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公开(公告)号：US20240272560A1
公开(公告)日：2024-08-15
申请号：US18434204
申请日：2024-02-06
发明人： Seong Yun CHOI , Hyo Sik HAM
IPC分类号： G03F7/00
CPC分类号： G03F7/70633 , G03F7/70666 , G03F7/706837 , G03F7/706849
摘要： Disclosed is an overlay measurement apparatus which may include: a light source unit configured to direct an illumination to an overlay measurement target formed in a wafer; a lens unit having an objective lens and a lens focus actuator; a detection unit acquiring a focus image at a measurement position; a stage on which the wafer is seated; and a control unit controlling the lens unit to acquire the overlay measurement target, processing a first sample image of the overlay measurement target detected by the detection unit and a second sample image rotated at 180 degrees based on the first sample image and detected, and calculating a difference between the processed images to calculate the difference as a correction image for correcting an image for which overlay is measured.
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2.发明授权公开(公告)号：US10073936B2
公开(公告)日：2018-09-11
申请号：US14542166
申请日：2014-11-14
发明人： Kenji Yamazoe
CPC分类号： G06F17/5045 , G03F7/70058 , G03F7/70091 , G03F7/705 , G03F7/70666
摘要： A generation method of generating, by a computer, data of a pattern of a mask used for an exposure apparatus including a projection optical system. The method includes dividing an effective light source formed on a pupil plane of the projection optical system into a plurality of point sources; generating a plurality of shifted pupil functions by shifting a pupil function corresponding to each of the plurality of point sources by a shift amount in accordance with a position of each point source; defining a matrix by arranging each of the plurality of shifted pupil functions in each row or each column of the matrix; calculating an eigenvalue and an eigenfunction by performing singular value decomposition of the matrix; calculating a map representing, when elements of a target pattern are inserted on an object plane of the projection optical system, an influence the elements inflict on each other.
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公开(公告)号：US10007196B2
公开(公告)日：2018-06-26
申请号：US14663084
申请日：2015-03-19
申请人： NIKON CORPORATION
发明人： Yuichi Shibazaki
IPC分类号： G03F7/20
CPC分类号： G03F7/70725 , G03F7/70341 , G03F7/70666 , G03F7/70733 , Y10T29/49155
摘要： A lithographic apparatus includes a substrate table capable of holding a substrate, a projection system that projects a patterned beam of radiation onto the substrate held by the substrate table, and a sensor table that is not capable of holding a substrate but that includes a sensor capable of sensing a property of the patterned beam of radiation. In addition, a first positioning system is connected to the substrate table and displaces the substrate table into and out of a path of the patterned beam of radiation, and a second positioning system is capable of positioning the sensor table into the path of the patterned beam of radiation when the substrate table is displaced out of the path of the patterned beam of radiation.
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4.发明申请公开(公告)号：US20180059553A1
公开(公告)日：2018-03-01
申请号：US15689051
申请日：2017-08-29
发明人： Tadaki Miyazaki
CPC分类号： G03F7/70666 , G03F1/84 , G03F7/70258 , G03F7/7065 , G03F9/7003 , G03F9/7088
摘要： A method detects a position of a target in an image using a template having first to Nth feature points. The method includes obtaining an index indicating correlation between the template and the image by repeating processing for each relative positions of the template with respect to the image, while sequentially setting first to nth (n≦N) feature points as a feature point of interest. When the feature point of interest is a Jth feature point, whether an intermediate index indicating the correlation obtained based on processing of the first to Jth feature points satisfies a censoring condition is determined, and processing of (J+1)th and subsequent feature points is canceled if the intermediate index satisfies the censoring condition.
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公开(公告)号：US20180031981A1
公开(公告)日：2018-02-01
申请号：US15546592
申请日：2016-01-20
CPC分类号： G03F7/7065 , G03F1/60 , G03F1/84 , G03F7/705 , G03F7/70525 , G03F7/70641 , G03F7/70666 , G06F17/5009 , G06F17/5081 , G06F2217/12 , G06N20/00
摘要： A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.
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公开(公告)号：US20170371252A1
公开(公告)日：2017-12-28
申请号：US15686718
申请日：2017-08-25
申请人： NIKON CORPORATION
发明人： Yuichi SHIBAZAKI
CPC分类号： G03F7/70725 , G03F7/70341 , G03F7/70358 , G03F7/70641 , G03F7/70666 , G03F7/70675 , G03F7/70733 , G03F7/70775 , G03F7/7085 , G03F7/70975 , G03F9/7026 , G03F9/7084 , Y10T29/49826
摘要： A controller of an exposure apparatus (1) controls a second drive system so that scanning exposure is performed via a projection optical system and liquid of a liquid immersion area, from an area located on one side in a first direction, of a plurality of areas of a substrate held by a second stage that is placed facing the projection optical system and (ii) controls the second drive system so that a third stage comes close to the second stage from the other side in the first direction, and the second and the third stages that have come close together move from the other side to the one side in the first direction in order to place the third stage to face the projection optical system instead of the second stage while substantially maintaining the liquid immersion area under the lens.
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公开(公告)号：US09842186B2
公开(公告)日：2017-12-12
申请号：US14861847
申请日：2015-09-22
发明人： Frank Gang Chen , Joseph Werner De Vocht , Yuelin Du , Wanyu Li , Yen-Wen Lu
CPC分类号： G06F17/5081 , G03F7/705 , G03F7/70508 , G03F7/70625 , G03F7/70641 , G03F7/70666
摘要： Disclosed herein is a computer-implemented method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method comprising: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.
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公开(公告)号：US20170261865A1
公开(公告)日：2017-09-14
申请号：US15600174
申请日：2017-05-19
申请人： NIKON CORPORATION
发明人： Yuichi SHIBAZAKI
CPC分类号： G03F7/70725 , G03F7/70341 , G03F7/70358 , G03F7/70641 , G03F7/70666 , G03F7/70675 , G03F7/70733 , G03F7/70775 , G03F7/7085 , G03F7/70975 , G03F9/7026 , G03F9/7084 , Y10T29/49826
摘要： A partial section of an aerial image measuring unit is arranged at a wafer stage and part of the remaining section is arranged at a measurement stage, and the aerial image measuring unit measures an aerial image of a mark formed by a projection optical system. Therefore, for example, when the aerial image measuring unit measures a best focus position of the projection optical system, the measurement can be performed using the position of the wafer stage, at which a partial section of the aerial image measuring unit is arranged, in a direction parallel to an optical axis of the projection optical system as a datum for the best focus position. Accordingly, when exposing an object with illumination light, the position of the wafer stage in the direction parallel to the optical axis is adjusted with high accuracy based on the measurement result of the best focus position.
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9.发明授权Lithography system for processing a target, such as a wafer, and a method for operating a lithography system for processing a target, such as a wafer 有权用于处理诸如晶片的目标的平版印刷系统和用于操作用于处理诸如晶片的目标的光刻系统的方法公开(公告)号：US09395636B2
公开(公告)日：2016-07-19
申请号：US13453994
申请日：2012-04-23
申请人： Guido De Boer , Niels Vergeer , Godefridus Cornelius Antonius Couweleers , Laurens Plandsoen , Cor Verburg
发明人： Guido De Boer , Niels Vergeer , Godefridus Cornelius Antonius Couweleers , Laurens Plandsoen , Cor Verburg
CPC分类号： G03F9/7088 , G03F7/70616 , G03F7/70666 , G03F7/70775 , G03F7/7085 , G03F9/7023 , G03F9/7053
摘要： The invention relates to a lithography system for processing a target, such as a wafer. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system connected to the final projection system and arranged for detecting a position mark on a surface.
摘要翻译： 本发明涉及一种用于处理诸如晶片的靶的光刻系统。 光刻系统包括布置成提供图案化光束的光束源，布置成用于在目标表面上投影图案的最终投影系统，布置成用于支撑目标的卡盘和连接到最终投影系统的标记位置系统，并且布置成用于检测 表面上的位置标记。
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10.发明申请公开(公告)号：US20150192865A1
公开(公告)日：2015-07-09
申请号：US14663084
申请日：2015-03-19
申请人： NIKON CORPORATION
发明人： Yuichi SHIBAZAKI
IPC分类号： G03F7/20
CPC分类号： G03F7/70725 , G03F7/70341 , G03F7/70666 , G03F7/70733 , Y10T29/49155
摘要： A lithographic apparatus includes a substrate table capable of holding a substrate, a projection system that projects a patterned beam of radiation onto the substrate held by the substrate table, and a sensor table that is not capable of holding a substrate but that includes a sensor capable of sensing a property of the patterned beam of radiation. In addition, a first positioning system is connected to the substrate table and displaces the substrate table into and out of a path of the patterned beam of radiation, and a second positioning system is capable of positioning the sensor table into the path of the patterned beam of radiation when the substrate table is displaced out of the path of the patterned beam of radiation.
摘要翻译： 光刻设备包括能够保持衬底的衬底台，将图案化的辐射束投影到由衬底台保持的衬底上的投影系统，以及不能保持衬底的传感器台，但是包括传感器能够 感测图案化的辐射束的性质。 此外，第一定位系统连接到衬底台，并将衬底台移入和移出图案化辐射束的路径，并且第二定位系统能够将传感器台定位到图案化梁的路径中 当衬底台被移出图案化的辐射束的路径之外时的辐射。
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