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公开(公告)号：US20240012332A1
公开(公告)日：2024-01-11
申请号：US18038601
申请日：2021-11-12
Applicant: ASML Netherlands B.V.
Inventor： Luc Roger Simonne HASPESLAGH , Nitesh PANDEY , Ties Wouter VAN DER WOORD , Halil Gökay YEGEN , Guilherme BRONDANI TORRI , Sebastianus Adrianus GOORDEN , Alexander Ludwig KLEIN , Jim Vincent OVERKAMP , Edgar Alberto OSORIO OLIVEROS
CPC classification number: G03F7/70116 , G02B26/0858 , H02N2/108 , H02N2/009 , H10N30/50 , H10N30/05 , G03F7/70625 , G03F7/7015 , G03F7/706849
Abstract: A micromirror array comprises a substrate, a plurality of mirrors for reflecting incident light and, for each mirror of the plurality of mirrors, at least one multilayer piezoelectric actuator for displacing the mirror, wherein the at least one multilayer piezoelectric actuator is connected to the substrate, and wherein the at least one multilayer piezoelectric actuator comprises a plurality of piezoelectric layers of piezoelectric material interleaved with a plurality of electrode layers to form a stack of layers. Also disclosed is a method of forming such a micromirror array. The micromirror array may be used in a programmable illuminator. The programmable illuminator may be used in a lithographic apparatus and/or in an inspection and/or metrology apparatus.
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公开(公告)号：US20240004283A1
公开(公告)日：2024-01-04
申请号：US18227833
申请日：2023-07-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles ABEGG , Nirupam BANERJEE , Michiel Alexander BLAUW , Derk Servatius Gertruda BROUNS , Paul JANSSEN , Matthias KRUIZINGA , Egbert LENDERINK , Nicolae MAXIM , Andrey NIKIPELOV , Arnoud Willem NOTENBOOM , Claudia PILIEGO , Mária PÉTER , Gijsbert RISPENS , Nadja SCHUH , Marcus Adrianus VAN DE KERKHOF , Willem Joan VAN DER ZANDE , Pieter-Jan VAN ZWOL , Antonius Willem VERBURG , Johannes Petrus Martinus Bernardus VERMEULEN , David Ferdinand VLES , Willem-Pieter VOORTHUIJZEN , Aleksandar Nikolov ZDRAVKOV
CPC classification number: G03F1/62 , G03F7/70191 , G03F7/70983 , G03F1/82 , G03F7/70916 , G03F7/70958 , G03F7/70575 , G02B5/208 , G02B5/283
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US11860554B2
公开(公告)日：2024-01-02
申请号：US17606785
申请日：2020-03-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Mark Johannes Hermanus Frencken , Theodorus Marcus Nagtegaal , Oleg Viacheslavovich Voznyi
IPC: G03F7/00
CPC classification number: G03F7/70783 , G03F7/7075 , G03F7/70875
Abstract: The invention provides an object positioner comprising:—an object support having an object support surface which is configured to engage at least a part of an object, said object support surface having a support surface temperature,—a thermal device, which thermal device is configured to provide at least a part of the object with a first object temperature, which first object temperature differs from the support surface temperature by a first predetermined temperature difference.
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公开(公告)号：US20230417628A1
公开(公告)日：2023-12-28
申请号：US18035895
申请日：2021-10-05
Applicant: ASML Netherlands B.V.
Inventor： Achim WOESSNER , Roberto PAGANO , Mark-Jan SPIJKMAN
CPC classification number: G01M11/0271 , G03F7/706849 , G03F7/706
Abstract: A measurement system (11), the measurement system comprising: a sensor apparatus (22); an illumination system (IL1) arranged to illuminate the sensor apparatus with radiation, the sensor apparatus comprising a patterned region arranged to receive a radiation beam and to form a plurality of diffraction beams, the diffraction beams being separated in a shearing direction; the sensor apparatus comprising a radiation detector (24); wherein the patterned region is arranged such that at least some of the diffraction beams form interference patterns on the radiation detector; wherein the sensor apparatus comprises a plurality of patterned regions (19a-19c, 20a, 20b), and wherein pitches of the patterned regions are different in adjacent patterned regions.
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公开(公告)号：US20230401727A1
公开(公告)日：2023-12-14
申请号：US18035233
申请日：2021-10-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Te-Sheng WANG
CPC classification number: G06T7/33 , G06T7/001 , G06T2207/30148 , G03F9/7042 , G03F7/705
Abstract: A method for aligning a measured image of a pattern printed on a substrate with a design layout. The method includes: obtaining a design layout of a pattern to be printed on a substrate and a measured image of the pattern printed on the substrate; performing a simulation process to generate a plurality of simulated contours of the design layout for a plurality of process conditions of a patterning process; identifying a set of disfavored locations based on the simulated contours; and performing an image alignment process to align the measured image with a selected contour of the simulated contours using locations other than the set of disfavored locations.
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Patent Agency Ranking
公开(公告)号：US20230401694A1
公开(公告)日：2023-12-14
申请号：US18033786
申请日：2021-11-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Chenxi LIN , Yi ZOU , Tanbir HASAN , Huina XU , Ren-Jay KOU , Nabeel Noor MOIN , Kourosh NAFISI
IPC: G06T7/00
CPC classification number: G06T7/001 , G06T2207/20081 , G06T2207/30148
Abstract: A method and apparatus for identifying locations to be inspected on a substrate is disclosed. A defect location prediction model is trained using a training dataset associated with other substrates to generate a prediction of defect or non-defect and a confidence score associated with the prediction for each of the locations based on process-related data associated with the substrates. Those of the locations determined by the defect location prediction model as having confidences scores satisfying a confidence threshold are added to a set of locations to be inspected by an inspection system. After the set of locations are inspected, the inspection results data is obtained, and the defect location prediction model is incrementally trained by using the inspection results data and process-related data for the set of locations as training data.
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公开(公告)号：US20230400785A1
公开(公告)日：2023-12-14
申请号：US18251261
申请日：2021-10-14
Applicant: ASML Netherlands B.V.
Inventor： Antonius Johannus VAN DER NET , Martinus Cornelis Maria VERHAGEN , Johannes Henricus Wilhelmus JACOBS , Laurentius Johannes Adrianus VAN BOKHOVEN , Jeroen Peterus Johannes VAN LIPZIG
IPC: G03F7/00
CPC classification number: G03F7/70891
Abstract: There is provided a conditioning system for a lithographic apparatus, said conditioning system being configured to condition one or more optical elements of the lithographic apparatus, wherein the conditioning system is configured to have a sub-atmospheric pressure at the one or more optical elements. Also provided are a lithographic apparatus comprising such a conditioning system, the use of such a conditioning system, a method of conditioning a system, as well as a lithographic method comprising a sub-atmospheric pressure cooling system
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公开(公告)号：US11842420B2
公开(公告)日：2023-12-12
申请号：US17659467
申请日：2022-04-15
Applicant: ASML Netherlands B.V.
Inventor： Wei Fang , Lingling Pu
CPC classification number: G06T7/337 , G06T7/001 , G06T7/13 , G06T7/74 , H01L21/67288 , H01L22/12 , G06T2207/10061 , G06T2207/30148
Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.
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公开(公告)号：US11835870B2
公开(公告)日：2023-12-05
申请号：US17627720
申请日：2020-06-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Güneş Nak{dot over (i)}boğlu , Nicholas Peter Waterson , Remco Van De Meerendonk , Steve Gregory Brust , Dirk Martinus Gerardus Petrus Wilhelmus Jakobs , Shravan Kottapalli
IPC: G03F7/00
CPC classification number: G03F7/70891
Abstract: A passive flow induced vibration reduction system for use in a temperature conditioning system that controls the temperature of at least one component within a lithographic apparatus. This FIV reduction system includes: a conduit that provides a flow path for a liquid through the system; a liquid filled cavity in fluid connection with the conduit, wherein the fluid connection is provided via one or more openings in the wall of the conduit; a membrane configured such that it separates the liquid in the liquid filled cavity from a gas at a substantially ambient pressure and the membrane is configured such that compliance of the membrane reduces at least low frequency flow induced vibrations in the liquid flowing through the conduit; and an end-stop located on the gas side of the membrane, wherein the end-stop is configured to limit an extent of deflection of the membrane.
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公开(公告)号：US11835862B2
公开(公告)日：2023-12-05
申请号：US17392963
申请日：2021-08-03
Applicant: ASML Netherlands B.V.
Inventor： Steven George Hansen
IPC: G06F30/398 , G06F119/18 , G03F7/00 , G06F30/30 , G06F30/367 , G03F1/70
CPC classification number: G03F7/705 , G03F1/70 , G03F7/70625 , G03F7/70666 , G06F30/30 , G06F30/367 , G06F30/398 , G06F2119/18
Abstract: A method of determining a relationship between a stochastic variation of a characteristic of an aerial image or a resist image and one or more design variables, the method including: measuring values of the characteristic from a plurality of aerial images and/or resist images for each of a plurality of sets of values of the design variables; determining a value of the stochastic variation, for each of the plurality of sets of values of the design variables, from a distribution of the values of the characteristic for that set of values of the design variables; and determining the relationship by fitting one or more parameters from the values of the stochastic variation and the plurality of sets of values of the design variables.
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