OVERLAY IMPROVEMENT METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING OVERLAY IMPROVEMENT METHOD

    公开(公告)号:US20240310719A1

    公开(公告)日:2024-09-19

    申请号:US18532757

    申请日:2023-12-07

    IPC分类号: G03F1/70 G03F7/00 H01L21/66

    摘要: An overlay correction method for improving an overlay parameter of an ultra-high order component includes: obtaining misalignment components of an overlay through measurement; converting the misalignment components into overlay parameters; applying a conversion logic between the overlay parameters; converting the overlay parameters into aberration input data; and performing an exposure process by applying the aberration input data to an exposure machine, wherein the overlay parameters are divided into a first overlay parameter shifting in a first direction that is an extending direction of a slit, and a second overlay parameter shifting in a second direction that is perpendicular to the first direction, and the performing of the exposure process includes correcting the first and second overlay parameters including a higher-order component of a 3rd order or greater with respect to a location of the slit in the first direction.

    METHOD OF MANAGING SEMICONDUCTOR PROCESSING APPARATUS

    公开(公告)号:US20240272561A1

    公开(公告)日:2024-08-15

    申请号:US18373030

    申请日:2023-09-26

    IPC分类号: G03F7/00 G06T7/00

    摘要: Provided is a method of managing a semiconductor processing apparatus, including irradiating, by a light source, a plurality of regions included in a diffuser on a mask stage with extreme ultraviolet (EUV) light, reflecting or transmitting, by the diffuser, the EUV light, transmitting, by an optical system, the EUV light from the diffuser, receiving, by an image sensor, the EUV light from the optical system, obtaining, by the image sensor, a plurality of original images corresponding to the plurality of regions, generating, based on an optical prediction model, a plurality of predictive images estimating a diffraction pattern in the image sensor, adjusting an optical prediction model by comparing the plurality of predictive images with the plurality of original images, and generating, based on the optical prediction model, a plurality of wavefront images corresponding to optical characteristics of each of the plurality of mirrors.

    ILLUMINATION CORRECTION APPARATUS
    3.
    发明公开

    公开(公告)号:US20240069443A1

    公开(公告)日:2024-02-29

    申请号:US18144622

    申请日:2023-05-08

    IPC分类号: G03F7/20 G01J1/42

    摘要: An illumination correction apparatus for correcting a radiation beam incident on a reticle from an exposure apparatus includes a plurality of fingers each having a surface facing an incident direction of the radiation beam, the plurality of fingers being arranged in a first direction to be adjacent to a path of the radiation beam, and configured to adjust an amount of the incident radiation beam by moving in a second direction, intersecting the first direction, a controller connected to the plurality of fingers and configured to control movement of the plurality of fingers such that an intensity of the radiation beam has uniformity in the first direction, at least one optical sensor on the surface of at least one finger of the plurality of fingers, and a measurement unit configured to measure, based on an output of the at least one optical sensor, the intensity of the radiation beam.

    LITHOGRAPHIC METHOD
    4.
    发明公开
    LITHOGRAPHIC METHOD 审中-公开

    公开(公告)号:US20240004307A1

    公开(公告)日:2024-01-04

    申请号:US18039484

    申请日:2021-11-29

    IPC分类号: G03F7/00

    CPC分类号: G03F7/706 G03F7/70575

    摘要: A method of forming a pattern on a substrate using a lithographic apparatus provided with a patterning device and a projection system having chromatic aberrations, the method including: providing a radiation beam having a plurality of wavelength components to the patterning device; forming an image of the patterning device on the substrate using the projection system to form the pattern, wherein a position of the pattern is dependent on a wavelength of the radiation beam due to the chromatic aberrations; and controlling a spectrum of the radiation beam to control the position of the pattern.

    Techniques for correction of aberrations

    公开(公告)号:US11852980B2

    公开(公告)日:2023-12-26

    申请号:US17452831

    申请日:2021-10-29

    IPC分类号: G03F7/00

    CPC分类号: G03F7/706

    摘要: Some implementations described herein provide an exposure tool. The exposure tool includes a reticle deformation detector and one or more processors configured to obtain, via the reticle deformation detector, reticle deformation information associated with a reticle during a scanning process for scanning multiple fields of a wafer. The one or more processors determine, based on the reticle deformation information, a deformation of the reticle at multiple times during the scanning process, and perform, based on the deformation of the reticle at the multiple times, one or more adjustments of one or more components of the exposure tool during the scanning process.

    MEASURING METHOD AND MEASURING SYSTEM FOR INTERFEROMETRICALLY MEASURING THE IMAGING QUALITY

    公开(公告)号:US20190212226A1

    公开(公告)日:2019-07-11

    申请号:US16242480

    申请日:2019-01-08

    发明人: Ulrich WEGMANN

    IPC分类号: G01M11/02 G01J9/02 G03F7/20

    摘要: The imaging quality of an optical imaging system is interferometrically measured. A wavefront measurement has a first imaging scale β1 in a first direction and a second imaging scale β2 in a second, perpendicular direction. The second imaging scale differs from the first imaging scale by a scale ratio (β1/β2)≠1 (anamorphic imaging system). A first measurement structure (MS1) on a first structure carrier arranged on the object side of the imaging system has a two-dimensional mask structure suitable for shaping the coherence of measurement radiation. A second measurement structure (MS2) on a second structure carrier arranged on the image side of the imaging system has a diffraction grating. The first and second measurement structures are mutually adapted, taking account of the scale ratio so that an interference pattern arises upon imaging the first measurement structure onto the second measurement structure using the anamorphic imaging system.