公开(公告)号：US20150091411A1

公开(公告)日：2015-04-02

申请号：US14562859

申请日：2014-12-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Greja Johanna Adriana Maria Verheijden ,  Roel Daamen ,  Gerhard Koops

IPC分类号： H02N1/00 ,  H01L21/768

CPC分类号： H02N1/00 ,  B81C1/00476 ,  H01L21/02 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/50 ,  H01L21/7688 ,  H01L29/84

摘要： A micro-device includes a substrate with a cavity. The cavity is covered with a porous layer that is permeable to vapor hydrofluoric acid (HF) etchant. The micro-device comprises a Microelectromechanical Systems (MEMS) device with a component that is moveable in operational use of the MEMS device. The component is arranged within the cavity.

摘要翻译： 微器件包括具有空腔的衬底。 空腔被可渗透蒸气氢氟酸（HF）蚀刻剂的多孔层覆盖。 微型器件包括具有可在MEMS器件的操作使用中移动的部件的微机电系统（MEMS）器件。 部件布置在腔内。

公开(公告)号：US08906729B2

公开(公告)日：2014-12-09

申请号：US13673494

申请日：2012-11-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd

发明人： Greja Johanna Adriana Maria Verheijden ,  Roel Daamen ,  Gerhard Koops

IPC分类号： B81C3/00 ,  H01L29/84 ,  H01L21/311 ,  H01L21/50 ,  H01L21/02 ,  B81C1/00

CPC分类号： H02N1/00 ,  B81C1/00476 ,  H01L21/02 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/50 ,  H01L21/7688 ,  H01L29/84

摘要： The invention relates to a micro-device with a cavity, the micro-device comprising a substrate, the method comprising steps of: A) providing the substrate, having a surface and comprising a sacrificial oxide region at the surface; B) covering the sacrificial oxide region with a porous layer being permeable to a vapor HF etchant, and C) selectively etching the sacrificial oxide region through the porous layer using the vapor HF etchant to obtain the cavity. This method may be used in the manufacture of various micro-devices with a cavity, i.e. MEMS devices, and in particular in the encapsulation part thereof, and semiconductor devices, and in particular the BEOL-part thereof.

摘要翻译： 本发明涉及具有空腔的微器件，微器件包括衬底，该方法包括以下步骤：A）提供具有表面并且在表面包括牺牲氧化物区域的衬底; B）覆盖牺牲氧化物区域，其中多孔层可透过蒸气HF蚀刻剂，以及C）使用蒸气HF蚀刻剂选择性地蚀刻通过多孔层的牺牲氧化物区域以获得空腔。 该方法可以用于制造具有腔体的各种微器件，即MEMS器件，特别是其封装部件，以及半导体器件，特别是其BEOL部件。

公开(公告)号：US20130069178A1

公开(公告)日：2013-03-21

申请号：US13673494

申请日：2012-11-09

申请人： Taiwan Semiconductor Manufacturing Company,

发明人： Greja Johanna Adriana Maria Verheijden ,  Roel Daamen ,  Gerhard Koops

IPC分类号： H01L29/84 ,  H01L21/50 ,  H01L21/02

CPC分类号： H02N1/00 ,  B81C1/00476 ,  H01L21/02 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/50 ,  H01L21/7688 ,  H01L29/84

摘要： The invention relates to a micro-device with a cavity, the micro-device comprising a substrate, the method comprising steps of: A) providing the substrate, having a surface and comprising a sacrificial oxide region at the surface; B) covering the sacrificial oxide region with a porous layer being permeable to a vapor HF etchant, and C) selectively etching the sacrificial oxide region through the porous layer using the vapor HF etchant to obtain the cavity. This method may be used in the manufacture of various micro-devices with a cavity, i.e. MEMS devices, and in particular in the encapsulation part thereof, and semiconductor devices, and in particular the BEOL-part thereof.

摘要翻译： 本发明涉及具有空腔的微器件，微器件包括衬底，该方法包括以下步骤：A）提供具有表面并且在表面包括牺牲氧化物区域的衬底; B）覆盖牺牲氧化物区域，其中多孔层可透过蒸气HF蚀刻剂，以及C）使用蒸气HF蚀刻剂选择性地蚀刻通过多孔层的牺牲氧化物区域以获得空腔。 该方法可以用于制造具有腔体的各种微器件，即MEMS器件，特别是其封装部件，以及半导体器件，特别是其BEOL部件。

公开(公告)号：US20180109203A1

公开(公告)日：2018-04-19

申请号：US15846727

申请日：2017-12-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Greja Johanna Adriana Maria Verheijden ,  Roel Daamen ,  Gerhard Koops

IPC分类号： H02N1/00 ,  H01L29/84 ,  H01L21/311 ,  H01L21/50 ,  H01L21/768 ,  H01L21/02 ,  B81C1/00

CPC分类号： H02N1/00 ,  B81C1/00476 ,  H01L21/02 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/50 ,  H01L21/7688 ,  H01L29/84

摘要： A method includes providing a substrate having a first sacrificial oxide region, the substrate comprising a first interconnect layer, the first interconnect layer comprising the first sacrificial oxide region. The method further includes covering the first sacrificial oxide region with a first porous layer being permeable to a vapor hydrofluoric acid (HF) etchant and selectively etching the first sacrificial oxide region through the first porous layer using the vapor HF etchant.

公开(公告)号：US09859818B2

公开(公告)日：2018-01-02

申请号：US14562859

申请日：2014-12-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Greja Johanna Adriana Maria Verheijden ,  Roel Daamen ,  Gerhard Koops

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H02N1/00 ,  H01L21/311 ,  H01L21/02 ,  B81C1/00 ,  H01L21/50 ,  H01L29/84 ,  H01L21/768

CPC分类号： H02N1/00 ,  B81C1/00476 ,  H01L21/02 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/50 ,  H01L21/7688 ,  H01L29/84

摘要： A micro-device includes a substrate with a cavity. The cavity is covered with a porous layer that is permeable to vapor hydrofluoric acid (HF) etchant. The micro-device comprises a Microelectromechanical Systems (MEMS) device with a component that is moveable in operational use of the MEMS device. The component is arranged within the cavity.

公开(公告)号：US10171007B2

公开(公告)日：2019-01-01

申请号：US15846727

申请日：2017-12-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Greja Johanna Adriana Maria Verheijden ,  Roel Daamen ,  Gerhard Koops

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/02 ,  H01L29/84 ,  H01L21/50 ,  B81C1/00 ,  H02N1/00 ,  H01L21/311

摘要： A method includes providing a substrate having a first sacrificial oxide region, the substrate comprising a first interconnect layer, the first interconnect layer comprising the first sacrificial oxide region. The method further includes covering the first sacrificial oxide region with a first porous layer being permeable to a vapor hydrofluoric acid (HF) etchant and selectively etching the first sacrificial oxide region through the first porous layer using the vapor HF etchant.