Some implementations described herein provide an exposure tool. The exposure tool includes a reticle deformation detector and one or more processors configured to obtain, via the reticle deformation detector, reticle deformation information associated with a reticle during a scanning process for scanning multiple fields of a wafer. The one or more processors determine, based on the reticle deformation information, a deformation of the reticle at multiple times during the scanning process, and perform, based on the deformation of the reticle at the multiple times, one or more adjustments of one or more components of the exposure tool during the scanning process.