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    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    1.
    发明公开
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240162096A1

    公开(公告)日：2024-05-16

    申请号：US18416585

    申请日：2024-01-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seongkeun Cho ,  Eunhee Jeang ,  Jihun Lee ,  Gyumin Jeong ,  Hyunjae Kang ,  Taemin Earmme

    IPC: H01L21/66 ,  H01L21/311

    CPC classification number: H01L22/12 ,  H01L21/31144

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

    WAFER PROCESSING APPARATUS
    2.
    发明申请
    WAFER PROCESSING APPARATUS 有权

    公开(公告)号：US20220216039A1

    公开(公告)日：2022-07-07

    申请号：US17401443

    申请日：2021-08-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunhee Jeang ,  Seongkeun Cho ,  Kyungrim Kim ,  Incheol Song ,  Jangwon Cho

    IPC: H01J37/32

    Abstract: A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

    Illumination correction apparatus
    3.
    发明授权
    Illumination correction apparatus 有权

    公开(公告)号：US12298671B2

    公开(公告)日：2025-05-13

    申请号：US18144622

    申请日：2023-05-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Donghyeong Kim ,  Eunhee Jeang ,  Teun Boeren ,  Yoonsang Lee ,  Jeonggil Kim ,  Kyungbin Park

    IPC: G03F7/00 ,  G01J1/42 ,  H01L21/027

    Abstract: An illumination correction apparatus for correcting a radiation beam incident on a reticle from an exposure apparatus includes a plurality of fingers each having a surface facing an incident direction of the radiation beam, the plurality of fingers being arranged in a first direction to be adjacent to a path of the radiation beam, and configured to adjust an amount of the incident radiation beam by moving in a second direction, intersecting the first direction, a controller connected to the plurality of fingers and configured to control movement of the plurality of fingers such that an intensity of the radiation beam has uniformity in the first direction, at least one optical sensor on the surface of at least one finger of the plurality of fingers, and a measurement unit configured to measure, based on an output of the at least one optical sensor, the intensity of the radiation beam.

    SEMICONDUCTOR PROCESS APPARATUS
    4.
    发明申请
    SEMICONDUCTOR PROCESS APPARATUS 有权

    公开(公告)号：US20250028257A1

    公开(公告)日：2025-01-23

    申请号：US18436744

    申请日：2024-02-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoungwhan Oh ,  Dahae Lee ,  Eunhee Jeang ,  Chulmin Cho ,  Kyungwon Kang

    IPC: G03F7/00 ,  G03F7/20

    Abstract: A semiconductor process apparatus includes a light generator configured to output extreme ultraviolet (EUV) light having an EUV wavelength band, a mask stage configured to seat a mask reflecting the EUV light output from the light generator, a light-receiving optical unit including a plurality of mirrors generating output light by reflecting the EUV light reflected from the mask, at least one of the plurality of mirrors including a mirror body and a reflective layer attached to a surface of the mirror body, a power supply configured to apply a bias voltage to the reflective layer, and a substrate stage configured to seat a substrate to be irradiated with the output light.

    ILLUMINATION CORRECTION APPARATUS
    5.
    发明公开
    ILLUMINATION CORRECTION APPARATUS 审中-公开

    公开(公告)号：US20240069443A1

    公开(公告)日：2024-02-29

    申请号：US18144622

    申请日：2023-05-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Donghyeong Kim ,  Eunhee Jeang ,  Teun Boeren ,  Yoonsang Lee ,  Jeonggil Kim ,  Kyungbin Park

    IPC: G03F7/20 ,  G01J1/42

    CPC classification number: G03F7/70266 ,  G01J1/4257 ,  G03F7/70308 ,  G03F7/70516 ,  G03F7/706 ,  H01L21/0274

    Abstract: An illumination correction apparatus for correcting a radiation beam incident on a reticle from an exposure apparatus includes a plurality of fingers each having a surface facing an incident direction of the radiation beam, the plurality of fingers being arranged in a first direction to be adjacent to a path of the radiation beam, and configured to adjust an amount of the incident radiation beam by moving in a second direction, intersecting the first direction, a controller connected to the plurality of fingers and configured to control movement of the plurality of fingers such that an intensity of the radiation beam has uniformity in the first direction, at least one optical sensor on the surface of at least one finger of the plurality of fingers, and a measurement unit configured to measure, based on an output of the at least one optical sensor, the intensity of the radiation beam.

    Method of fabricating a semiconductor device
    6.
    发明授权
    Method of fabricating a semiconductor device 有权

    公开(公告)号：US12224214B2

    公开(公告)日：2025-02-11

    申请号：US18416585

    申请日：2024-01-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seongkeun Cho ,  Eunhee Jeang ,  Jihun Lee ,  Gyumin Jeong ,  Hyunjae Kang ,  Taemin Earmme

    IPC: H01L21/66 ,  H01L21/311

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

    Method of fabricating a semiconductor device
    8.
    发明授权
    Method of fabricating a semiconductor device 有权

    公开(公告)号：US11955387B2

    公开(公告)日：2024-04-09

    申请号：US17386323

    申请日：2021-07-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seongkeun Cho ,  Eunhee Jeang ,  Jihun Lee ,  Gyumin Jeong ,  Hyunjae Kang ,  Taemin Earmme

    IPC: H01L21/66 ,  H01L21/311

    CPC classification number: H01L22/12 ,  H01L21/31144

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

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