公开(公告)号：US20230077143A1

公开(公告)日：2023-03-09

申请号：US17940508

申请日：2022-09-08

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Junji ISHIBASHI ,  Fumiaki ARIYOSHI ,  Sho HAKOZAKI ,  Fumitoshi KUMAGAI

IPC: H01J37/32

Abstract: A plasma processing apparatus disclosed herein includes a chamber, a substrate support, an upper electrode, and at least one power supply. The chamber provides a processing space therein. The substrate support is provided in the chamber. The upper electrode configures a shower head that introduces a gas into the processing space from above the processing space. The upper electrode includes a first electrode and a second electrode. The first electrode provides a plurality of first gas holes opened toward the processing space. The second electrode is provided directly or indirectly on the first electrode and provides a plurality of second gas holes communicating with the plurality of first gas holes. The at least one power supply is configured to set a potential of the second electrode to a potential higher than a potential of the first electrode.