公开(公告)号：US09543110B2

公开(公告)日：2017-01-10

申请号：US14135754

申请日：2013-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01J27/20 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/0268 ,  H01J2237/082 ,  H01J2237/31705

Abstract: An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon.

Abstract translation: 用于离子注入系统的离子源室包括壳体，该壳体至少部分地界定电离区域，高能电子通过该电离区域从阴极移动到电离注入壳体内部的气体分子; 限定所述壳体内部的一个或多个内壁的衬里部分，其中每个衬里部分包括在所述离子注入系统的操作期间暴露于所述电离区域的面向内的表面; 围绕阴极设置的阴极屏蔽; 与阴极间隔开的推斥器; 包括用于从离子源室排出离子的源孔的板; 其中所述推斥板，所述衬套部分，所述阴极罩中的至少一个; 该板或限定源孔的板中的插入物包括碳化硅，其中碳化硅是具有过量碳的非化学计量烧结材料。

公开(公告)号：US09455116B2

公开(公告)日：2016-09-27

申请号：US14692395

申请日：2015-04-21

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  William Bintz

IPC: H01J37/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/317

CPC classification number: H01J37/1474 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/1506 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31701 ,  H01J2237/31708

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract translation: 提供离子注入系统和方法，用于与扫描的离子束同时冲击工件，改变扫描离子束相对于工件的入射角。 该系统具有构造成形成离子束的离子源和被配置为质量分析离子束的质量分析器。 离子束扫描器被配置成沿着第一方向扫描离子束，其中限定扫描的离子束。 工件支撑件构造成在其上支撑工件，并且角度注入装置被配置为改变扫描离子束相对于工件的入射角。 角植入装置包括角度能量过滤器和可操作地耦合到工件支撑件的机械装置中的一个或多个，其中控制器控制角度注入装置，从而改变扫描离子束相对于工件的入射角度，同时与 扫描的离子束撞击工件。

公开(公告)号：US20160189926A1

公开(公告)日：2016-06-30

申请号：US14978120

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Andy M. Ray ,  Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.

Abstract translation: 提供离子注入系统和方法，其中离子束被调谐到第一处理配方。 沿着扫描平面以第一频率扫描离子束，限定第一扫描离子束。 光束成像设备通过第一扫描离子束平移，并且跨越第一扫描离子的宽度测量第一扫描离子束的一个或多个特性，从而限定与第一扫描离子束相关联的第一光束轮廓。 然后以第二频率扫描离子束，从而限定第二扫描离子束，其中第二频率小于第一频率。 至少部分地基于第一光束轮廓确定与第二扫描离子束相关联的第二光束轮廓。 随后通过第二扫描离子束将离子植入工件。

公开(公告)号：US20160189912A1

公开(公告)日：2016-06-30

申请号：US14978089

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/12 ,  H01J37/20 ,  H01J37/05 ,  H01J37/30 ,  H01J37/147

CPC classification number: H01J37/12 ,  H01J37/05 ,  H01J37/1472 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3171 ,  H01J2237/31705

Abstract: A system and method are provided for implanting ions at low energies into a workpiece. An ion source configured to generate an ion beam is provided, wherein a mass resolving magnet is configured to mass resolve the ion beam. The ion beam may be a ribbon beam or a scanned spot ion beam. A mass resolving aperture positioned downstream of the mass resolving magnet filters undesirable species from the ion beam. A combined electrostatic lens system is positioned downstream of the mass analyzer, wherein a path of the ion beam is deflected and contaminants are generally filtered out of the ion beam, while concurrently decelerating and parallelizing the ion beam. A workpiece scanning system is further positioned downstream of the combined electrostatic lens system, and is configured to selectively translate a workpiece in one or more directions through the ion beam, therein implanting ions into the workpiece.

Abstract translation: 提供了一种用于将低能量离子注入工件的系统和方法。 提供了一种被配置为产生离子束的离子源，其中质量分辨磁体构造成质量分辨离子束。 离子束可以是带状束或扫描的点离子束。 位于质量分辨磁体下游的质量分辨孔径从离子束过滤不期望的物质。 组合的静电透镜系统位于质量分析器的下游，其中离子束的路径被偏转并且污染物通常从离子束过滤掉，同时使离子束同时减速和平行化。 工件扫描系统还位于组合的静电透镜系统的下游，并且被配置为在一个或多个方向上选择性地平移通过离子束的工件，其中将离子注入到工件中。

公开(公告)号：US20150228515A1

公开(公告)日：2015-08-13

申请号：US14178795

申请日：2014-02-12

Applicant: Axcelis Technologies, Inc.

Inventor： William Davis Lee

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67109 ,  F28D1/06 ,  F28D2021/0029 ,  H01L21/6831 ,  H01L23/40 ,  H01L23/46

Abstract: A workpiece support has a vessel having a top interior wall and a bottom interior wall. An interior cavity is defined between the top interior wall and bottom interior wall, wherein a support surface configured to support a workpiece. A plate is positioned within the interior cavity, dividing the interior cavity into a top cavity and a bottom cavity. The top and bottom cavities are fluidly coupled about a periphery of the plate. A first taper defined in one or more of the top interior wall and a top portion of the plate provides a substantially constant volume across a radial cross-section of the top cavity. A second taper defined in one or more of the bottom interior wall and a bottom portion of the plate provides a substantially constant volume across a radial cross-section of the bottom cavity. First and second ports fluidly couple the top and bottom cavities to respective first and second fluid channels.

Abstract translation: 工件支撑件具有具有顶部内壁和底部内壁的容器。 内腔被限定在顶部内壁和底部内壁之间，其中支撑表面构造成支撑工件。 板位于内腔内，将内腔分为顶腔和底腔。 顶部和底部腔体围绕板的周边流体耦合。 限定在板的顶部内壁和顶部的一个或多个中的第一锥形在顶部空腔的径向横截面上提供基本恒定的体积。 限定在板的底部内壁和底部中的一个或多个中的第二锥形在底部空腔的径向横截面上提供基本恒定的体积。 第一和第二端口将顶部和底部空腔流体地联接到相应的第一和第二流体通道。

公开(公告)号：US20140188416A1

公开(公告)日：2014-07-03

申请号：US13729524

申请日：2012-12-28

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： Edward K. McIntyre ,  Edward J. Ladny ,  Nathaniel Robertson ,  William Davis Lee

IPC: G01R29/24

CPC classification number: G01R29/24 ,  H01L21/67288 ,  H01L21/6833 ,  H01L21/68707

Abstract: An electrostatic clamp monitoring system is provided having an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface associated therewith via one or more electrodes. A power supply is electrically coupled to the electrostatic clamp, wherein the power supply is configured to selectively supply a clamping voltage to the one or more electrodes of the electrostatic clamp. A data acquisition system is coupled to the power supply and configured to measure a current supplied to the one or more electrodes, therein defining a measured current. A controller integrates the measured current over time, therein determining a charge value associated a clamping force between the workpiece and electrostatic clamp. A memory stores the charge value associated with the clamping force over a plurality of clamping cycles, therein defining a plurality of charge values, and the controller determines a clamping capability of the electrostatic clamp based on a comparison of a currently determined charge value to the plurality of charge values.

Abstract translation: 提供一种静电夹钳监测系统，其具有静电夹持器，其构造成选择性地将工件静电夹持到与其相关联的夹紧表面，经由一个或多个电极。 电源电耦合到静电夹持器，其中电源被配置为选择性地向静电夹的一个或多个电极提供钳位电压。 数据采集​​系统耦合到电源并且被配置为测量提供给一个或多个电极的电流，其中限定测量的电流。 控制器将测量的电流随时间整合，其中确定与工件和静电夹具之间的夹紧力相关联的电荷值。 存储器在多个钳位循环中存储与夹紧力相关联的电荷值，其中限定多个电荷值，并且控制器基于当前确定的电荷值与多个电荷值的比较来确定静电钳位的钳位能力 的电费值。

公开(公告)号：US20140065730A1

公开(公告)日：2014-03-06

申请号：US14013728

申请日：2013-08-29

Applicant: Axcelis Technologies, Inc.

Inventor： Ronald N. Reece ,  Shu Satoh ,  Serguei Kondratenko ,  Andy Ray

IPC: H01L21/66 ,  C23C14/48

CPC classification number: H01L22/26 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.

Abstract translation: 提供了离子注入系统，其具有被配置为向工件提供具有束密度的点离子束的离子注入装置，其中工件具有与其相关联的晶体结构。 扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。 还提供控制器并构造成当工件上的预定位置暴露于点离子束时，建立工件的预定局部温度。 因此，在预定位置处实现了工件的晶体结构的预定的局部混乱，其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比，以建立 工件在工件上预定位置的局部温度。

公开(公告)号：US08502173B2

公开(公告)日：2013-08-06

申请号：US13625277

申请日：2012-09-24

Applicant: Axcelis Technologies Inc.

Inventor： Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

IPC: H01J37/317

CPC classification number: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/006 ,  H01J2237/182 ,  H01J2237/24542

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract translation: 本文提供了将注入的气体（例如，氩，氙）引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强（例如，增加，减少）磁离子束的电荷中和（例如，扫描磁场不为零的区域处的离子束）来改善束流，从而减少由于零场导致的电流损耗 效果（ZFE）。 通过减小具有磁场的区域中的电流损耗，磁束电流增加（例如，在磁场不为零的区域中，束电流增加）在整个扫描中以均匀的方式提高整个束电流 路径，从而减少ZFE的影响。 换句话说，ZFE通过磁化束电流的增加有效地最小化而被去除。

公开(公告)号：US20040222390A1

公开(公告)日：2004-11-11

申请号：US10869368

申请日：2004-06-16

Applicant: Axcelis Technologies, Inc.

Inventor： Joseph Ferrara ,  Robert John Mitchell

IPC: H01J037/20

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/20207 ,  H01J2237/20221 ,  H01J2237/24528 ,  H01L21/68764 ,  H01L21/68771

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and overlaying an opening in the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having a rotating shaft that protrudes through the first member and an axis of rotation offset from an axis of rotation of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member that extends into the implantation chamber, the third member including a rotatable drive supporting the workpiece having an axis of rotation offset from the axis of rotation of the first rotation member. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.

Abstract translation: 离子束注入机包括用于产生沿着束线移动的离子束的离子束源和注入室，其中工件被定位成与离子束相交，用于通过离子束离子注入工件的表面。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。 工件支撑结构包括可旋转地联接到植入室并覆盖植入室中的开口的第一旋转构件。 工件支撑结构还包括第二旋转构件，其可旋转地联接到第一旋转构件并且具有从第一构件突出的旋转轴和从第一旋转构件的旋转轴线偏移的旋转轴。 工件支撑结构还包括固定地附接到第二旋转构件的第三构件，其延伸到注入室中，第三构件包括支撑工件的可旋转驱动装置，其具有偏离第一旋转构件的旋转轴线的旋转轴线。 第一旋转构件，第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件，其中在撞击植入之前离子束移动通过注入室的距离 工件表面是恒定的。

公开(公告)号：US20040021092A1

公开(公告)日：2004-02-05

申请号：US10628170

申请日：2003-07-28

Applicant: Axcelis Technologies, Inc.

Inventor： Joseph Ferrara

IPC: G01J001/00 ,  G01N021/00

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/24528 ,  H01L21/68764 ,  H01L21/68771

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and including an opening extending through the rotation member and aligned with an opening in a wall of the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having an axis of rotation offset from an axis of rotation of the first rotation member, the second rotation member overlying the opening of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member, the third member including a rotatable drive supporting the workpiece. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.

Abstract translation: 离子束注入机包括用于产生沿着束线移动的离子束的离子束源和注入室，其中工件被定位成与离子束相交，用于通过离子束离子注入工件的表面。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。 工件支撑结构包括可旋转地联接到植入室的第一旋转构件，并且包括延伸穿过旋转构件并与植入室的壁中的开口对准的开口。 所述工件支撑结构还包括第二旋转构件，所述第二旋转构件可旋转地联接到所述第一旋转构件并具有偏离所述第一旋转构件的旋转轴线的旋转轴线，所述第二旋转构件覆盖所述第一旋转构件的所述开口。 工件支撑结构还包括固定地附接到第二旋转构件的第三构件，第三构件包括支撑工件的可旋转驱动器。 第一旋转构件，第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件，其中在撞击植入之前离子束移动通过注入室的距离 工件表面是恒定的。