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1.
公开(公告)号:US20240310719A1
公开(公告)日:2024-09-19
申请号:US18532757
申请日:2023-12-07
发明人: Jonghyun HWANG , Jaeil LEE , Kyoungcho NA
CPC分类号: G03F1/70 , G03F7/70504 , G03F7/70508 , G03F7/70516 , G03F7/706 , H01L22/12
摘要: An overlay correction method for improving an overlay parameter of an ultra-high order component includes: obtaining misalignment components of an overlay through measurement; converting the misalignment components into overlay parameters; applying a conversion logic between the overlay parameters; converting the overlay parameters into aberration input data; and performing an exposure process by applying the aberration input data to an exposure machine, wherein the overlay parameters are divided into a first overlay parameter shifting in a first direction that is an extending direction of a slit, and a second overlay parameter shifting in a second direction that is perpendicular to the first direction, and the performing of the exposure process includes correcting the first and second overlay parameters including a higher-order component of a 3rd order or greater with respect to a location of the slit in the first direction.
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公开(公告)号:US20240272561A1
公开(公告)日:2024-08-15
申请号:US18373030
申请日:2023-09-26
发明人: Junho SHIN , Seungbeom PARK , Jangwoon SUNG , Hojun LEE , Wookrae KIM , Myungjun LEE
CPC分类号: G03F7/706839 , G03F7/706 , G03F7/70641 , G06T7/001 , G06T2207/30148
摘要: Provided is a method of managing a semiconductor processing apparatus, including irradiating, by a light source, a plurality of regions included in a diffuser on a mask stage with extreme ultraviolet (EUV) light, reflecting or transmitting, by the diffuser, the EUV light, transmitting, by an optical system, the EUV light from the diffuser, receiving, by an image sensor, the EUV light from the optical system, obtaining, by the image sensor, a plurality of original images corresponding to the plurality of regions, generating, based on an optical prediction model, a plurality of predictive images estimating a diffraction pattern in the image sensor, adjusting an optical prediction model by comparing the plurality of predictive images with the plurality of original images, and generating, based on the optical prediction model, a plurality of wavefront images corresponding to optical characteristics of each of the plurality of mirrors.
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公开(公告)号:US20240069443A1
公开(公告)日:2024-02-29
申请号:US18144622
申请日:2023-05-08
发明人: Donghyeong Kim , Eunhee Jeang , Teun Boeren , Yoonsang Lee , Jeonggil Kim , Kyungbin Park
CPC分类号: G03F7/70266 , G01J1/4257 , G03F7/70308 , G03F7/70516 , G03F7/706 , H01L21/0274
摘要: An illumination correction apparatus for correcting a radiation beam incident on a reticle from an exposure apparatus includes a plurality of fingers each having a surface facing an incident direction of the radiation beam, the plurality of fingers being arranged in a first direction to be adjacent to a path of the radiation beam, and configured to adjust an amount of the incident radiation beam by moving in a second direction, intersecting the first direction, a controller connected to the plurality of fingers and configured to control movement of the plurality of fingers such that an intensity of the radiation beam has uniformity in the first direction, at least one optical sensor on the surface of at least one finger of the plurality of fingers, and a measurement unit configured to measure, based on an output of the at least one optical sensor, the intensity of the radiation beam.
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公开(公告)号:US20240004307A1
公开(公告)日:2024-01-04
申请号:US18039484
申请日:2021-11-29
IPC分类号: G03F7/00
CPC分类号: G03F7/706 , G03F7/70575
摘要: A method of forming a pattern on a substrate using a lithographic apparatus provided with a patterning device and a projection system having chromatic aberrations, the method including: providing a radiation beam having a plurality of wavelength components to the patterning device; forming an image of the patterning device on the substrate using the projection system to form the pattern, wherein a position of the pattern is dependent on a wavelength of the radiation beam due to the chromatic aberrations; and controlling a spectrum of the radiation beam to control the position of the pattern.
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公开(公告)号:US11852980B2
公开(公告)日:2023-12-26
申请号:US17452831
申请日:2021-10-29
发明人: Min-Cheng Wu , Ching-Ju Huang
IPC分类号: G03F7/00
CPC分类号: G03F7/706
摘要: Some implementations described herein provide an exposure tool. The exposure tool includes a reticle deformation detector and one or more processors configured to obtain, via the reticle deformation detector, reticle deformation information associated with a reticle during a scanning process for scanning multiple fields of a wafer. The one or more processors determine, based on the reticle deformation information, a deformation of the reticle at multiple times during the scanning process, and perform, based on the deformation of the reticle at the multiple times, one or more adjustments of one or more components of the exposure tool during the scanning process.
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6.
公开(公告)号:US20230229090A1
公开(公告)日:2023-07-20
申请号:US18010637
申请日:2021-06-02
IPC分类号: G03F7/00
CPC分类号: G03F7/70266 , G03F7/706 , G03F7/70504 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70891 , G02B7/028
摘要: The invention provides a method for thermo-mechanical control of a heat sensitive element (Ml) subject to a heat load, comprising: -providing a non-linear thermo-mechanical model of the heat sensitive element describing a dynamical relationship between characteristics of the heat load and deformation of the heat sensitive element; -calculating a control signal on the basis of an optimization calculation of the non-linear model, -providing an actuation signal to a heater (HE), wherein the actuation signal is at least partially based on the control signal, -heating the heat sensitive element by the heater on the basis of the actuation signal.
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7.
公开(公告)号:US20190212226A1
公开(公告)日:2019-07-11
申请号:US16242480
申请日:2019-01-08
申请人: Carl Zeiss SMT GmbH
发明人: Ulrich WEGMANN
CPC分类号: G01M11/0264 , G01J9/0215 , G01J2009/0219 , G01M11/0271 , G03F7/706
摘要: The imaging quality of an optical imaging system is interferometrically measured. A wavefront measurement has a first imaging scale β1 in a first direction and a second imaging scale β2 in a second, perpendicular direction. The second imaging scale differs from the first imaging scale by a scale ratio (β1/β2)≠1 (anamorphic imaging system). A first measurement structure (MS1) on a first structure carrier arranged on the object side of the imaging system has a two-dimensional mask structure suitable for shaping the coherence of measurement radiation. A second measurement structure (MS2) on a second structure carrier arranged on the image side of the imaging system has a diffraction grating. The first and second measurement structures are mutually adapted, taking account of the scale ratio so that an interference pattern arises upon imaging the first measurement structure onto the second measurement structure using the anamorphic imaging system.
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公开(公告)号:US20190128825A1
公开(公告)日:2019-05-02
申请号:US15962981
申请日:2018-04-25
发明人: Qin ZHONG , Antoine P. MANENS , Hwan J. JEONG
IPC分类号: G01N21/958 , G02B26/08 , G01M11/02 , G03F7/20
CPC分类号: G01N21/958 , G01M11/0278 , G01N2021/9583 , G02B26/0833 , G03F7/70025 , G03F7/70291 , G03F7/70316 , G03F7/706 , G03F9/7026
摘要: A method for qualitatively detecting aberration and determine aberration types in a photolithography system is disclosed. The method includes using a digital micromirror device (DMD) pattern to project an optical signal on a reflective substrate, acquiring a return optical signal reflected from the substrate at different focus heights (ranging from above to below best focus), forming a through focus curve based off of the return optical signal at various focus heights, comparing the through focus curve to a predetermined curve—the predetermined curve being a function of focus, and determining if a lens aberration is present. By using the existing hardware of the photolithography system to determine if a lens aberration exists, costs are maintained at a minimum and the DMD pattern creates a through focus curve (TFC) image in less than five minutes allowing for quick correction.
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9.
公开(公告)号:US20190101832A1
公开(公告)日:2019-04-04
申请号:US16207460
申请日:2018-12-03
申请人: Carl Zeiss SMT GmbH
CPC分类号: G03F7/70258 , G02B13/143 , G02B17/0856 , G02B17/0892 , G03F7/70225 , G03F7/706
摘要: A catadioptric projection objective for images an object field onto an image field via imaging radiation. The projection objective includes at least one reflective optical component and a measuring device. The reflective optical component, during the operation of the projection objective, reflects a first part of the imaging radiation and transmits a second part of the imaging radiation. The reflected, first part of the imaging radiation at least partly contributes to the imaging of the object field. The transmitted, second part of the imaging radiation is at least partly fed to a measuring device. This allows a simultaneous exposure of the photosensitive layer at the location of the image field with the imaging radiation and monitoring of the imaging radiation with the aid of the measuring device.
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10.
公开(公告)号:US20180348145A1
公开(公告)日:2018-12-06
申请号:US15979990
申请日:2018-05-15
申请人: ASML Netherlands B.V. , Stichting Nederlandse Wetenschappelijk Onderzoek Instituten , Stichting VU , Universiteit van Amsterdam
发明人: Stefan Michiel WITTE , Gijsbert Simon Matthijs Jansen , Lars Christian Freisem , Kjeld Sijbrand Eduard Eikema , Simon Gijsbert Josephus Mathijssen
CPC分类号: G03F7/706 , G01J9/00 , G03F7/70133 , G03F7/70141 , G03F7/70191
摘要: A metrology apparatus (302) includes a higher harmonic generation (HHG) radiation source for generating (310) EUV radiation. Operation of the HHG source is monitored using a wavefront sensor (420) which comprises an aperture array (424, 702) and an image sensor (426). A grating (706) disperses the radiation passing through each aperture so that the image detector captures positions and intensities of higher diffraction orders for different spectral components and different locations across the beam. In this way, the wavefront sensor can be arranged to measure a wavefront tilt for multiple harmonics at each location in said array. In one embodiment, the apertures are divided into two subsets (A) and (B), the gratings (706) of each subset having a different direction of dispersion. The spectrally resolved wavefront information (430) is used in feedback control (432) to stabilize operation of the HGG source, and/or to improve accuracy of metrology results.
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