公开(公告)号：US08196546B1

公开(公告)日：2012-06-12

申请号：US12950376

申请日：2010-11-19

Applicant: Sarko Cherekdjian

Inventor： Sarko Cherekdjian

IPC: H01L21/00

CPC classification number: H01J37/32366 ,  C23C14/48 ,  C23C14/54 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/024 ,  H01J2237/0827 ,  H01J2237/31701 ,  H01L21/2236 ,  H01L21/76254

Abstract: Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.

Abstract translation: 方法和装置提供：第一等离子体源，其中所述等离子体包括第一种离子; 第二等离子体源，其中所述等离子体包括第二种离子; 从第一和第二来源选择等离子体; 并且将第一种离子或第二种离子加速到半导体晶片。

公开(公告)号：US20120104274A1

公开(公告)日：2012-05-03

申请号：US13382002

申请日：2010-07-13

Applicant: Hirohisa Hirayanagi ,  Ayumu Miyoshi ,  Einstein Noel Abarra

Inventor： Hirohisa Hirayanagi ,  Ayumu Miyoshi ,  Einstein Noel Abarra

IPC: G21K5/00 ,  B01J19/08 ,  H01J27/02

CPC classification number: H01J37/08 ,  B82Y10/00 ,  C23C14/46 ,  G11B5/743 ,  G11B5/855 ,  H01J27/024 ,  H01J27/16 ,  H01J37/147 ,  H01J37/30 ,  H01J37/32422 ,  H01J2237/024 ,  H01J2237/061 ,  H01J2237/3151 ,  H01J2237/316 ,  H01J2237/3165

Abstract: There is provided an ion beam generating apparatus capable of reducing power consumption and obtain highly-accurate uniformity in a substrate process without providing a mechanism to rotate a substrate. Each of ion beam generating apparatuses 1a and 1b includes a discharging tank for generating plasma, an extraction electrode including an inclined portion arranged so as to be inclined with respect to an irradiated surface for extracting an ion generated in the discharging tank, a rotating driving unit 30 provided out of the discharging tank for rotating the extraction electrode, and a rotation supporting member 31 for coupling the rotating driving unit 30 and the extraction electrode 7, wherein an insulator block 34 arranged around the rotation supporting member 31 is included in the discharging tank.

Abstract translation: 提供了一种离子束发生装置，其能够降低功耗并获得基板工艺中的高精度均匀性，而不提供旋转基板的机构。 离子束产生装置1a和1b中的每一个包括用于产生等离子体的排出槽，提取电极包括相对于用于提取在排放箱中产生的离子的照射表面倾斜布置的倾斜部分，旋转驱动单元 设置在用于使引出电极旋转的排放槽中的30;以及用于联接旋转驱动单元30和提取电极7的旋转支撑构件31，其中布置在旋转支撑构件31周围的绝缘体块34包括在排出槽 。

公开(公告)号：US08101927B2

公开(公告)日：2012-01-24

申请号：US12775728

申请日：2010-05-07

Applicant: Charles T. Carlson ,  William T. Weaver

Inventor： Charles T. Carlson ,  William T. Weaver

IPC: H01J37/317 ,  H01J1/54 ,  A61N5/00

CPC classification number: H01L21/266 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/024 ,  H01J2237/20214 ,  H01J2237/31711

Abstract: A masking apparatus includes a mask positioned upstream of a target positioned for treatment with ions. The mask is sized relative to the target to cause a first half of the target to be treated with a selective treatment of ions through the mask and a second half of the target to be treated with a blanket treatment of ions unimpeded by the mask during a first time interval. The masking apparatus also includes a positioning mechanism to change a relative position of the mask and the target so that the second half of the target is treated with the selective treatment of ions and the first half of the target is treated with the blanket implant during a second time interval. An ion implanter having the masking apparatus is also provided.

Abstract translation: 掩模装置包括位于被定位用于用离子处理的靶的上游的掩模。 掩模的尺寸相对于目标，以使靶的第一半被选择性地处理离子通过掩模和待处理的靶的第二半被处理，在一个 第一时间间隔。 掩蔽装置还包括定位机构，以改变掩模和靶的相对位置，以便通过选择性处理离子来处理靶的后半部分，并且在 第二时间间隔。 还提供了具有掩蔽装置的离子注入机。

公开(公告)号：US20110291007A1

公开(公告)日：2011-12-01

申请号：US12787139

申请日：2010-05-25

Applicant: YI-XIANG WANG ,  JOE WANG ,  XUEDONG LIU ,  ZHONGWEI CHEN

Inventor： YI-XIANG WANG ,  JOE WANG ,  XUEDONG LIU ,  ZHONGWEI CHEN

IPC: G01N23/22 ,  H01J37/244

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/24465 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2611 ,  H01J2237/2817

Abstract: The present invention generally relates to a detection unit of a charged particle imaging system. More particularly, portion of the detection unit can move into or out of the detection system as imaging condition required. With the assistance of a Wein filter (also known as an E×B charged particle analyzer) and a movable detector design, the present invention provides a stereo imaging system that suitable for both low current, high resolution mode and high current, high throughput mode. Merely by way of example, the invention has been applied to a scanning electron beam inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as an observation tool.

Abstract translation: 本发明一般涉及带电粒子成像系统的检测单元。 更具体地，检测单元的一部分可以作为所需的成像条件移入或移出检测系统。 在Wein滤波器（也称为E×B带电粒子分析仪）和可移动检测器设计的帮助下，本发明提供了一种适用于低电流，高分辨率模式和高电流，高通量模式的立体成像系统 。 仅作为示例，本发明已经应用于扫描电子束检查系统。 但是应当认识到，本发明可以应用于使用带电粒子束作为观测工具的其它系统。

公开(公告)号：US20100308236A1

公开(公告)日：2010-12-09

申请号：US12775728

申请日：2010-05-07

Applicant: Charles T. Carlson ,  William T. Weaver

Inventor： Charles T. Carlson ,  William T. Weaver

IPC: H01J37/317 ,  H01J1/54

CPC classification number: H01L21/266 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/024 ,  H01J2237/20214 ,  H01J2237/31711

Abstract: A masking apparatus includes a mask positioned upstream of a target positioned for treatment with ions. The mask is sized relative to the target to cause a first half of the target to be treated with a selective treatment of ions through the mask and a second half of the target to be treated with a blanket treatment of ions unimpeded by the mask during a first time interval. The masking apparatus also includes a positioning mechanism to change a relative position of the mask and the target so that the second half of the target is treated with the selective treatment of ions and the first half of the target is treated with the blanket implant during a second time interval. An ion implanter having the masking apparatus is also provided.

Abstract translation: 掩模装置包括位于被定位用于用离子处理的靶的上游的掩模。 掩模的尺寸相对于目标，以使靶的第一半被选择性地处理离子通过掩模和待处理的靶的第二半被处理，在一个 第一时间间隔。 掩蔽装置还包括定位机构，以改变掩模和靶的相对位置，以便通过选择性处理离子来处理靶的后半部分，并且在 第二时间间隔。 还提供了具有掩蔽装置的离子注入机。

公开(公告)号：US20100243167A1

公开(公告)日：2010-09-30

申请号：US12748702

申请日：2010-03-29

Applicant: Daisuke Hayashi

Inventor： Daisuke Hayashi

IPC: H01L21/465

CPC classification number: H01J37/32568 ,  H01J37/32018 ,  H01J37/32458 ,  H01J37/32577 ,  H01J37/32908 ,  H01J2237/024 ,  H01J2237/1502 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67069

Abstract: A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. In the substrate processing apparatus, a high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber. At least one low dielectric member is provided in a second space between the movable electrode and the end wall on one side of the cylindrical shaped chamber.

Abstract translation: 一种基板处理装置，包括：圆筒形室，其构造成容纳基板; 可移动电极，其能够沿着圆柱形腔室的中心轴线移动; 在圆柱形腔室内面向可动电极的面对电极; 以及将可动电极与圆筒形室的一侧上的端壁连接的可膨胀/收缩的分隔壁。 在基板处理装置中，向可动电极和对置电极之间的第一空间施加高频电力，向其中引入处理气体，并且可动电极不与圆筒形室的侧壁接触。 至少一个低电介质构件设置在可动电极和位于圆柱形腔的一侧的端壁之间的第二空间中。

公开(公告)号：US07655905B2

公开(公告)日：2010-02-02

申请号：US11920132

申请日：2006-05-11

Applicant: Ken Harada ,  Tetsuya Akashi ,  Yoshihiko Togawa ,  Tsuyoshi Matsuda ,  Noboru Moriya

Inventor： Ken Harada ,  Tetsuya Akashi ,  Yoshihiko Togawa ,  Tsuyoshi Matsuda ,  Noboru Moriya

IPC: G21K5/10 ,  G01N23/00

CPC classification number: G01N23/04 ,  H01J37/023 ,  H01J37/067 ,  H01J37/20 ,  H01J37/26 ,  H01J2237/024 ,  H01J2237/1514 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/262 ,  H01J2237/317

Abstract: Charged particle beam equipment having a rotary mechanism in which shift of the observing/machining position incident to the rotary operation of the equipment having the rotary mechanism can be corrected conveniently with high precision in a plane perpendicular to the optical axis of the optical system of charged particle beam or in a slightly inclining plane. An X-Y shift incident to rotation in a plane is determined from the angular information of a rotary mechanism such as a sample holder, diaphragms or biprisms in the charged particle beam equipment, and then driving or controlling is performed to cancel the X-Y shift.

Abstract translation: 具有旋转机构的带电粒子束设备可以在垂直于带电的光学系统的光轴的平面中以高精度方便地校正入射到具有旋转机构的设备的旋转操作的观察/加工位置的偏移 粒子束或稍微倾斜的平面。 根据带电粒子束设备中的样本保持器，隔膜或双棱镜等旋转机构的角度信息确定入射到平面中的X-Y偏移，然后执行驱动或控制以消除X-Y偏移。

公开(公告)号：US07528391B2

公开(公告)日：2009-05-05

申请号：US11615386

申请日：2006-12-22

Applicant: Russell J. Low

Inventor： Russell J. Low

IPC: G21K1/08

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/31711

Abstract: Techniques for reducing contamination during ion implantation is disclosed. In one particular exemplary embodiment, the techniques may be realized by an apparatus for reducing contamination during ion implantation. The apparatus may comprise a platen to hold a workpiece for ion implantation by an ion beam. The apparatus may also comprise a mask, located in front of the platen, to block the ion beam and at least a portion of contamination ions from reaching a first portion of the workpiece during ion implantation of a second portion of the workpiece. The apparatus may further comprise a control mechanism, coupled to the platen, to reposition the workpiece to expose the first portion of the workpiece for ion implantation.

Abstract translation: 公开了用于减少离子注入期间污染的技术。 在一个特定的示例性实施例中，可以通过用于减少离子注入期间的污染的装置来实现这些技术。 该装置可以包括用于通过离子束保持用于离子注入的工件的压板。 该设备还可以包括位于压板前面的掩模，以在工件的第二部分的离子注入期间阻挡离子束并且至少一部分污染物离子到达工件的第一部分。 该装置还可以包括耦合到压板的控制机构，以重新定位工件以暴露工件的第一部分用于离子注入。

公开(公告)号：US07491945B2

公开(公告)日：2009-02-17

申请号：US11038161

申请日：2005-01-21

Applicant: Osamu Nagano

Inventor： Osamu Nagano

IPC: G01N23/00

CPC classification number: H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/024 ,  H01J2237/1536 ,  H01J2237/28 ,  H01J2237/3175

Abstract: A charged particle beam apparatus includes: a charged particle beam generator which generates a charged particle beam; a projection optical system which generates a lens field to focus the charged particle beam on an external substrate; and deflectors arranged so as to surround an optical axis of the charged particle beam; the deflectors generating a deflection field which is superposed on the lens field to deflect the charged particle beam and to control a position to irradiate the substrate, and being configured so that intensity of the deflection field in a direction of the optical axis is changed in accordance with an angle with which the charged particle beam should fall onto the substrate.

Abstract translation: 带电粒子束装置包括：产生带电粒子束的带电粒子束发生器; 投影光学系统，其产生将带电粒子束聚焦在外部基板上的透镜场; 以及偏转器，其布置成围绕带电粒子束的光轴; 所述偏转器产生偏转场，所述偏转场叠加在所述透镜场上以偏转所述带电粒子束并控制照射所述衬底的位置，并且被配置为使得沿所述光轴的方向的所述偏转场的强度根据 与带电粒子束应该落在基底上的角度。

公开(公告)号：US07388217B2

公开(公告)日：2008-06-17

申请号：US11700468

申请日：2007-01-31

Applicant: Herbert Buschbeck ,  Gertraud Lammer ,  Alfred Chalupka ,  Robert Nowak ,  Elmar Platzgummer ,  Gerhard Stengl

Inventor： Herbert Buschbeck ,  Gertraud Lammer ,  Alfred Chalupka ,  Robert Nowak ,  Elmar Platzgummer ,  Gerhard Stengl

IPC: H01J37/302 ,  H01L21/027

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/10 ,  H01J2237/216 ,  H01J2237/30455

Abstract: In a particle-optical projection system a pattern is imaged onto a target by means of energetic electrically charged particles. The pattern is represented in a patterned beam of said charged particles emerging from the object plane through at least one cross-over; it is imaged into an image with a given size and distortion. To compensate for the Z-deviation of the image position from the actual positioning of the target (Z denotes an axial coordinate substantially parallel to the optical axis), without changing the size of the image, the system includes a position detector for measuring the Z-position of several locations of the target, and a controller for calculating modifications of selected lens parameters of the final particle-optical lens and controlling said lens parameters according to said modifications.

Abstract translation: 在粒子光学投影系统中，通过能量带电粒子将图案成像到靶上。 所述图案表示在所述带电粒子的图案化束中，所述带电粒子通过至少一个交叉从对象平面出射; 它被成像为具有给定尺寸和失真的图像。 为了补偿图像位置的Z偏差与目标的实际定位（Z表示基本上平行于光轴的轴向坐标），而不改变图像的尺寸，系统包括用于测量Z的位置检测器 - 位置，以及用于计算最终粒子 - 光学透镜的所选透镜参数的修改并根据所述修改来控制所述透镜参数的控制器。