Etchant-free methods of producing a gap between two layers, and devices produced thereby
    92.
    发明授权
    Etchant-free methods of producing a gap between two layers, and devices produced thereby 有权
    产生两层之间的间隙的无蚀刻方法,以及由此产生的装置

    公开(公告)号:US08704316B2

    公开(公告)日:2014-04-22

    申请号:US13481672

    申请日:2012-05-25

    摘要: Etchant-free methods of producing a gap between two materials are provided. Aspects of the methods include providing a structure comprising a first material and a second material, and subjecting the structure to conditions sufficient to cause a decrease in the volume of at least a portion of at least one of the first material and the second material to produce a gap between the first material and the second material. Also provided are devices produced by the methods (e.g., MEMS and NEMS devices), structures used in the methods and methods of making such structures.

    摘要翻译: 提供了无腐蚀性的两种材料之间产生间隙的方法。 方法的方面包括提供包括第一材料和第二材料的结构,并使结构经受足以引起第一材料和第二材料中的至少一种的至少一部分的体积减小的条件以产生 第一材料和第二材料之间的间隙。 还提供了通过方法(例如,MEMS和NEMS装置)制造的装置,用于制造这种结构的方法和方法中使用的结构。

    Method for etching a sacrificial layer for a micro-machined structure
    93.
    发明授权
    Method for etching a sacrificial layer for a micro-machined structure 失效
    蚀刻用于微加工结构的牺牲层的方法

    公开(公告)号:US08541313B2

    公开(公告)日:2013-09-24

    申请号:US12090212

    申请日:2006-10-25

    IPC分类号: B81C1/00 B81C3/00 B81B7/00

    摘要: A method of etching a sacrificial layer for a micro-machined structure, the sacrificial layer positioned between a layer of a first material and a layer of a second material, the etching being carried out by an etching agent. The method includes: providing at least one species having an affinity for the etching agent greater than that of the layers of first material and second material and less than or equal to that of the sacrificial layer; and then etching the sacrificial layer by the etching agent, the etching being carried out to eliminate at least partially the sacrificial layer and then to eliminate at least partially the species.

    摘要翻译: 蚀刻用于微加工结构的牺牲层的方法,所述牺牲层位于第一材料层和第二材料层之间,所述蚀刻由蚀刻剂进行。 该方法包括:提供对蚀刻剂具有大于第一材料和第二材料的层的亲和力的至少一种物质,并且小于或等于牺牲层的物质; 然后通过蚀刻剂蚀刻牺牲层,进行蚀刻以至少部分地消除牺牲层,然后至少部分地去除该物质。

    DISK TYPE MEMS RESONATOR
    94.
    发明申请
    DISK TYPE MEMS RESONATOR 审中-公开
    盘式MEMS谐振器

    公开(公告)号:US20130134837A1

    公开(公告)日:2013-05-30

    申请号:US13814738

    申请日:2011-06-13

    IPC分类号: H01L41/047

    摘要: In order to provide complete removal of a sacrificial layer on a bottom surface of a disk during an etching process, without leaving residue, a disk type resonator of an electrostatic drive type includes a disk type resonator structure; a pair of drive electrodes at a predetermined gap from an outer peripheral portion of the disk type resonator structure and disposed at both sides of the resonator structure so as to face each other; a unit for applying an alternating current bias voltage with a same phase to the drive electrodes; and a detection unit that obtains an output corresponding to an electrostatic capacitance between the disk type resonator structure and the drive electrodes. The disk type resonator structure has a through hole in the center of the disk and is vibrated in a wineglass mode.

    摘要翻译: 为了在蚀刻工艺期间在盘的底表面上完全去除牺牲层而不留下残留物,静电驱动型的盘式谐振器包括盘型谐振器结构; 一对驱动电极,与盘式谐振器结构的外周部隔开规定的间隔配置在谐振器结构的两侧,以彼此面对; 用于向驱动电极施加具有相同相位的交流偏置电压的单元; 以及检测单元,其获得与盘型谐振器结构和驱动电极之间的静电电容相对应的输出。 盘型谐振器结构在盘的中心具有通孔,并以葡萄酒杯模式振动。

    Method of Manufacturing a Device with a Cavity
    96.
    发明申请
    Method of Manufacturing a Device with a Cavity 有权
    制造具有腔体的装置的方法

    公开(公告)号:US20130069178A1

    公开(公告)日:2013-03-21

    申请号:US13673494

    申请日:2012-11-09

    IPC分类号: H01L29/84 H01L21/50 H01L21/02

    摘要: The invention relates to a micro-device with a cavity, the micro-device comprising a substrate, the method comprising steps of: A) providing the substrate, having a surface and comprising a sacrificial oxide region at the surface; B) covering the sacrificial oxide region with a porous layer being permeable to a vapor HF etchant, and C) selectively etching the sacrificial oxide region through the porous layer using the vapor HF etchant to obtain the cavity. This method may be used in the manufacture of various micro-devices with a cavity, i.e. MEMS devices, and in particular in the encapsulation part thereof, and semiconductor devices, and in particular the BEOL-part thereof.

    摘要翻译: 本发明涉及具有空腔的微器件,微器件包括衬底,该方法包括以下步骤:A)提供具有表面并且在表面包括牺牲氧化物区域的衬底; B)覆盖牺牲氧化物区域,其中多孔层可透过蒸气HF蚀刻剂,以及C)使用蒸气HF蚀刻剂选择性地蚀刻通过多孔层的牺牲氧化物区域以获得空腔。 该方法可以用于制造具有腔体的各种微器件,即MEMS器件,特别是其封装部件,以及半导体器件,特别是其BEOL部件。

    Photosensitive Sacrificial Polymer with Low Residue
    97.
    发明申请
    Photosensitive Sacrificial Polymer with Low Residue 有权
    低残留光敏牺牲聚合物

    公开(公告)号:US20130011784A1

    公开(公告)日:2013-01-10

    申请号:US13537556

    申请日:2012-06-29

    IPC分类号: G03F7/004 G03F7/20

    摘要: Embodiments according to the present invention relate generally to PAG bilayer and PAG-doped unilayer structures using sacrificial polymer layers that incorporate a photoacid generator having a concentration gradient therein. Said PAG concentration being higher in a upper portion of such structures than in a lower portion thereof. Embodiments according to the present invention also relate to a method of using such bilayers and unilayers to form microelectronic structures having a three-dimensional space, and methods of decomposition of the sacrificial polymer within the aforementioned layers.

    摘要翻译: 根据本发明的实施方案一般涉及使用掺入其中具有浓度梯度的光致酸发生器的牺牲聚合物层的PAG双层和PAG掺杂的单层结构。 所述PAG浓度在这种结构的上部比在其下部更高。 根据本发明的实施方案还涉及使用这种双层和单层以形成具有三维空间的微电子结构的方法,以及在上述层内分解牺牲聚合物的方法。

    Process for producing air gaps in microstructures
    98.
    发明授权
    Process for producing air gaps in microstructures 有权
    在微结构中产生气隙的方法

    公开(公告)号:US08231797B2

    公开(公告)日:2012-07-31

    申请号:US12353872

    申请日:2009-01-14

    摘要: A process for producing at least one air gap in a microstructure, which includes the supply of a microstructure comprising at least one gap filled with a sacrificial material, this gap being limited over at least part of its surface by an impermeable membrane but which may be rendered permeable by the action of a chemical etchant, this etchant also being capable of degrading the sacrificial material and the contacting of the microstructure with said chemical etchant in order to make the membrane permeable and degrade the sacrificial material, and the removal of the chemical etchant from the microstructure and in which the chemical etchant is a fluid containing hydrofluoric acid and/or ammonium fluoride. Applications include microelectronics and micro-technology.

    摘要翻译: 一种用于在微结构中产生至少一个空气间隙的方法,其包括提供包含填充有牺牲材料的至少一个间隙的微结构,该间隙在其表面的至少一部分上被不透水膜限制,但可以是 通过化学蚀刻剂的作用使其渗透,该蚀刻剂还能够降解牺牲材料和微结构与所述化学蚀刻剂的接触,以便使膜可渗透和降解牺牲材料,并除去化学蚀刻剂 来自微结构,其中化学蚀刻剂是含有氢氟酸和/或氟化铵的流体。 应用包括微电子和微电子技术。

    Eliminate release etch attack by interface modification in sacrificial layers
    99.
    发明授权
    Eliminate release etch attack by interface modification in sacrificial layers 失效
    通过牺牲层中的界面修改消除释放蚀刻攻击

    公开(公告)号:US08222066B2

    公开(公告)日:2012-07-17

    申请号:US12061592

    申请日:2008-04-02

    IPC分类号: H01L21/00

    CPC分类号: B81C1/00476 B81B2201/047

    摘要: Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.

    摘要翻译: 描述制造微机电系统(MEMS)装置的方法。 在一些实施例中,该方法包括在衬底上形成牺牲层,处理牺牲层的至少一部分以形成经处理的牺牲部分,在经处理的牺牲部分的至少一部分上形成覆盖层,并且至少部分地 去除经处理的牺牲部分以形成位于衬底和上覆层之间的空腔,上覆层暴露于空腔。