Ion implantation apparatus
    91.
    发明授权
    Ion implantation apparatus 有权
    离子注入装置

    公开(公告)号:US06573517B1

    公开(公告)日:2003-06-03

    申请号:US09629622

    申请日:2000-07-31

    CPC classification number: G21K1/08 H01J37/147 H01J37/3171 H01J2237/31705

    Abstract: An ion injecting apparatus has an ion source, a mass-analyzing magnet, an accelerating/decelerating element, and deflecting elements. The mass analyzing magnet mass-analyzes an ion beam extracted from the ion source. The accelerating/de-celerating element accelerates and decelerates the ion beam at a post-stage. The deflecting elements are arranged between the mass analyzing magnet and the accelerating/decelerating element. Each direction angle of the deflecting element is determined such that a final beam trajectory in the predetermined area before being introduced into a wafer substrate is matched to each other in both an operating mode and a non-operating mode of the deflecting elements.

    Abstract translation: 离子注入装置具有离子源,质量分析用磁体,加速/减速元件以及偏转元件。 质量分析磁体对从离子源提取的离子束进行质量分析。 加速/去纤维元件在后期加速和减速离子束。 偏转元件布置在质量分析磁体和加速/减速元件之间。 偏转元件的每个方向角被确定为使得在被引入晶片衬底之前的预定区域中的最终光束轨迹在偏转元件的操作模式和非操作模式中彼此匹配。

    Deflection arrangement for separating two particle beams
    92.
    发明授权
    Deflection arrangement for separating two particle beams 有权
    用于分离两个粒子束的偏转布置

    公开(公告)号:US06509569B1

    公开(公告)日:2003-01-21

    申请号:US09690425

    申请日:2000-10-17

    Applicant: Jurgen Frosien

    Inventor: Jurgen Frosien

    CPC classification number: H01J37/147 H01J37/05

    Abstract: A deflection arrangement for separating two parties beams has an electrostatic deflector and a magnetic deflector having a common optical axis and generating crossed electrostatic and magnetic deflection fields, wherein the two particle beams pass the deflection arrangements from opposite sides. The two deflectors are adapted to deflect one of the two beams achromatically by an angle s and the ocher beam by an angle &bgr;≧3&agr; with respect to its angle of incidence, respectively.

    Abstract translation: 用于分离双方光束的偏转装置具有静电偏转器和具有公共光轴的磁偏转器并产生交叉的静电和磁偏转场,其中两个粒子束从相对侧通过偏转装置。 两个偏转器适于使两个光束中的一个光束相对于其入射角分别以角度s和赭色光束成角度β> 3alpha的方式偏转。

    Charged-particle-beam exposure device and charged-particle-beam exposure method
    94.
    发明授权
    Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
    带电粒子束曝光装置和带电粒子束曝光方法

    公开(公告)号:US06420700B2

    公开(公告)日:2002-07-16

    申请号:US09826913

    申请日:2001-04-06

    Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

    Abstract translation: 通过将晶片引导到晶片,通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤:在不同的高度处布置多个第一标记,将带电粒子束聚焦在每个 通过使用设置在偏转器上方的聚焦线圈的第一标记,获得每个第一标记的聚焦距离,获得每个第一标记的偏转效率校正系数,并且使用焦距的线性函数来近似偏转 - 效率校正系数,以获得针对焦距的任意值的偏转效率校正系数。 还提出了一种用于执行该方法的装置。

    Scanning electron microscope
    95.
    发明申请
    Scanning electron microscope 失效
    扫描电子显微镜

    公开(公告)号:US20010010357A1

    公开(公告)日:2001-08-02

    申请号:US09768356

    申请日:2001-01-25

    Applicant: HITACHI, LTD.

    Abstract: The present invention is intended to prevent the deterioration of resolution due to increase in off-axis aberration resulting from the deviation of a primary electron bean from the optical axis of a scanning electron microscope. A scanning electron microscope is provided with an image shifting deflector system including two deflectors disposed respectively at upper and lower stages. The deflector disposed at the lower stage is a multipole electrostatic deflecting electrode and is disposed in an objective. Even if the distance of image shifting is great, an image of a high resolution can be formed and dimensions can be measured in a high accuracy. The SEM is able to achieving precision inspection at a high throughput when applied to inspection in semiconductor device fabricating processes that process a wafer having a large area and provided with very minute circuit elements.

    Abstract translation: 本发明旨在防止由于一次电子束与扫描型电子显微镜的光轴的偏离引起的离轴像差的增加而导致的分辨率的劣化。 扫描电子显微镜设置有分别设置在上部和下部的两个偏转器的图像偏转偏转器系统。 设置在下级的偏转器是多极静电偏转电极,并且设置在物镜中。 即使图像偏移的距离大,也可以形成高分辨率的图像,并且可以高精度地测量尺寸。 当在用于处理具有大面积的晶片并且具有非常微小的电路元件的半导体器件制造工艺中进行检查时,SEM能够以高产量实现精密检查。

    Deflection system
    96.
    发明授权
    Deflection system 失效
    偏转系统

    公开(公告)号:US5847399A

    公开(公告)日:1998-12-08

    申请号:US876876

    申请日:1997-06-16

    CPC classification number: H01J37/147 H01J37/09 H01J2237/0264

    Abstract: A deflection system (6) for a charged particle beam (2), in particular for rrangement in an objective lens for a charged particle beam device with a deflection means (60) for generating a magnetic field acting on the charged particle beam (2) and a shield (61) for avoiding eddy currents, which surrounds the deflection means and guides the formed outer magnetic field. The shield (61) consists, transversely to the direction of the charged particle beam (2), of at least one soft magnetic layer which is preferably formed as a strip material and rolled up to a cylinder together with an electrically insulating layer.

    Abstract translation: 一种用于带电粒子束(2)的偏转系统(6),特别用于布置在用于产生作用在带电粒子束(2)上的磁场的偏转装置(60)的带电粒子束装置的物镜中, 以及用于避免涡流的屏蔽件(61),其围绕偏转装置并引导所形成的外部磁场。 至少一个软磁性层的横向于带电粒子束(2)的方向的屏蔽层(61),其优选地形成为带状材料并与电绝缘层一起卷绕到圆柱体上。

    Electron beam deflecting apparatus with reduced settling time period
    97.
    发明授权
    Electron beam deflecting apparatus with reduced settling time period 失效
    减少沉降时间的电子束偏转装置

    公开(公告)号:US5530250A

    公开(公告)日:1996-06-25

    申请号:US325871

    申请日:1994-10-19

    Abstract: In an electron beam deflecting apparatus including an electromagnetic deflection unit and a driver for driving the electromagnetic deflection unit in accordance with a main deflection amount, when a current main deflection amount is different from a previous main deflection amount, a corrected main deflection amount, which is an opposite value of the previous main deflection amount with respect to the current main deflection amount, is calculated as the main deflection amount.

    Abstract translation: 在包括电磁偏转单元和用于根据主偏转量驱动电磁偏转单元的驱动器的电子束偏转装置中,当当前主偏转量与先前主偏转量不同时,修正主偏转量, 是相对于当前主偏转量的先前主偏转量的相反值,被计算为主偏转量。

    System and method for magnetic scanning, accelerating, and implanting of
an ion beam

    公开(公告)号:US5483077A

    公开(公告)日:1996-01-09

    申请号:US383422

    申请日:1995-02-03

    Abstract: Deflection apparatus is shown for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, having a magnetic structure formed of laminations with thickness in range between 0.2 and 1 millimeter. Additionally, a compensator is shown with similar laminated structures with resonant excitation circuit, operating at 20 Hz or higher, in phase locked relationship with the frequency of the previously deflected beam. Furthermore, features are shown which have broader applicability to producing strong magnetic field in magnetic gap. Among the numerous important features shown are special laminated magnetic structures, including different sets of crosswise laminations in which the field in one lamination of one set is distributed into multiplicity of laminations of the other set of coil-form structures, field detection means and feedback control system, cooling plate attached in thermal contact with number of lamination layers. Surfaces on the entry and exit sides of the compensator magnetic structure have cooperatively selected shapes to increase the length of path exposed to the force field dependently with deflection angle to compensate for contribution to deflection angle caused by higher order components. The entry and exit surfaces of the magnetic scanner and compensator structures cooperating to produce desired beam profile and desired limit on angular deviation of ions within the beam. Also shown is an accelerator comprising a set of accelerator electrodes having slotted apertures, a suppressor electrode at the exit of the electrostatic accelerator, a post-accelerator analyzer magnet having means for adjusting the angle of incidence by laterally moving the post-accelerator analyzer magnet, and a magnet to eliminate aberration created by the post-accelerator analyzer magnet. In the case of use of a spinning substrate carrier for scanning in one dimension, the excitation wave form of the scanner relates changes in scan velocity in inverse dependence with changes in the radial distance of an implant point from the rotation axis. Also an oxygen implantation method is shown with 50 mA ion beam current, the ion beam energy above 100 KeV, and the angular velocity of a rotating carrier above 50 rpm.

    Method and device for the deflection of a beam
    99.
    发明授权
    Method and device for the deflection of a beam 失效
    用于偏转梁的方法和装置

    公开(公告)号:US5038044A

    公开(公告)日:1991-08-06

    申请号:US577467

    申请日:1990-09-04

    CPC classification number: H01J37/147 H01J37/3053

    Abstract: In order to utilize a magnet arrangement having a magnetic flux density field for beam guidance in the deflection of a beam of monopolar charged particles, regions of the field having curved field lines, are modified to significantly linearize the field lines in the area of the beam. An additional flux density field is superimposed on the primary flux density field so that the field lines interact in an harmonic synthesis and so that the field lines of the resulting field in the region of interest, extend linearly. In this way, the deflection force on the beam is essentially independent of the beam position in the field direction and in the linearized region.

    Abstract translation: 为了利用具有磁通密度场的磁体布置,用于在单极带电粒子束的偏转中的光束引导,具有弯曲场线的场的区域被修改,以使束的区域中的场线显着线性化 。 附加的磁通密度场被叠加在主磁通密度场上,使得场线在谐波合成中相互作用,并且使感兴趣区域中的所得场的场线线性延伸。 以这种方式,光束上的偏转力基本上与场方向和线性化区域中的光束位置无关。

    Ion beam scanning method and apparatus
    100.
    发明授权
    Ion beam scanning method and apparatus 失效
    离子束扫描方法和装置

    公开(公告)号:US4922106A

    公开(公告)日:1990-05-01

    申请号:US138925

    申请日:1987-11-06

    CPC classification number: H01J37/3171 H01J37/147

    Abstract: An ion beam scanning method and apparatus produces a parallel scanned ion beam with a magnetic deflector having in one instance wedge-shaped pole pieces that develop a uniform magnetic field. A beam accelerator for the scanned beam has a slot-shaped passage which the scanned beam traverses. The beam scan and the beam traverse over a target object are controlled to attain selected beam current, and correspondingly ion dose, on a target object.

    Abstract translation: PCT No.PCT / US87 / 00804 Sec。 371日期1987年11月6日 102(e)1987年11月6日PCT PCT 1987年4月8日PCT公布。 公开号WO87 / 06391 日期为1987年10月22日。离子束扫描方法和装置产生具有磁导向器的平行扫描离子束,该偏转器在一个实例中形成均匀磁场的楔形极片。 用于扫描光束的光束加速器具有扫描光束穿过的槽形通道。 控制光束扫描和横过目标物体的光束,以获得目标对象上的所选束流,并相应地离子剂量。

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