公开(公告)号：US20230123089A1

公开(公告)日：2023-04-20

申请号：US18083173

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Daemian Raj Benjamin RAJ ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Gregory Eugene CHICHKANOFF ,  Xinhai HAN ,  Masaki OGATA ,  Kristopher ENSLOW ,  Wenjiao WANG

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20190122872A1

公开(公告)日：2019-04-25

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Mayur G. KULKARNI ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ALVIN ZHOU ,  Amit Kumar BANSAL ,  Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US20250006487A1

公开(公告)日：2025-01-02

申请号：US18882099

申请日：2024-09-11

Applicant: Applied Materials, Inc.

Inventor： Daemian Raj BENJAMIN RAJ ,  Gregory Eugene CHICHKANOFF ,  Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Abhigyan KESHRI ,  Allison YAU

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H10B41/20 ,  H10B43/20

Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

公开(公告)号：US20190382889A1

公开(公告)日：2019-12-19

申请号：US16422793

申请日：2019-05-24

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra PARIMI ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Vivek Bharat SHAH ,  Shailendra SRIVASTAVA ,  Amit Kumar BANSAL ,  Xinhai HAN ,  Vinay K. PRABHAKAR

IPC: C23C16/44 ,  H01J37/32

Abstract: Implementations of the present disclosure generally provide improved methods for cleaning a vacuum chamber to remove adsorbed contaminants therefrom prior to a chamber seasoning process while maintaining the chamber at desired deposition processing temperatures. The contaminants may be formed from the reaction of cleaning gases with the chamber components and the walls of the vacuum chamber.

公开(公告)号：US20230420245A1

公开(公告)日：2023-12-28

申请号：US18464805

申请日：2023-09-11

Applicant: Applied Materials, Inc.

Inventor： Daemian Raj BENJAMIN RAJ ,  Gregory Eugene CHICHKANOFF ,  Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Abhigyan KESHRI ,  Allison YAU

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01L21/022 ,  C23C16/45536 ,  C23C16/50 ,  C23C16/45565 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  C23C16/4583 ,  H01J37/32449 ,  H01J37/3244 ,  H10B41/20

Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

公开(公告)号：US20200251311A1

公开(公告)日：2020-08-06

申请号：US16855126

申请日：2020-04-22

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

IPC: H01J37/32 ,  H01L21/67

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US20200173022A1

公开(公告)日：2020-06-04

申请号：US16678996

申请日：2019-11-08

Applicant: Applied Materials, Inc.

Inventor： Xinhai HAN ,  Deenesh PADHI ,  Daemian Raj BENJAMIN RAJ ,  Kristopher ENSLOW ,  Wenjiao WANG ,  Masaki OGATA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Gregory Eugene CHICHKANOFF ,  Shailendra SRIVASTAVA ,  Jonghoon BAEK ,  Zakaria IBRAHIMI ,  Juan Carlos ROCHA-ALVAREZ ,  Tza-Jing GUNG

IPC: C23C16/455 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  C23C16/40 ,  C23C16/34 ,  H01J37/32

Abstract: Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

公开(公告)号：US20190338420A1

公开(公告)日：2019-11-07

申请号：US16374824

申请日：2019-04-04

Applicant: Applied Materials, Inc.

Inventor： Shailendra SRIVASTAVA

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/50 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments described herein relate to a pressure skew system for controlling the center-to-edge pressure change in a chamber for depositing an advanced patterning film with improved overall uniformity. The pressure skew system includes pumping zones configured to be formed in a chamber, walls disposed in the pumping region. The chamber includes a processing region, a pumping region, and a pumping path connected to a pump to exhaust process gases from the pumping region. Each pumping zone corresponds to a space of the pumping region flanked by the walls. Supply conduits are connected to a corresponding pumping zone and a corresponding mass flow control device to control a flow rate of inert gas provided to the corresponding pumping zone to control a pressure in an area of the processing region.

公开(公告)号：US20190080889A1

公开(公告)日：2019-03-14

申请号：US15701222

申请日：2017-09-11

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

IPC: H01J37/32 ,  H01L21/67

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US20240044000A1

公开(公告)日：2024-02-08

申请号：US18381534

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Daemian Raj BENJAMIN RAJ ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Gregory Eugene CHICHKANOFF ,  Xinhai HAN ,  Masaki OGATA ,  Kristopher ENSLOW ,  Wenjiao WANG

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

CPC classification number: C23C16/45565 ,  H01J37/32458 ,  H01J37/3244 ,  C23C16/50 ,  C23C16/45536 ,  C23C16/4583 ,  H01J2237/3321

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.