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公开(公告)号：US09941367B2
公开(公告)日：2018-04-10
申请号：US15226557
申请日：2016-08-02
发明人： Sung-Li Wang , Neng-Kuo Chen , Ding-Kang Shih , Meng-Chun Chang , Yi-An Lin , Gin-Chen Huang , Chen-Feng Hsu , Hau-Yu Lin , Chih-Hsin Ko , Sey-Ping Sun , Clement Hsingjen Wann
IPC分类号： H01L29/00 , H01L29/417 , H01L21/8234 , H01L29/78 , H01L29/66 , H01L27/088 , H01L29/06 , H01L29/423 , H01L29/51
CPC分类号： H01L21/823431 , H01L21/823418 , H01L21/823468 , H01L21/823475 , H01L21/823481 , H01L21/823814 , H01L27/0886 , H01L29/0649 , H01L29/0653 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/41783 , H01L29/41791 , H01L29/42364 , H01L29/518 , H01L29/665 , H01L29/6653 , H01L29/66545 , H01L29/6656 , H01L29/66636 , H01L29/66795 , H01L29/7842 , H01L29/7848 , H01L29/785 , H01L29/7851 , H01L29/7853 , H01L29/7854 , H01L2029/7858
摘要： A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
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公开(公告)号：US20170140942A1
公开(公告)日：2017-05-18
申请号：US15419943
申请日：2017-01-30
发明人： Chun Hsiung Tsai , Chi-Yuan Shih , Gin-Chen Huang , Clement Hsingjen Wann , Li-Chi Yu , Chin-Hsiang Lin , Ling-Yen Yeh , Meng-Chun Chang , Neng-Kuo Chen , Sey-Ping Sun , Ta-Chun Ma , Yen-Chun Huang
IPC分类号： H01L21/285 , H01L27/088 , H01L29/161 , H01L29/66 , H01L29/78 , H01L29/06 , H01L29/45 , H01L29/417
CPC分类号： H01L21/28518 , H01L27/0886 , H01L29/0649 , H01L29/161 , H01L29/41791 , H01L29/45 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要： A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.
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公开(公告)号：US20150041918A1
公开(公告)日：2015-02-12
申请号：US13963887
申请日：2013-08-09
发明人： Clement Hsingjen Wann , Sey-Ping Sun , Ling-Yen Yeh , Chi-Yuan Shih , Li-Chi Yu , Chun Hsiung Tsai , Chin-Hsiang Lin , Neng-Kuo Chen , Meng-Chun Chang , Ta-Chun Ma , Gin-Chen Huang , Yen-Chun Huang
CPC分类号： H01L21/28518 , H01L27/0886 , H01L29/0649 , H01L29/161 , H01L29/41791 , H01L29/45 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要： A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly. The method further includes forming a first metal silicide layer contacting the upward facing facet, and forming a second metal silicide layer contacting the downward facing facet. The first metal silicide layer and the second metal silicide layer comprise different metals.
摘要翻译： 一种方法包括在晶片的主表面上生长外延半导体区域。 外延半导体区域具有朝上的面向上的朝向小面和朝下的向下的小面。 该方法还包括形成与向上朝向的小面接触的第一金属硅化物层，以及形成接触向下的小面的第二金属硅化物层。 第一金属硅化物层和第二金属硅化物层包括不同的金属。
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公开(公告)号：US10269649B2
公开(公告)日：2019-04-23
申请号：US15938225
申请日：2018-03-28
发明人： Sung-Li Wang , Neng-Kuo Chen , Ding-Kang Shih , Meng-Chun Chang , Yi-An Lin , Gin-Chen Huang , Chen-Feng Hsu , Hau-Yu Lin , Chih-Hsin Ko , Sey-Ping Sun , Clement Hsingjen Wann
IPC分类号： H01L29/00 , H01L21/8234 , H01L29/78 , H01L29/66 , H01L21/8238 , H01L29/165 , H01L29/161 , H01L29/16 , H01L29/06 , H01L29/417 , H01L27/088 , H01L29/423 , H01L29/51
摘要： A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
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公开(公告)号：US10115597B2
公开(公告)日：2018-10-30
申请号：US15419943
申请日：2017-01-30
发明人： Chun Hsiung Tsai , Chi-Yuan Shih , Gin-Chen Huang , Clement Hsingjen Wann , Li-Chi Yu , Chin-Hsiang Lin , Ling-Yen Yeh , Meng-Chun Chang , Neng-Kuo Chen , Sey-Ping Sun , Ta-Chun Ma , Yen-Chun Huang
IPC分类号： H01L21/336 , H01L21/285 , H01L29/78 , H01L29/66 , H01L27/088 , H01L29/161 , H01L29/417 , H01L29/45 , H01L29/06
摘要： A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.
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公开(公告)号：US09559182B2
公开(公告)日：2017-01-31
申请号：US14968652
申请日：2015-12-14
发明人： Clement Hsingjen Wann , Sey-Ping Sun , Ling-Yen Yeh , Chi-Yuan Shih , Li-Chi Yu , Chun Hsiung Tsai , Chin-Hsiang Lin , Neng-Kuo Chen , Meng-Chun Chang , Ta-Chun Ma , Gin-Chen Huang , Yen-Chun Huang
IPC分类号： H01L29/66 , H01L29/78 , H01L29/45 , H01L27/088 , H01L29/161 , H01L29/417
CPC分类号： H01L21/28518 , H01L27/0886 , H01L29/0649 , H01L29/161 , H01L29/41791 , H01L29/45 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要： A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.
摘要翻译： 提供具有外延区域和双金属 - 半导体合金表面的器件。 外延区域包括面向上的小面和面向下的小面。 面向上的小面具有第一金属 - 半导体合金表面，并且朝下小面具有第二金属 - 半导体合金表面，其中第一金属 - 半导体合金不同于第二金属 - 半导体合金。
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公开(公告)号：US20160343815A1
公开(公告)日：2016-11-24
申请号：US15226557
申请日：2016-08-02
发明人： Sung-Li Wang , Neng-Kuo Chen , Ding-Kang Shih , Meng-Chun Chang , Yi-An Lin , Gin-Chen Huang , Chen-Feng Hsu , Hau-Yu Lin , Chih-Hsin Ko , Sey-Ping Sun , Clement Hsingjen Wann
IPC分类号： H01L29/417 , H01L29/78 , H01L27/088 , H01L29/66 , H01L21/8234
CPC分类号： H01L21/823431 , H01L21/823418 , H01L21/823468 , H01L21/823475 , H01L21/823481 , H01L21/823814 , H01L27/0886 , H01L29/0649 , H01L29/0653 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/41783 , H01L29/41791 , H01L29/42364 , H01L29/518 , H01L29/665 , H01L29/6653 , H01L29/66545 , H01L29/6656 , H01L29/66636 , H01L29/66795 , H01L29/7842 , H01L29/7848 , H01L29/785 , H01L29/7851 , H01L29/7853 , H01L29/7854 , H01L2029/7858
摘要： A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
摘要翻译： 翅片结构在基底上。 翅片结构包括具有上表面和下表面的外延区域。 外延区域上的接触结构包括上接触部分和下接触部分。 上接触部分包括在上表面上的金属层和在金属层上的阻挡层。 下接触部分包括沿着底面的金属 - 绝缘体 - 半导体（MIS）接触。 MIS触点包括下表面上的电介质层和电介质层上的阻挡层。
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公开(公告)号：US20180219077A1
公开(公告)日：2018-08-02
申请号：US15938225
申请日：2018-03-28
发明人： Sung-Li Wang , Neng-Kuo Chen , Ding-Kang Shih , Meng-Chun Chang , Yi-An Lin , Gin-Chen Huang , Chen-Feng Hsu , Hau-Yu Lin , Chih-Hsin Ko , Sey-Ping Sun , Clement Hsingjen Wann
IPC分类号： H01L29/417 , H01L21/8234 , H01L27/088 , H01L29/06 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/78
CPC分类号： H01L21/823431 , H01L21/823418 , H01L21/823468 , H01L21/823475 , H01L21/823481 , H01L21/823814 , H01L27/0886 , H01L29/0649 , H01L29/0653 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/41783 , H01L29/41791 , H01L29/42364 , H01L29/518 , H01L29/665 , H01L29/6653 , H01L29/66545 , H01L29/6656 , H01L29/66636 , H01L29/66795 , H01L29/7842 , H01L29/7848 , H01L29/785 , H01L29/7851 , H01L29/7853 , H01L29/7854 , H01L2029/7858
摘要： A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
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公开(公告)号：US09379108B2
公开(公告)日：2016-06-28
申请号：US14701240
申请日：2015-04-30
发明人： Clement Hsingjen Wann , Ling-Yen Yeh , Chi-Wen Liu , Chi-Yuan Shih , Li-Chi Yu , Meng-Chun Chang , Ting-Chu Ko , Chung-Hsien Chen
IPC分类号： H01L21/469 , H01L27/088 , H01L21/8234 , H01L21/02 , H01L29/78 , H01L21/324 , H01L21/762 , H01L21/285 , H01L29/45 , H01L29/06 , H01L29/49 , H01L21/28
CPC分类号： H01L27/0886 , H01L21/02057 , H01L21/02532 , H01L21/0262 , H01L21/2807 , H01L21/28512 , H01L21/324 , H01L21/76224 , H01L21/768 , H01L21/76843 , H01L21/76855 , H01L21/823431 , H01L21/823475 , H01L21/823481 , H01L23/48 , H01L29/0653 , H01L29/45 , H01L29/495 , H01L29/66795 , H01L29/7848 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device comprises forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin. The method further comprises forming germanide over a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate.
摘要翻译： 制造半导体器件的方法包括形成从衬底延伸的翅片结构，所述翅片结构包括在所述第一翅片和所述第二翅片之间的第一翅片，第二翅片和第三翅片。 该方法还包括在第一鳍片的第一面上形成锗化物，在第二鳍片的第二小面上形成锗化物，以及在第三鳍片的基本上平坦的表面上形成锗化物，其中第一小面与衬底的主表面形成第一锐角， 与第二小面基本上是镜像对称的，并且其中第三鳍片的基本上平坦的表面形成小于与衬底主表面的第一锐角的第二锐角。
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公开(公告)号：US20160099331A1
公开(公告)日：2016-04-07
申请号：US14968652
申请日：2015-12-14
发明人： Clement Hsingjen Wann , Sey-Ping Sun , Ling-Yen Yeh , Chi-Yuan Shih , Li-Chi Yu , Chun Hsiung Tsai , Chin-Hsiang Lin , Neng-Kuo Chen , Meng-Chun Chang , Ta-Chun Ma , Gin-Chen Huang , Yen-Chun Huang
IPC分类号： H01L29/45 , H01L29/161 , H01L29/417 , H01L27/088
CPC分类号： H01L21/28518 , H01L27/0886 , H01L29/0649 , H01L29/161 , H01L29/41791 , H01L29/45 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要： A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.
摘要翻译： 提供具有外延区域和双金属 - 半导体合金表面的器件。 外延区域包括面向上的小面和面向下的小面。 面向上的小面具有第一金属 - 半导体合金表面，并且朝下小面具有第二金属 - 半导体合金表面，其中第一金属 - 半导体合金不同于第二金属 - 半导体合金。
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