- 专利标题: OVERLAY IMPROVEMENT METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING OVERLAY IMPROVEMENT METHOD
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申请号: US18532757申请日: 2023-12-07
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公开(公告)号: US20240310719A1公开(公告)日: 2024-09-19
- 发明人: Jonghyun HWANG , Jaeil LEE , Kyoungcho NA
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20230034173 2023.03.15
- 主分类号: G03F1/70
- IPC分类号: G03F1/70 ; G03F7/00 ; H01L21/66
摘要:
An overlay correction method for improving an overlay parameter of an ultra-high order component includes: obtaining misalignment components of an overlay through measurement; converting the misalignment components into overlay parameters; applying a conversion logic between the overlay parameters; converting the overlay parameters into aberration input data; and performing an exposure process by applying the aberration input data to an exposure machine, wherein the overlay parameters are divided into a first overlay parameter shifting in a first direction that is an extending direction of a slit, and a second overlay parameter shifting in a second direction that is perpendicular to the first direction, and the performing of the exposure process includes correcting the first and second overlay parameters including a higher-order component of a 3rd order or greater with respect to a location of the slit in the first direction.
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