摘要:
A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.
摘要:
Deflection apparatus is shown for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, having a magnetic structure formed of laminations with thickness in range between 0.2 and 1 millimeter. Additionally, a compensator is shown with similar laminated structures with resonant excitation circuit, operating at 20 Hz or higher, in phase locked relationship with the frequency of the previously deflected beam. Furthermore, features are shown which have broader applicability to producing strong magnetic field in magnetic gap. Among the numerous important features shown are special laminated magnetic structures, including different sets of crosswise laminations in which the field in one lamination of one set is distributed into multiplicity of laminations of the other set of coil-form structures, field detection means and feedback control system, cooling plate attached in thermal contact with number of lamination layers. Surfaces on the entry and exit sides of the compensator magnetic structure have cooperatively selected shapes to increase the length of path exposed to the force field dependently with deflection angle to compensate for contribution to deflection angle caused by higher order components. The entry and exit surfaces of the magnetic scanner and compensator structures cooperating to produce desired beam profile and desired limit on angular deviation of ions within the beam. Also shown is an accelerator comprising a set of accelerator electrodes having slotted apertures, a suppressor electrode at the exit of the electrostatic accelerator, a post-accelerator analyzer magnet having means for adjusting the angle of incidence by laterally moving the post-accelerator analyzer magnet, and a magnet to eliminate aberration created by the post-accelerator analyzer magnet. In the case of use of a spinning substrate carrier for scanning in one dimension, the excitation wave form of the scanner relates changes in scan velocity in inverse dependence with changes in the radial distance of an implant point from the rotation axis. Also an oxygen implantation method is shown with 50 mA ion beam current, the ion beam energy above 100 KeV, and the angular velocity of a rotating carrier above 50 rpm.
摘要:
A first order achromatic magnetic deflection system for use in conjunction with a charged particle accelerator, is realized from a stepped gap manget wherein a charged particle propagated through the system is subject to at least two adjacent homogenous magnetic fields in traversing one-half of a symmetric trajectory through the system.
摘要:
Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.
摘要:
A process for an intensity-modulated proton therapy of a predetermined volume within an object includes discretising the predetermined volume into a number of iso-energy layers each corresponding to a determined energy of the proton beam. A final target dose distribution is determined for each iso-energy layer. The final target dose distribution or at least a predetermined part of this final target dose distribution is applied by parallel beam scanning by controlling the respective beam sweepers, thereby scanning one iso-energy layer after the other using an intensity-modulated proton beam while scanning a predetermined iso-energy layer.
摘要:
An electrodeless discharge lamp has a magnetic core 3, an induction coil 5, and a fixation member 7. The fixation member 7 has an elongation portion 7b extending in a direction along an axial line of the magnetic core 3, a holding portion 7c for holding the magnetic core 3 positioned closer to the magnetic core 3 than the elongation portion 7b, and hook portions 7d and 7e to which a winding wire 7 is hooked so as to be inflected. The hook portions 7d and 7e positioned away from a boundary between the holding portion 7c and magnetic core 3 toward the elongation portion 7b by a distance between once and twice of a diameter of the winding wire.
摘要:
An electrodeless lamp and process for emitting ultraviolet and/or vacuum ultraviolet radiation comprises an envelope formed of an ultra-pure and/or low-defect quartz material and an ultraviolet and/or vacuum ultraviolet emissive material disposed in the interior region of the envelope. The electrodeless lamp formed of the ultra-pure and/or low-defect quartz material minimizes degradation during use.
摘要:
A cathode assembly and an electrical circuit that includes a conductor physically parallel to and electrically in series with a filament so that when the circuit is energized the magnetic fields produced by the current flowing in the filament and the conductor oppose each other, thereby decreasing the dispersing effect of the filament magnetic field on a portion of the electrons emitted from the filament. The diameter of the conductor is sufficiently larger than the diameter of the filament so that only the filament emits electrons when the circuit is energized.