公开(公告)号：US20200266032A1

公开(公告)日：2020-08-20

申请号：US16791308

申请日：2020-02-14

Applicant: Axcelis Technologies, Inc.

Inventor： James DeLuca ,  Andy Ray ,  Neil Demario ,  Rosario Mollica

IPC: H01J37/317 ,  H01J37/05

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

公开(公告)号：US20140065730A1

公开(公告)日：2014-03-06

申请号：US14013728

申请日：2013-08-29

Applicant: Axcelis Technologies, Inc.

Inventor： Ronald N. Reece ,  Shu Satoh ,  Serguei Kondratenko ,  Andy Ray

IPC: H01L21/66 ,  C23C14/48

CPC classification number: H01L22/26 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.

Abstract translation: 提供了离子注入系统，其具有被配置为向工件提供具有束密度的点离子束的离子注入装置，其中工件具有与其相关联的晶体结构。 扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。 还提供控制器并构造成当工件上的预定位置暴露于点离子束时，建立工件的预定局部温度。 因此，在预定位置处实现了工件的晶体结构的预定的局部混乱，其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比，以建立 工件在工件上预定位置的局部温度。

公开(公告)号：US08502173B2

公开(公告)日：2013-08-06

申请号：US13625277

申请日：2012-09-24

Applicant: Axcelis Technologies Inc.

Inventor： Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

IPC: H01J37/317

CPC classification number: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/006 ,  H01J2237/182 ,  H01J2237/24542

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract translation: 本文提供了将注入的气体（例如，氩，氙）引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强（例如，增加，减少）磁离子束的电荷中和（例如，扫描磁场不为零的区域处的离子束）来改善束流，从而减少由于零场导致的电流损耗 效果（ZFE）。 通过减小具有磁场的区域中的电流损耗，磁束电流增加（例如，在磁场不为零的区域中，束电流增加）在整个扫描中以均匀的方式提高整个束电流 路径，从而减少ZFE的影响。 换句话说，ZFE通过磁化束电流的增加有效地最小化而被去除。

公开(公告)号：US09490185B2

公开(公告)日：2016-11-08

申请号：US14013728

申请日：2013-08-29

Applicant: Axcelis Technologies, Inc.

Inventor： Ronald N. Reece ,  Shu Satoh ,  Serguei Kondratenko ,  Andy Ray

IPC: H01L21/66 ,  C23C14/48 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01L22/26 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.

Abstract translation: 提供了离子注入系统，其具有被配置为向工件提供具有束密度的点离子束的离子注入装置，其中工件具有与其相关联的晶体结构。 扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。 还提供控制器并构造成当工件上的预定位置暴露于点离子束时，建立工件的预定局部温度。 因此，在预定位置处实现了工件的晶体结构的预定的局部混乱，其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比，以建立 工件在工件上预定位置的局部温度。

公开(公告)号：US20130026356A1

公开(公告)日：2013-01-31

申请号：US13625277

申请日：2012-09-24

Applicant: Axcelis Technologies Inc.

Inventor： Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

IPC: H01J3/14 ,  H01J49/26

CPC classification number: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/006 ,  H01J2237/182 ,  H01J2237/24542

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract translation: 本文提供了将注入的气体（例如，氩，氙）引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强（例如，增加，减少）磁离子束的电荷中和（例如，扫描磁场不为零的区域处的离子束）来改善束流，从而减少由于零场导致的电流损耗 效果（ZFE）。 通过减小具有磁场的区域中的电流损耗，磁束电流增加（例如，在磁场不为零的区域中，束电流增加）在整个扫描中以均匀的方式提高整个束电流 路径，从而减少ZFE的影响。 换句话说，ZFE通过磁化束电流的增加有效地最小化而被去除。

公开(公告)号：US20250166959A1

公开(公告)日：2025-05-22

申请号：US18934357

申请日：2024-11-01

Applicant: Axcelis Technologies, Inc.

Inventor： Andy Ray

IPC: H01J37/147 ,  H01J37/317

Abstract: An ion implantation system includes an ion source that generates ions and produces an ion beam along a beamline, a mass analyzer positioned downstream of the ion source that generates a magnetic field according to a selected charge-to-mass ratio. A beamline formed by ion beam is directed to a workpiece target. A gating apparatus includes one or more of: a mechanical gating device configured to block or deflect the ion beam from contacting a workpiece target; or a power control gating device configured to cut off power to the ion source. The beam-to-workpiece target translation mechanism changes the beam-to-workpiece target position while the ion beam is gated by the gating apparatus. Methods for implanting ions in predetermined profiles on a workpiece are disclosed with multiple scans. These systems and methods allow for implantation profiles with smooth curvature and/or sharp differences in dosage characteristics at adjacent positions.

公开(公告)号：US11646175B2

公开(公告)日：2023-05-09

申请号：US16791308

申请日：2020-02-14

Applicant: Axcelis Technologies, Inc.

Inventor： James DeLuca ,  Andy Ray ,  Neil Demario ,  Rosario Mollica

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/304 ,  H01J37/244 ,  H01J37/24 ,  H01J37/32

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/243 ,  H01J37/244 ,  H01J37/304 ,  H01J37/32357 ,  H01J2237/24535 ,  H01J2237/31701

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.