发明申请
- 专利标题： Self-Aligned Dual-Metal Silicide and Germanide Formation
- 专利标题（中）： 自对准双金属硅化物和德国化物形成
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申请号： US14968652申请日： 2015-12-14
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公开(公告)号： US20160099331A1公开(公告)日： 2016-04-07
- 发明人: Clement Hsingjen Wann , Sey-Ping Sun , Ling-Yen Yeh , Chi-Yuan Shih , Li-Chi Yu , Chun Hsiung Tsai , Chin-Hsiang Lin , Neng-Kuo Chen , Meng-Chun Chang , Ta-Chun Ma , Gin-Chen Huang , Yen-Chun Huang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L29/161 ; H01L29/417 ; H01L27/088
摘要：
A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.
公开/授权文献
- US09559182B2 Self-aligned dual-metal silicide and germanide formation 公开/授权日：2017-01-31
信息查询
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