公开(公告)号：US20210025058A1

公开(公告)日：2021-01-28

申请号：US17041403

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Shishi JIANG ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Suresh Chand SETH ,  Srinivas D. NEMANI

IPC: C23C16/505 ,  H01L21/3205 ,  H01L21/321 ,  H01J37/32 ,  C23C16/24 ,  C23C16/56

Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process. The FCVD process includes positioning the substrate on the substrate support, flowing a processing gas into the processing volume, forming a deposition plasma of the processing gas, exposing the surface of the substrate to the deposition plasma, and depositing the amorphous silicon layer on the surface of the substrate.

公开(公告)号：US20200283897A1

公开(公告)日：2020-09-10

申请号：US16800310

申请日：2020-02-25

Applicant: Applied Materials, Inc.

Inventor： Nitin DEEPAK ,  Suresh Chand SETH ,  Prerna Sonthalia GORADIA ,  Geetika BAJAJ ,  Darshan THAKARE ,  Jennifer Y. SUN ,  Gayatri NATU

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/40 ,  C23C22/34

Abstract: Embodiments described herein provide a method of forming amorphous a fluorinated metal film. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.

公开(公告)号：US20240016060A1

公开(公告)日：2024-01-11

申请号：US18218409

申请日：2023-07-05

Applicant: Applied Materials, Inc.

Inventor： Vijay Bhan SHARMA ,  Nilesh PATIL ,  Bharatwaj RAMAKRISHNAN ,  Suresh Chand SETH ,  Abhijeet Laxman SANGLE

IPC: H10N30/076 ,  H10N30/853 ,  H10N30/06

CPC classification number: H10N30/076 ,  H10N30/8554 ,  H10N30/06

Abstract: Examples disclosed herein relate to piezoelectric devices and methods of patterning piezoelectric layers for piezoelectric device fabrication. In certain embodiments, a piezoelectric layer disposed over a bottom electrode layer on a substrate is selectively etched via a laser etching process to expose portions of the bottom electrode layer. The laser etching process of the piezoelectric layer facilitates improvement of throughput and reduces hazardous byproduct production during fabrication of piezoelectric devices.

公开(公告)号：US20220213590A1

公开(公告)日：2022-07-07

申请号：US17194956

申请日：2021-03-08

Applicant: Applied Materials, Inc.

Inventor： Uday PAI ,  Yuan XUE ,  Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Suresh Chand SETH ,  Bharatwaj Ramakrishnan ,  Soundarrajan JEMBULINGAM ,  Naveen CHANNARAYAPATNA PUTTANNA ,  Ankur KADAM ,  Yi YANG

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.

公开(公告)号：US20190119810A1

公开(公告)日：2019-04-25

申请号：US16137797

申请日：2018-09-21

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao ARNEPALLI ,  Colin Costano NEIKIRK ,  Yuriy MELNIK ,  Suresh Chand SETH ,  Pravin K. NARWANKAR ,  Sukti CHATTERJEE ,  Lance A. SCUDDER

IPC: C23C16/02 ,  C23C16/455 ,  C23C16/50

Abstract: Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications are disclosed. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands in vapor phase to volatize the native oxide layer and then thermally desorbing or otherwise etching the volatized native oxide layer. In another aspect, a method includes depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes both removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands and depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate.