公开(公告)号：US20220213590A1

公开(公告)日：2022-07-07

申请号：US17194956

申请日：2021-03-08

Applicant: Applied Materials, Inc.

Inventor： Uday PAI ,  Yuan XUE ,  Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Suresh Chand SETH ,  Bharatwaj Ramakrishnan ,  Soundarrajan JEMBULINGAM ,  Naveen CHANNARAYAPATNA PUTTANNA ,  Ankur KADAM ,  Yi YANG

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.