发明申请
- 专利标题： Wrap-Around Contact on FinFET
- 专利标题（中）： FinFET封装接触
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申请号： US15226557申请日： 2016-08-02
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公开(公告)号： US20160343815A1公开(公告)日： 2016-11-24
- 发明人: Sung-Li Wang , Neng-Kuo Chen , Ding-Kang Shih , Meng-Chun Chang , Yi-An Lin , Gin-Chen Huang , Chen-Feng Hsu , Hau-Yu Lin , Chih-Hsin Ko , Sey-Ping Sun , Clement Hsingjen Wann
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L29/78 ; H01L27/088 ; H01L29/66 ; H01L21/8234
摘要：
A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
公开/授权文献
- US09941367B2 Wrap-around contact on FinFET 公开/授权日：2018-04-10
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