公开(公告)号：US20250149296A1

公开(公告)日：2025-05-08

申请号：US19001893

申请日：2024-12-26

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a gas supplier for supplying gas into the chamber, a radio-frequency power supply for supplying a source radio-frequency power to generate plasma, and a bias power supply for generating electric bias. During a first processing period, the radio-frequency power supply uses frequencies, which are included in a first frequency set determined to reduce a degree of reflection of the source radio-frequency power from a load, as source frequencies of the source radio-frequency power for each of phase periods in a waveform period of the electric bias. During a second processing period, the radio-frequency power supply uses frequencies, which are included in a second frequency set different from the first frequency set and determined to reduce the degree of reflection, as the source frequencies for each of the phase periods.

公开(公告)号：US20250014872A1

公开(公告)日：2025-01-09

申请号：US18887050

申请日：2024-09-17

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing method includes (a) generating plasma in a chamber of a plasma processing apparatus including a substrate support provided in the chamber and supporting a substrate placed thereon, (b) applying a voltage pulse from a bias power supply to a bias electrode of the substrate support in order to draw ions from the plasma into the substrate, and (c) repeating (b). In (c), a duration length of the voltage pulse is changed to change a potential of the substrate.

公开(公告)号：US20240355584A1

公开(公告)日：2024-10-24

申请号：US18761386

申请日：2024-07-02

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Gen TAMAMUSHI ,  Masahiro INOUE

IPC: H01J37/32

CPC classification number: H01J37/32155 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32715

Abstract: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.

公开(公告)号：US20240304418A1

公开(公告)日：2024-09-12

申请号：US18665826

申请日：2024-05-16

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J2237/327

Abstract: In a plasma processing apparatus described herein, a bias power supply supplies an electric bias energy having a bias frequency to a substrate support unit at a timing specified by a first clock signal. A radio-frequency power supply outputs a source radio-frequency power having a source frequency adjusted at a timing specified by a second clock signal, when the electric bias energy is being supplied to the substrate support unit. The second clock signal has a frequency higher than the bias frequency, and is synchronized with the first clock signal.

公开(公告)号：US20240120176A1

公开(公告)日：2024-04-11

申请号：US18392294

申请日：2023-12-21

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32155 ,  H01J37/32174

Abstract: In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

公开(公告)号：US20230077143A1

公开(公告)日：2023-03-09

申请号：US17940508

申请日：2022-09-08

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Junji ISHIBASHI ,  Fumiaki ARIYOSHI ,  Sho HAKOZAKI ,  Fumitoshi KUMAGAI

IPC: H01J37/32

Abstract: A plasma processing apparatus disclosed herein includes a chamber, a substrate support, an upper electrode, and at least one power supply. The chamber provides a processing space therein. The substrate support is provided in the chamber. The upper electrode configures a shower head that introduces a gas into the processing space from above the processing space. The upper electrode includes a first electrode and a second electrode. The first electrode provides a plurality of first gas holes opened toward the processing space. The second electrode is provided directly or indirectly on the first electrode and provides a plurality of second gas holes communicating with the plurality of first gas holes. The at least one power supply is configured to set a potential of the second electrode to a potential higher than a potential of the first electrode.

公开(公告)号：US20230050506A1

公开(公告)日：2023-02-16

申请号：US17879803

申请日：2022-08-03

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: There is a plasma processing apparatus comprising: a chamber; a substrate support configured to support a substrate and an edge ring; high-frequency power supply configured to generate first high-frequency power via the substrate and second high-frequency power via the edge ring; and bias power supply configured to generate first electric bias energy supplied to the substrate and second electric bias energy supplied to the edge ring, wherein the first electric bias energy and the second electric bias energy have a waveform repeatedly at a cycle, the cycle includes a first period in which voltage of each of the first and second electric bias energies has a positive level with respect to an average value of the voltage within the cycle, and a second period in which the voltage of each of the first and second electric bias energies has a negative level with respect to the average value.

公开(公告)号：US20220108878A1

公开(公告)日：2022-04-07

申请号：US17483866

申请日：2021-09-24

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A disclosed plasma processing method includes a direct-current power source configured to generate a negative direct-current voltage. A bias electrode of a substrate support provided in the chamber is alternately connected to the direct-current power source and the ground. A time until a potential of the bias electrode reaches a ground potential after the bias electrode is connected to the ground is set to be longer than a time until the potential of the bias electrode reaches the negative direct-current voltage after the direct-current power source is connected to the bias electrode.

公开(公告)号：US20210233745A1

公开(公告)日：2021-07-29

申请号：US17149928

申请日：2021-01-15

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: In a disclosed plasma processing system, radio frequency power is supplied in a first period to generate plasma, and the power lever of the radio frequency power is set to a reduced power level in a second period. In the second period, bias power is applied to a lower electrode of a substrate support. The bias power changes a potential of the substrate within each cycle that is defined at a second frequency. In the second period, a direct-current voltage is applied to the upper electrode. The direct-current voltage is set such that within each cycle that is defined at the second frequency, a polarity thereof in a first sub-period is negative and an absolute value thereof in the first sub-period is larger than an absolute value thereof in a second sub-period.

公开(公告)号：US20210082669A1

公开(公告)日：2021-03-18

申请号：US17105118

申请日：2020-11-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Yoshinobu OHYA ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.