PLASMA PROCESSING APPARATUS AND CONTROL METHOD

    公开(公告)号:US20230162946A1

    公开(公告)日:2023-05-25

    申请号:US18101468

    申请日:2023-01-25

    Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

    CHARGED PARTICLE DEVICE, CHARGED PARTICLE IRRADIATION METHOD, AND ANALYSIS DEVICE

    公开(公告)号:US20180174795A1

    公开(公告)日:2018-06-21

    申请号:US15736098

    申请日:2015-06-23

    Applicant: HITACHI, LTD.

    Inventor: Teruo KOHASHI

    Abstract: Provided is an optical system which can adjust, including increase, a spin polarization degree of an electron beam. Disclosed is a charged particle device having a charged particle source which generates charged particles, a sample table on which a sample is placed, and a transport optical system which is disposed between the charged particle source and the sample table and transports the charged particles as charged particle flux toward the sample table. In this device, the transport optical system includes a magnetic field generating section which generates a magnetic field having a vertical component to a course of the charged particle flux, an electric field generating section which generates an electric field having a vertical component to the course of the charged particle flux, and a shielding section which shields at least a part of the charged particle flux passed through the magnetic field generating section and the electric field generating section. Moreover, the vertical component of the magnetic field has a magnetic field gradient, and the vertical component of the electric field gives an electrostatic force in a direction opposite to a Lorentz force received by the charged particle flux.

    Substrate treatment apparatus
    99.
    发明授权

    公开(公告)号:US09818572B2

    公开(公告)日:2017-11-14

    申请号:US14020669

    申请日:2013-09-06

    Inventor: Ho Chul Kang

    CPC classification number: H01J37/04 C23C16/5096 H01J37/32091 H01J37/32577

    Abstract: A substrate treatment apparatus includes a chamber providing a reaction region and including first and second sides facing each other, a module connected to the first side, an upper electrode in the reaction region, a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side, and a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point.

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