公开(公告)号：US07531819B2

公开(公告)日：2009-05-12

申请号：US11540469

申请日：2006-09-29

Applicant: William F. DiVergilio ,  Daniel R. Tieger ,  William P. Reynolds ,  Christopher W. Hodgdon ,  Sean Joyce

Inventor： William F. DiVergilio ,  Daniel R. Tieger ,  William P. Reynolds ,  Christopher W. Hodgdon ,  Sean Joyce

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/3171 ,  B08B7/0035 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/022 ,  H01J2237/31705

Abstract: A deposit cleaning system for removing deposits from interior surfaces of ion sources and/or electrodes includes a fluorine source, a throttle mechanism, and a controller. The fluorine source supplies fluorine to the ion source as a cleaning material. The throttle mechanism mitigates loss of fluorine through a source aperture of the ion source by at least partially covering the source aperture. The controller controls the supply and flow rate from the fluorine source to the ion source and also controls the positioning of the throttle mechanism.

Abstract translation: 用于从离子源和/或电极的内表面去除沉积物的沉积物清洁系统包括氟源，节流机构和控制器。 氟源作为清洁材料向离子源供给氟。 节流机构通过至少部分地覆盖源孔径来减轻通过离子源的源孔径的氟的损失。 控制器控制从氟源到离子源的供应和流量，还控制节流机构的定位。

公开(公告)号：US07531792B2

公开(公告)日：2009-05-12

申请号：US11489437

申请日：2006-07-20

Applicant: Hyun-Sub Earm ,  Seung-Se Lee ,  Young-Dae Kim ,  Gon-Su Kang ,  Sung-Yeul An

Inventor： Hyun-Sub Earm ,  Seung-Se Lee ,  Young-Dae Kim ,  Gon-Su Kang ,  Sung-Yeul An

IPC: B01D59/44 ,  H01J49/00 ,  H01J1/50 ,  A61N5/00 ,  G21F5/00 ,  G21F1/00 ,  G21F3/00 ,  G21F7/00 ,  G21C11/00

CPC classification number: H01J49/24 ,  H01J37/05 ,  H01J37/09 ,  H01J37/3171 ,  H01J49/025 ,  H01J49/0495 ,  H01J2237/0225 ,  H01J2237/028 ,  H01J2237/31705

Abstract: In an analyzing chamber for a mass analyzer, a body of the analyzing chamber may include an inlet through which an ion beam enters and an outlet through which the ion beam leaves. A shielding section may be installed on a sidewall. The shielding section may prevent the ion beam traveling along a path in the body from causing damage to the sidewall of the body. A detector may be interposed between the sidewall of the body and the shielding section. The detector may detect an ion beam leaking through the shielding section. Accordingly, damage to the sidewall of the body may be sufficiently reduced and/or prevented.

Abstract translation: 在用于质量分析器的分析室中，分析室的主体可以包括离子束进入的入口和离子束离开的出口。 屏蔽部分可以安装在侧壁上。 屏蔽部分可以防止沿着身体中的路径行进的离子束对身体的侧壁造成损坏。 检测器可以插入在主体的侧壁和屏蔽部分之间。 检测器可以检测通过屏蔽部分泄漏的离子束。 因此，可以充分减少和/或防止对身体侧壁的损坏。

公开(公告)号：US07528389B2

公开(公告)日：2009-05-05

申请号：US11376522

申请日：2006-03-15

Applicant: Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

Inventor： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

IPC: H01J37/244

CPC classification number: H01J37/32412 ,  H01J37/3171 ,  H01J37/3299 ,  H01J2237/31705

Abstract: A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.

Abstract translation: 一种方法和装置旨在在等离子体掺杂系统中提供掺杂剂分布调整解决方案，以满足浓度和结深度要求。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，使得在垂直和横向方向上的浅和突变结被实现，这对于等离子体掺杂系统中的器件缩放至关重要。

公开(公告)号：US07476878B2

公开(公告)日：2009-01-13

申请号：US11567522

申请日：2006-12-06

Applicant: Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

Inventor： Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J37/15 ,  H01J37/18 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/30488 ,  H01J2237/31705 ,  H01L21/266

Abstract: Techniques for reducing effects of photoresist outgassing are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for reducing effects of photoresist outgassing in an ion implanter. The apparatus may comprise a drift tube located between an end-station and an upstream beamline component. The apparatus may also comprise a first variable aperture between the drift tube and the end-station. The apparatus may further comprise a second variable aperture between the drift tube and the upstream beamline component. The first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.

Abstract translation: 公开了减少光阻剂除气效果的技术。 在一个特定的示例性实施例中，技术可以被实现为用于减少离子注入机中的光致抗蚀剂除气的影响的装置。 该装置可以包括位于终端站和上游束线组件之间的漂移管。 该装置还可以包括漂移管和终端站之间的第一可变孔径。 该装置还可以包括漂移管和上游束线部件之间的第二可变孔径。 可以调节第一可变孔径和第二可变孔径以促进差动泵送。

公开(公告)号：US20080164427A1

公开(公告)日：2008-07-10

申请号：US11651107

申请日：2007-01-09

Applicant: Erik J. H. Collart ,  Michael John King

Inventor： Erik J. H. Collart ,  Michael John King

IPC: G21K5/00

CPC classification number: H01J37/3171 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/31705

Abstract: The present invention relates to components in ion implanters having surfaces adjacent to the path of the ion beam through the ion implanter. Such surfaces will be prone to deposition and the present invention addresses problems associated with delamination of deposited material. An ion implanter component is provided that has a surface defining at least in part an ion beam path through the ion implanter, wherein at least a portion of the surface has been roughened. The portion of the surface may be roughened to provide surface features defined at least in part by sharp changes in orientation of adjacent parts of the surface.

Abstract translation: 本发明涉及具有与通过离子注入机的离子束的路径相邻的表面的离子注入机中的部件。 这种表面将易于沉积，并且本发明解决与沉积材料的分层相关的问题。 提供了离子注入机部件，其具有至少部分地限定通过离子注入机的离子束路径的表面，其中表面的至少一部分已被粗糙化。 表面的部分可以被粗糙化以提供至少部分地由表面的相邻部分的取向的急剧变化限定的表面特征。

公开(公告)号：US07351987B2

公开(公告)日：2008-04-01

申请号：US11202100

申请日：2005-08-12

Applicant: Mitsuaki Kabasawa ,  Mitsukuni Tsukihara ,  Hiroshi Sogabe

Inventor： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara ,  Hiroshi Sogabe

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/09 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. According to this invention, a hybrid angular energy filter generating both electric and magnetic fields to bend trajectories is provided as the energy filtering device. A pair of multi-surface energy slit units each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.

Abstract translation: 照射系统包括光束产生源，质量分析装置，光束变换器，用于使光束往复摆动的扫描偏转器，光束并行化装置，加速/减速装置以及能量过滤装置。 根据本发明，提供了产生电场和磁场以弯曲轨迹的混合角能量滤波器作为能量过滤装置。 在混合角能量滤波器的下游侧还设置有一对多表面能量狭缝单元，其具有可根据用于照射的离子种类在其间切换的多个能量狭缝。 在诸如中性粒子，不同种类的掺杂剂，具有不同能量的离子，金属和灰尘颗粒的污染物的量非常小的条件下，可以从具有低能量到高能量的大电流束选择性地照射目标晶片 。

公开(公告)号：US20070268650A1

公开(公告)日：2007-11-22

申请号：US11436471

申请日：2006-05-18

Applicant: Scott Pietzsch

Inventor： Scott Pietzsch

IPC: H01T23/00

CPC classification number: H01L21/6833 ,  H01J2237/0048 ,  H01J2237/2007 ,  H01J2237/31705 ,  H01L21/67011

Abstract: An ion implanter includes an electrostatic chuck. The electrostatic chuck is configured to repel charged particles from a surface of the electrostatic chuck to limit deposits of the charged particles on the surface when the electrostatic chuck is not supporting any workpiece. An electrostatic chuck including a dielectric layer and at least one electrode is also provided. The at least one electrode is configured to accept a DC voltage signal to produce a first charge to repel charged particles from the dielectric layer when the dielectric layer is not supporting any workpiece to thereby limit deposits of the charged particles on the dielectric layer.

Abstract translation: 离子注入机包括静电卡盘。 静电卡盘被配置为当静电卡盘不支撑任何工件时，从静电卡盘的表面排出带电粒子以限制带电粒子沉积在表面上。 还提供了包括电介质层和至少一个电极的静电卡盘。 所述至少一个电极被配置为当所述电介质层不支撑任何工件从而限制所述电介质层上带电粒子的沉积时，接受DC电压信号以产生第一电荷以从所述电介质层排斥带电粒子。

公开(公告)号：US20070241276A1

公开(公告)日：2007-10-18

申请号：US11289885

申请日：2005-11-30

Applicant: Russell Low ,  Joseph Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

Inventor： Russell Low ,  Joseph Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

IPC: B01D59/44

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/31705 ,  H01L22/12

Abstract: A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

Abstract translation: 公开了一种用于确定离子束污染的系统，方法和程序产品。 在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下，可以测量离子束中的第三离子并基于量 测量的第三离子，与预期离子相比的污染物离子的相对量。 污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

公开(公告)号：US20070176115A1

公开(公告)日：2007-08-02

申请号：US11648282

申请日：2006-12-29

Applicant: Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

Inventor： Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

IPC: H01J27/00

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.

公开(公告)号：US20070108394A1

公开(公告)日：2007-05-17

申请号：US11527994

申请日：2006-09-26

Applicant: Thomas Horsky

Inventor： Thomas Horsky

IPC: B01D59/44

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: An ion source for an ion implantation system includes a vaporizer for producing a process gas; an electron source for generating an electron beam to ionize the process gas within a ionization chamber. The ionization chamber includes an extraction aperture for extracting an ion beam. The ion source, in accordance with the preset invention, is configured to be able to be retrofit into the design space of existing ion sources in, for example, Bernas source-based ion implanters.

Abstract translation: 用于离子注入系统的离子源包括用于产生处理气体的蒸发器; 用于产生电离束以电离离子化室内的工艺气体的电子源。 电离室包括用于提取离子束的提取孔。 根据本发明的离子源被配置为能够改造为例如基于伯纳斯源的离子注入器中的现有离子源的设计空间。