Abstract:
An ion injecting apparatus has an ion source, a mass-analyzing magnet, an accelerating/decelerating element, and deflecting elements. The mass analyzing magnet mass-analyzes an ion beam extracted from the ion source. The accelerating/de-celerating element accelerates and decelerates the ion beam at a post-stage. The deflecting elements are arranged between the mass analyzing magnet and the accelerating/decelerating element. Each direction angle of the deflecting element is determined such that a final beam trajectory in the predetermined area before being introduced into a wafer substrate is matched to each other in both an operating mode and a non-operating mode of the deflecting elements.
Abstract:
A deflection arrangement for separating two parties beams has an electrostatic deflector and a magnetic deflector having a common optical axis and generating crossed electrostatic and magnetic deflection fields, wherein the two particle beams pass the deflection arrangements from opposite sides. The two deflectors are adapted to deflect one of the two beams achromatically by an angle s and the ocher beam by an angle &bgr;≧3&agr; with respect to its angle of incidence, respectively.
Abstract:
An apparatus is provided for one-dimensional magnetic scanning or switching of a charged particle beam. The apparatus can be extended to two dimensions at the cost of added complexity.
Abstract:
A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
Abstract:
The present invention is intended to prevent the deterioration of resolution due to increase in off-axis aberration resulting from the deviation of a primary electron bean from the optical axis of a scanning electron microscope. A scanning electron microscope is provided with an image shifting deflector system including two deflectors disposed respectively at upper and lower stages. The deflector disposed at the lower stage is a multipole electrostatic deflecting electrode and is disposed in an objective. Even if the distance of image shifting is great, an image of a high resolution can be formed and dimensions can be measured in a high accuracy. The SEM is able to achieving precision inspection at a high throughput when applied to inspection in semiconductor device fabricating processes that process a wafer having a large area and provided with very minute circuit elements.
Abstract:
A deflection system (6) for a charged particle beam (2), in particular for rrangement in an objective lens for a charged particle beam device with a deflection means (60) for generating a magnetic field acting on the charged particle beam (2) and a shield (61) for avoiding eddy currents, which surrounds the deflection means and guides the formed outer magnetic field. The shield (61) consists, transversely to the direction of the charged particle beam (2), of at least one soft magnetic layer which is preferably formed as a strip material and rolled up to a cylinder together with an electrically insulating layer.
Abstract:
In an electron beam deflecting apparatus including an electromagnetic deflection unit and a driver for driving the electromagnetic deflection unit in accordance with a main deflection amount, when a current main deflection amount is different from a previous main deflection amount, a corrected main deflection amount, which is an opposite value of the previous main deflection amount with respect to the current main deflection amount, is calculated as the main deflection amount.
Abstract:
Deflection apparatus is shown for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, having a magnetic structure formed of laminations with thickness in range between 0.2 and 1 millimeter. Additionally, a compensator is shown with similar laminated structures with resonant excitation circuit, operating at 20 Hz or higher, in phase locked relationship with the frequency of the previously deflected beam. Furthermore, features are shown which have broader applicability to producing strong magnetic field in magnetic gap. Among the numerous important features shown are special laminated magnetic structures, including different sets of crosswise laminations in which the field in one lamination of one set is distributed into multiplicity of laminations of the other set of coil-form structures, field detection means and feedback control system, cooling plate attached in thermal contact with number of lamination layers. Surfaces on the entry and exit sides of the compensator magnetic structure have cooperatively selected shapes to increase the length of path exposed to the force field dependently with deflection angle to compensate for contribution to deflection angle caused by higher order components. The entry and exit surfaces of the magnetic scanner and compensator structures cooperating to produce desired beam profile and desired limit on angular deviation of ions within the beam. Also shown is an accelerator comprising a set of accelerator electrodes having slotted apertures, a suppressor electrode at the exit of the electrostatic accelerator, a post-accelerator analyzer magnet having means for adjusting the angle of incidence by laterally moving the post-accelerator analyzer magnet, and a magnet to eliminate aberration created by the post-accelerator analyzer magnet. In the case of use of a spinning substrate carrier for scanning in one dimension, the excitation wave form of the scanner relates changes in scan velocity in inverse dependence with changes in the radial distance of an implant point from the rotation axis. Also an oxygen implantation method is shown with 50 mA ion beam current, the ion beam energy above 100 KeV, and the angular velocity of a rotating carrier above 50 rpm.
Abstract:
In order to utilize a magnet arrangement having a magnetic flux density field for beam guidance in the deflection of a beam of monopolar charged particles, regions of the field having curved field lines, are modified to significantly linearize the field lines in the area of the beam. An additional flux density field is superimposed on the primary flux density field so that the field lines interact in an harmonic synthesis and so that the field lines of the resulting field in the region of interest, extend linearly. In this way, the deflection force on the beam is essentially independent of the beam position in the field direction and in the linearized region.
Abstract:
An ion beam scanning method and apparatus produces a parallel scanned ion beam with a magnetic deflector having in one instance wedge-shaped pole pieces that develop a uniform magnetic field. A beam accelerator for the scanned beam has a slot-shaped passage which the scanned beam traverses. The beam scan and the beam traverse over a target object are controlled to attain selected beam current, and correspondingly ion dose, on a target object.