss in an electrostatic chuck, as well as methods for testing and manufacture thereof. In one embodiment, an electrostatic chuck is provided. The electrostatic chuck includes a conductive base, and a ceramic body disposed on the conductive base, the ceramic body comprising an electrode and one or more heating elements embedded therein, wherein the ceramic body comprises a dissipation factor of about 0.11 to about 0.16 and a capacitance of about 750 picoFarads to about 950 picoFarads between the electrode and the one or more heating elements.
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Patent Agency Ranking
公开(公告)号：US20200238303A1
公开(公告)日：2020-07-30
申请号：US16846000
申请日：2020-04-10
Applicant: APPLIED MATERIALS, INC.
Inventor： Dmitry LUBOMIRSKY , Vladimir KNYAZIK , Hamid NOORBAKHSH , Jason DELLA ROSA , Zheng John YE , Jennifer Y. SUN , Sumanth BANDA
IPC: B05B1/00 , H01J37/32 , B05B1/18 , C23C16/455
Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.
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公开(公告)号：US20160002811A1
公开(公告)日：2016-01-07
申请号：US14762151
申请日：2014-03-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Jennifer Y. SUN , Sumanth BANDA
CPC classification number: C25D11/04 , C25D3/54 , C25D5/48 , C25D11/024 , C25D17/001
Abstract: To manufacture a chamber component for a processing chamber, an aluminum coating is formed on an article comprising impurities, the aluminum coating being substantially free from impurities.
Abstract translation: 为了制造用于处理室的室部件，在包含杂质的制品上形成铝涂层，铝涂层基本上不含杂质。
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公开(公告)号：US20200283897A1
公开(公告)日：2020-09-10
申请号：US16800310
申请日：2020-02-25
Applicant: Applied Materials, Inc.
Inventor： Nitin DEEPAK , Suresh Chand SETH , Prerna Sonthalia GORADIA , Geetika BAJAJ , Darshan THAKARE , Jennifer Y. SUN , Gayatri NATU
IPC: C23C16/455 , C23C16/08 , C23C16/40 , C23C22/34
Abstract: Embodiments described herein provide a method of forming amorphous a fluorinated metal film. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.
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公开(公告)号：US20190135704A1
公开(公告)日：2019-05-09
申请号：US15807508
申请日：2017-11-08
Applicant: APPLIED Materials, Inc.
Inventor： Kaushal GANGAKHEDKAR , Jennifer Y. SUN , Xiao-Ming HE
IPC: C04B35/64 , C04B35/622 , H01J37/32
CPC classification number: C04B35/64 , C04B35/50 , C04B35/505 , C04B35/62222 , C04B41/009 , C04B41/5031 , C04B41/5032 , C04B41/5042 , C04B41/5045 , C04B41/5055 , C04B41/87 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3418 , C04B2235/445 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , H01J37/32467 , H01J37/32495 , C04B35/00 , C04B35/10 , C04B35/581 , C04B35/44 , C04B41/0072 , C04B41/4527
Abstract: Methods comprise performing two or more thermal cycles on an article comprising a body and a ceramic coating. Each thermal cycle of the two or more thermal cycles comprise heating the ceramic article to a target temperature at a first ramping rate. Each thermal cycle further comprises maintaining the article at the target temperature for a first duration of time and then cooling the article to a second target temperature at a second ramping rate. The method further comprises submerging the article in a bath for a second duration of time to remove the particles from the ceramic coating.
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公开(公告)号：US20150183187A1
公开(公告)日：2015-07-02
申请号：US14657875
申请日：2015-03-13
Applicant: Applied Materials, Inc.
Inventor： Xing LIN , Jennifer Y. SUN , Sumanth BANDA
CPC classification number: B32B7/12 , B32B3/04 , B32B3/08 , H01L21/6833 , Y10T428/23 , Y10T428/239 , Y10T428/31504
Abstract: Embodiments of the present invention provide chamber components having a protective element for shielding bonding material from processing environments in a processing environment. The protective element may include protective seals, protective structures, erosion resistive filers, or combinations thereof. Embodiments of the present invention reduce erosion of bonding material used in a processing chamber, thus, improving processing quality and reducing maintenance costs.
Abstract translation: 本发明的实施例提供了具有用于在处理环境中将结合材料从处理环境中遮蔽的保护元件的腔室部件。 保护元件可以包括保护性密封件，保护结构，冲蚀阻性封装件或其组合。 本发明的实施例减少了处理室中使用的接合材料的侵蚀，从而提高了加工质量并降低了维护成本。
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