-
公开(公告)号:US12222653B2
公开(公告)日:2025-02-11
申请号:US17320754
申请日:2021-05-14
Inventor: Ming-Hui Weng , An-Ren Zi , Ching-Yu Chang , Chin-Hsiang Lin , Chen-Yu Liu
IPC: G03F7/30 , G03F7/32 , G03F7/40 , H01L21/02 , H01L21/033 , H01L21/311 , H01L21/3115
Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer, the resist layer includes an inorganic material. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes forming a modified layer over the resist layer, and the modified layer includes an auxiliary. The method includes performing an exposure process on the modified layer and the resist layer, and removing a portion of the modified layer and a first portion of the resist layer by a first developer. The first developer includes a ketone-based solvent having a substituted or unsubstituted C6-C7 cyclic ketone, an ester-based solvent having a formula (b), or a combination thereof.
-
公开(公告)号:US12135502B2
公开(公告)日:2024-11-05
申请号:US18231444
申请日:2023-08-08
Inventor: Siao-Shan Wang , Ching-Yu Chang , Chin-Hsiang Lin
IPC: G03F7/038 , C08L25/08 , C08L33/10 , C08L33/16 , G03F7/004 , G03F7/027 , G03F7/16 , G03F7/20 , G03F7/40
Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.
-
公开(公告)号:US12050399B2
公开(公告)日:2024-07-30
申请号:US17318315
申请日:2021-05-12
Inventor: Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Li-Jui Chen , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC: G03F1/64 , H01L21/033
CPC classification number: G03F1/64 , H01L21/0337
Abstract: A method for preparing a pellicle assembly includes reducing the thickness of one or more initial membrane(s) to obtain a pellicle membrane. The pellicle membrane is then affixed to a mounting frame to obtain the pellicle assembly. Compressive pressure can be applied to reduce the thickness of the initial membrane(s). Alternatively, the thickness can be reduced by stretching the initial membrane(s) to obtain an extended membrane. A mounting frame is then affixed to a portion of the extended membrane. The mounting frame and the portion of the extended membrane are then separated from the remainder of the extended membrane to obtain the pellicle assembly. The resulting pellicle assemblies include a pellicle membrane that is attached to a mounting frame. The pellicle membrane can be formed from nanotubes and has a combination of high transmittance, low deflection, and small pore size.
-
公开(公告)号:US11971657B2
公开(公告)日:2024-04-30
申请号:US17717984
申请日:2022-04-11
Inventor: An-Ren Zi , Chin-Hsiang Lin , Ching-Yu Chang , Yahru Cheng
IPC: G03F7/038 , G03F7/004 , G03F7/32 , H01L21/027 , H01L21/47
CPC classification number: G03F7/0048 , G03F7/038 , G03F7/0382 , G03F7/32 , G03F7/322 , G03F7/325 , H01L21/0273 , H01L21/47
Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15 pKa>9.5; and a chelate.
-
公开(公告)号:US11764068B2
公开(公告)日:2023-09-19
申请号:US17751361
申请日:2022-05-23
Inventor: Ru-Gun Liu , Chih-Ming Lai , Wei-Liang Lin , Yung-Sung Yen , Ken-Hsien Hsieh , Chin-Hsiang Lin
IPC: H01L21/027 , C23C16/44 , H01L21/311 , H01L21/768
CPC classification number: H01L21/31116 , H01L21/0274 , H01L21/31144 , H01L21/76816 , H01L21/76877
Abstract: In a method of manufacturing a semiconductor device, a trench pattern is formed in a first layer disposed over an underlying layer, and a first dimension of the trench pattern is reduced by first directional deposition. In the first directional deposition, a deposition rate on a first side wall of the trench pattern extending in a first axis is greater than a deposition rate on a second side wall of the trench pattern extending in a second axis crossing the first axis, the first axis and the second axis being horizontal and parallel to a surface of the underlying layer.
-
公开(公告)号:US20230245900A1
公开(公告)日:2023-08-03
申请号:US18132868
申请日:2023-04-10
Inventor: Yen-Hao Chen , Wei-Han Lai , Ching-Yu Chang , Chin-Hsiang Lin
IPC: H01L21/321 , H01L21/02 , H01L21/027 , H01L21/3105
CPC classification number: H01L21/32115 , H01L21/02406 , H01L21/02557 , H01L21/0276 , H01L21/02118 , H01L21/31058
Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.
-
公开(公告)号:US20220365421A1
公开(公告)日:2022-11-17
申请号:US17318315
申请日:2021-05-12
Inventor: Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Li-Jui Chen , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC: G03F1/64 , H01L21/033
Abstract: A method for preparing a pellicle assembly includes reducing the thickness of one or more initial membrane(s) to obtain a pellicle membrane. The pellicle membrane is then affixed to a mounting frame to obtain the pellicle assembly. Compressive pressure can be applied to reduce the thickness of the initial membrane(s). Alternatively, the thickness can be reduced by stretching the initial membrane(s) to obtain an extended membrane. A mounting frame is then affixed to a portion of the extended membrane. The mounting frame and the portion of the extended membrane are then separated from the remainder of the extended membrane to obtain the pellicle assembly. The resulting pellicle assemblies include a pellicle membrane that is attached to a mounting frame. The pellicle membrane can be formed from nanotubes and has a combination of high transmittance, low deflection, and small pore size.
-
公开(公告)号:US20220365420A1
公开(公告)日:2022-11-17
申请号:US17318487
申请日:2021-05-12
Inventor: Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC: G03F1/62
Abstract: A pellicle assembly includes a pellicle membrane and a conformal coating on an outer surface of the pellicle membrane. The pellicle membrane can be formed with multiple layers and has a combination of high transmittance, low deflection, and small pore size. The conformal coating is intended to protect the pellicle membrane from damage that can occur due to heat and hydrogen plasma created during EUV exposure.
-
公开(公告)号:US11153957B2
公开(公告)日:2021-10-19
申请号:US16505156
申请日:2019-07-08
Inventor: Tzu Jeng Hsu , Chi-Ming Yang , Chyi Shyuan Chern , Jui-Chun Peng , Heng-Hsin Liu , Chin-Hsiang Lin
IPC: H05G2/00
Abstract: An electromagnetic radiation generation apparatus includes a collector, a gas supplier and a gas pipeline. The collector has a reflection surface configured to reflect an electromagnetic radiation. The collector includes a bottom portion, a perimeter portion, and a middle portion between the bottom portion and the perimeter portion. The middle portion of the collector includes a plurality of openings. The gas supplier is configured to provide a buffer gas. The gas pipeline is in communication with the gas supplier and the collector, and configured to purge the buffer gas through the openings of the middle portion to form a gas protection layer near the reflection surface of the collector. The openings of the middle portion include a plurality of holes arranged in an array including a plurality of rows of holes, or a plurality of concentric gaps.
-
公开(公告)号:US10714620B2
公开(公告)日:2020-07-14
申请号:US16229118
申请日:2018-12-21
Inventor: Chin-Hsiang Lin , Tai-Chun Huang , Tien-I Bao
IPC: H01L21/8234 , H01L29/78 , H01L29/417 , H01L21/768 , H01L21/02 , H01L21/033 , H01L23/528 , H01L29/66 , H01L21/8238
Abstract: An embodiment is a method including recessing a gate electrode over a semiconductor fin on a substrate to form a first recess from a top surface of a dielectric layer, forming a first mask in the first recess over the recessed gate electrode, recessing a first conductive contact over a source/drain region of the semiconductor fin to form a second recess from the top surface of the dielectric layer, and forming a second mask in the second recess over the recessed first conductive contact.